Method for determining emitter recombination in Si solar cells using open‐circuit voltage decay

1984 ◽  
Vol 45 (3) ◽  
pp. 247-249 ◽  
Author(s):  
B. H. Rose ◽  
H. T. Weaver
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Si Solar Cells ◽  
Voltage Decay

scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1931
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Voltage Decay ◽  
Sensitized Solar Cells ◽  
Η Value

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

Simulation of InAIN/Si Single-Heterojunction Solar Cells Using wxAMPS

2014 ◽  
Vol 665 ◽  
pp. 111-114 ◽  
Author(s):  
Ying Huang ◽  
Xiao Ming Shen ◽  
Xiao Feng Wei
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Indium Content ◽  
Open Circuit ◽  
Heterojunction Solar Cells ◽  
Si Solar Cells

In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high efficiency InAlN/Si solar cells in experiment.

Control of morphology and defect density in zinc oxide for improved dye-sensitized solar cells

2016 ◽  
Vol 18 (44) ◽  
pp. 30475-30483 ◽  
Author(s):  
Seul Ah Kim ◽  
Muhammad Awais Abbas ◽  
Lanlee Lee ◽  
Byungwuk Kang ◽  
Hahkjoon Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Electrochemical Impedance ◽  
Defect Density ◽  
Dye Sensitized Solar Cells ◽  
Surface Characteristics ◽  
Open Circuit ◽  
Dye Sensitized ◽  
Voltage Decay ◽  
Sensitized Solar Cells

The surface characteristics of the ZnO photoelectrode in dye-sensitized solar cells are elucidated by in-depth electrochemical analyses including open-circuit voltage decay measurements and electrochemical impedance spectroscopy.

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