scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1931
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Voltage Decay ◽  
Sensitized Solar Cells ◽  
Η Value

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

2018 ◽  
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Electrochemical Impedance ◽  
Photovoltaic Performance ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Electrolyte Interface ◽  
Sensitized Solar Cells

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to enhance the photovoltaic performance of quantum dot sensitized solar cells (QDSSCs). In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is significantly higher than the 2.15% and 3.23% observed for QDSSCs with a TiO2/CuInS2 device and TiO2/CuInS2/ZnS, respectively. Electrochemical impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the photoanode/electrolyte interface and prolongs the electron lifetime.

High performance of TiO2/CdS quantum dot sensitized solar cells with a Cu–ZnS passivation layer

2017 ◽  
Vol 41 (5) ◽  
pp. 1914-1917 ◽  
Author(s):  
Young-Seok Lee ◽  
Chandu V. V. M. Gopi ◽  
Araveeti Eswar Reddy ◽  
Chandu Nagaraju ◽  
Hee-Je Kim
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Light Harvesting ◽  
Charge Recombination ◽  
Passivation Layer ◽  
Cds Quantum Dot ◽  
Sensitized Solar Cells

A Cu–ZnS passivation layer effectively suppresses the charge recombination and increases the light harvesting in QDSSCs.

High performance and reduced charge recombination of CdSe/CdS quantum dot-sensitized solar cells

2012 ◽  
Vol 22 (24) ◽  
pp. 12058 ◽  
Author(s):  
Xiao-Yun Yu ◽  
Bing-Xin Lei ◽  
Dai-Bin Kuang ◽  
Cheng-Yong Su
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Charge Recombination ◽  
Cds Quantum Dot ◽  
Sensitized Solar Cells

Control of morphology and defect density in zinc oxide for improved dye-sensitized solar cells

2016 ◽  
Vol 18 (44) ◽  
pp. 30475-30483 ◽  
Author(s):  
Seul Ah Kim ◽  
Muhammad Awais Abbas ◽  
Lanlee Lee ◽  
Byungwuk Kang ◽  
Hahkjoon Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Electrochemical Impedance ◽  
Defect Density ◽  
Dye Sensitized Solar Cells ◽  
Surface Characteristics ◽  
Open Circuit ◽  
Dye Sensitized ◽  
Voltage Decay ◽  
Sensitized Solar Cells

The surface characteristics of the ZnO photoelectrode in dye-sensitized solar cells are elucidated by in-depth electrochemical analyses including open-circuit voltage decay measurements and electrochemical impedance spectroscopy.

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