Identification of the Microscopic Structure of New Hot Carrier Damage Centers in Short Channel Mosfets

MRS Proceedings ◽

10.1557/proc-473-181 ◽

1997 ◽

Vol 473 ◽

Cited By ~ 1

Author(s):

C. A. Billman ◽

P. M. Lenahan ◽

W. Weber

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Microscopic Structure ◽

Short Channel ◽

Hot Carrier ◽

Metal Oxide Silicon ◽

First Time

ABSTRACTWe show, for the first time, that E'like centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomenon.

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Concise Short-Channel Effect Model for Inversion-type Ultrathin Silicon-on-Insulator p-Channel Metal-Oxide-Silicon Field-Effect Transistors Based on Partitioning of Thin-Film

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.6340 ◽

1995 ◽

Vol 34 (Part 1, No. 12A) ◽

pp. 6340-6345

Author(s):

Shiao-Shien Chen ◽

James B. Kuo

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon On Insulator ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

Effect Model ◽

Metal Oxide Silicon

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Modeling of subthreshold characteristics of short channel junctionless cylindrical surrounding-gate nanowire metal–oxide–silicon field effect transistors

Physica Scripta ◽

10.1088/0031-8949/89/01/015804 ◽

2013 ◽

Vol 89 (1) ◽

pp. 015804 ◽

Cited By ~ 9

Author(s):

Xiaoshi Jin ◽

Xi Liu ◽

Jung-Hee Lee ◽

Jong-Ho Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Surrounding Gate ◽

Metal Oxide Silicon

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

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Simple Model for Gate-Voltage Dependent Parasitic Resistancein Short Channel Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l535 ◽

1991 ◽

Vol 30 (Part 2, No. 4A) ◽

pp. L535-L537 ◽

Cited By ~ 2

Author(s):

Jung-Il Lee ◽

Myung-Bok Lee ◽

Sang Young Lee ◽

Kwang Nham Kang ◽

Kyung Sik Yoon

Keyword(s):

Simple Model ◽

Metal Oxide ◽

Gate Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Voltage Dependent ◽

Lightly Doped Drain

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Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.77 ◽

2014 ◽

pp. 77-101

Author(s):

S. Ghosh

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted

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Suppression of Parasitic Bipolar Action and Improvement of Hot-Carrier Reliability in Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted Oxygen) Introducing Recombination Centers near Source Junction

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.6175 ◽

1997 ◽

Vol 36 (Part 1, No. 10) ◽

pp. 6175-6180 ◽

Cited By ~ 4

Author(s):

Toshiaki Tsuchiya ◽

Terukazu Ohno ◽

Satoshi Tazawa ◽

Masaaki Tomizawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Hot Carrier ◽

Recombination Centers

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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Cited By ~ 5

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

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A Simple Model for Substrate Current Characteristics in Short-Channel Ultrathin-Film Metal-Oxide-Semiconductor Field-Effect Transistors by Separation by Implanted Oxygen

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.4722 ◽

1995 ◽

Vol 34 (Part 1, No. 9A) ◽

pp. 4722-4727 ◽

Cited By ~ 6

Author(s):

Yasuhisa Omura

Keyword(s):

Simple Model ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ultrathin Film ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Substrate Current ◽

Current Characteristics

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The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc09 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC09 ◽

Cited By ~ 2

Author(s):

Ming Hu ◽

Takuya Yamane ◽

Toshiaki Tsuchiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Process ◽

Interface Traps ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

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On resolving hot carrier induced degradation mechanisms in silicon‐on‐sapphire metal‐oxide‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.110646 ◽

1993 ◽

Vol 63 (14) ◽

pp. 1912-1914 ◽

Cited By ~ 1

Author(s):

E. Y. Chao ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Mechanisms ◽

Hot Carrier

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