Patterned photonucleation of chemical vapor deposition of Al by UV‐laser photodeposition

1984 ◽  
Vol 45 (6) ◽  
pp. 617-619 ◽  
Author(s):  
J. Y. Tsao ◽  
D. J. Ehrlich
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Uv Laser

UV Laser Photolysis of Disiloxanes for Chemical Vapor Deposition of Nano-Textured Silicones

2002 ◽  
Vol 14 (1) ◽  
pp. 144-153 ◽  
Author(s):  
Josef Pola ◽  
Anna Galíková ◽  
Aftanas Galík ◽  
Vratislav Blechta ◽  
Zdeněk Bastl ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Laser Photolysis ◽  
Uv Laser

Preparation and growth mechanism ofa-axis-oriented YBa2Cu3O7-δ films by laser metal-organic chemical vapor deposition

1994 ◽  
Vol 9 (5) ◽  
pp. 1067-1081 ◽  
Author(s):  
Takahisa Ushida ◽  
Hiroyuki Higa ◽  
Kazutoshi Higashiyama ◽  
Izumi Hirabayashi
Keyword(s):  
Chemical Vapor Deposition ◽  
Laser Irradiation ◽  
Vapor Deposition ◽  
Film Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Uv Laser ◽  
Axis Orientation ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Recently we have found a very effective method for controlling the orientation of YBCO films by metal-organic chemical vapor deposition (MOCVD) using uv laser irradiation during deposition onto a MgO(100) substrate. The irradiated part was stronglya-axis-oriented normal to the surface of the substrate for films prepared at 650-700 °C, whereas the unirradiated parts showedc-axis or (110) orientation. This phenomenon occurs not only on MgO(100) substrates but also on other substrates. We obtained aTcabove 81 K on thea-axis oriented part. The critical current density was over 105A/cm2at 4.2 K and O T. The surface morphology depends on the laser power density and the repetition rate. A high degree of thea-axis orientation is obtained only by using uv light during deposition of YBCO film. IR or a visible laser causes only surface melting and the destruction of film orientation. We propose that the nuclei fora-axis orientation are formed by the aggregation of Ba caused by uv laser irradiation near the film surface.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Coating of continuous carbon fibers with double layers by chemical vapor deposition

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Double Layers
Sign in / Sign up

Export Citation Format

Share Document