Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing

L. Trabzon; O. O. Awadelkarim; J. Werking

doi:10.1116/1.590896

Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590896 ◽

1999 ◽

Vol 17 (5) ◽

pp. 2216 ◽

Cited By ~ 1

Author(s):

L. Trabzon ◽

O. O. Awadelkarim ◽

J. Werking

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interlayer Dielectric ◽

Metal Oxide Silicon

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Effect of the bulk charge on the thermal noise in metal-oxide-silicon field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1965.15594 ◽

1965 ◽

Vol 12 (9) ◽

pp. 509-509

Author(s):

C.T. Sah ◽

F.H. Hielscher ◽

S.Y. Wu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Thermal Noise ◽

Field Effect Transistors ◽

Bulk Charge ◽

Metal Oxide Silicon

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THE FABRICATION AND CHARACTERIZATION OF METAL-OXIDE-SILICON CAPACITORS AND FIELD-EFFECT TRANSISTORS USING Dy2O3 AND Sm2O3 GATE DIELECTRICS

Integrated Ferroelectrics ◽

10.1080/10584580802088892 ◽

2008 ◽

Vol 97 (1) ◽

pp. 111-120 ◽

Cited By ~ 4

Author(s):

Yu-Ren Hwang ◽

Ingram Yin-ku Chang ◽

Ming-tsong Wang ◽

Joseph Ya-min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Fabrication And Characterization ◽

Metal Oxide Silicon

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Trap evaluations of metal/oxide/silicon field-effect transistors with high-k gate dielectric using charge pumping method

Applied Physics Letters ◽

10.1063/1.1506776 ◽

2002 ◽

Vol 81 (11) ◽

pp. 2050-2052 ◽

Cited By ~ 21

Author(s):

Ga-Won Lee ◽

Jae-Hee Lee ◽

Hae-Wang Lee ◽

Myoung-Kyu Park ◽

Dae-Gwan Kang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Charge Pumping ◽

High K ◽

Metal Oxide Silicon ◽

High K Gate Dielectric

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Identification of the atomic-scale defects involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2844348 ◽

2008 ◽

Vol 103 (4) ◽

pp. 044505 ◽

Cited By ~ 31

Author(s):

J. P. Campbell ◽

P. M. Lenahan ◽

A. T. Krishnan ◽

S. Krishnan

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Scale ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Metal Oxide Silicon

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Damage to sub-half-micron metal-oxide-silicon field-effect transistors from plasma processing of low- k polymer interlayer dielectrics

Semiconductor Science and Technology ◽

10.1088/0268-1242/15/4/301 ◽

2000 ◽

Vol 15 (4) ◽

pp. 309-314 ◽

Cited By ~ 3

Author(s):

L Trabzon ◽

O O Awadelkarim

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Plasma Processing ◽

Interlayer Dielectrics ◽

Metal Oxide Silicon ◽

Low K

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Low Contact Resistivity with Low Silicide/p+-Silicon Schottky Barrier for High-Performance p-Channel Metal–Oxide–Silicon Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04da03 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DA03 ◽

Cited By ~ 7

Author(s):

Hiroaki Tanaka ◽

Tatsunori Isogai ◽

Tetsuya Goto ◽

Akinobu Teramoto ◽

Shigetoshi Sugawa ◽

...

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Contact Resistivity ◽

Metal Oxide Silicon

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Complementary metal‐oxide‐silicon field‐effect transistors fabricated in 4‐MeV boron‐implanted silicon

Applied Physics Letters ◽

10.1063/1.95470 ◽

1984 ◽

Vol 45 (9) ◽

pp. 977-979 ◽

Cited By ~ 12

Author(s):

K. W. Terrill ◽

P. F. Byrne ◽

C. Hu ◽

N. W. Cheung

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Silicon

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Impact of NF3-Added Interlayer Dielectric High Density Plasma Process on Hump Effect in Submicron n-type Metal Oxide Silicon Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.4998 ◽

2003 ◽

Vol 42 (Part 1, No. 8) ◽

pp. 4998-5001

Author(s):

Joo-Seog Park ◽

Il-Gweon Kim ◽

Yeong-Seuk Kim

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

High Density ◽

Plasma Process ◽

Interlayer Dielectric ◽

Effect Transistor ◽

Metal Oxide Silicon ◽

Density Plasma

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Low-Frequency Noise Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Compressive Interlayer-Dielectric-SiNxStressing Layer

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c042 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C042 ◽

Cited By ~ 1

Author(s):

Yu-Ting Chen ◽

Kun-Ming Chen ◽

Wen-Shiang Liao ◽

Guo-Wei Huang ◽

Fon-Shan Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Interlayer Dielectric ◽

Noise Characteristics

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Concise Short-Channel Effect Model for Inversion-type Ultrathin Silicon-on-Insulator p-Channel Metal-Oxide-Silicon Field-Effect Transistors Based on Partitioning of Thin-Film

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.6340 ◽

1995 ◽

Vol 34 (Part 1, No. 12A) ◽

pp. 6340-6345

Author(s):

Shiao-Shien Chen ◽

James B. Kuo

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon On Insulator ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

Effect Model ◽

Metal Oxide Silicon

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