Effect of Material Inhomogeneity on the Open-Circuit Voltage of String Ribbon Si Solar Cells

2005 ◽  
Vol 52 (10) ◽  
pp. 2243-2249 ◽  
Author(s):  
K. Nakayashiki ◽  
V. Meemongkolkiat ◽  
A. Rohatgi
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Material Inhomogeneity ◽  
Si Solar Cells

Simulation of InAIN/Si Single-Heterojunction Solar Cells Using wxAMPS

2014 ◽  
Vol 665 ◽  
pp. 111-114 ◽  
Author(s):  
Ying Huang ◽  
Xiao Ming Shen ◽  
Xiao Feng Wei
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Indium Content ◽  
Open Circuit ◽  
Heterojunction Solar Cells ◽  
Si Solar Cells

In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high efficiency InAlN/Si solar cells in experiment.

The Effects of Dopant Profiles on the Device Parapmetrs of p-i-n and n-i-p a-Si Solar Cells

1986 ◽  
Vol 70 ◽  
Author(s):  
F. R. Jeffrey ◽  
G. D. Vernstrom ◽  
M. Weber ◽  
K. A. Epstein
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Spectral Response ◽  
Surface Recombination ◽  
Open Circuit ◽  
Response Data ◽  
Si Solar Cells ◽  
Recombination Current ◽  
Dopant Profiles

ABSTRACTwe have studied the effects of intrinsic layer dopant profiles on the open circuit voltage and fill factor of p-i-n and n-i-p solar cells. Data is presented showing that boron profiling into the i-layer is responsible for the commonly observed difference in open circuit voltage between p-i-n and n-i-p devices. As only a shallow profile is required to produce this effect, it is proposed that the lower Voc samples are being limited by surface recombination at the p/i interface and that the boron profile reduces this recombination current. The fill factor for devices illuminated through the n+ layer is shown to be very sensitive to the depth of a boron profile, yet not so sensitive to the profile concentration. A maximum occurs for a profile penetrating slightly more than half way through the cell. Spectral response data clearly shows a shifting of high collection from the back to the front of the cell.

Comparison of Prolonged Light Soaking of Single and Stacked Junction A-SI:H Solar Cells

1989 ◽  
Vol 149 ◽  
Author(s):  
P. Lechner ◽  
B. Scheppat ◽  
R. Geyer ◽  
H. Rübel ◽  
M. Gorn ◽  
...  
Keyword(s):  
Solar Cells ◽  
Layer Thickness ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Prolonged Exposure ◽  
Single Cells ◽  
Open Circuit ◽  
Si Solar Cells ◽  
Extended Exposure ◽  
Interface Effects

ABSTRACTLight-induced degradation of a-Si solar cells is dependent on their design. The degradation rate for single cells increases with i-layer thickness. Very thin i-layer devices (d < 100 nm) exhibit a delayed onset of degradation which is accompanied by a severe loss of open circuit voltage at prolonged exposure times. By extrapolating i-layer thickness to zero and therefore separating bulk and interface effects, the latter may account for a substantial loss of stability. The introduction of a SiC buffer layer at the p/i interface results in a considerable higher degradation mainly caused by a loss in fill factor.Double stacked cells, as compared to single cells having similar initial efficiences, show higher stability. The instability at extended exposure times of very thin single cells as used in a tandem configuration did not influence the stacked device.

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Reducing recombination and enhancing open circuit voltage by Strontium-alloying in multiple cation perovskite solar cells

2017 ◽  
Author(s):  
Pietro Caprioglio ◽  
Fengshuo Zu ◽  
Christian M. Wolff ◽  
Martin Stolterfhot ◽  
Norbert Koch ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit

Monolithic perovskite silicon tandem solar cells with high-bandgap perovskite absorber exceeding 1.8 V open-circuit voltage

2019 ◽  
Author(s):  
Kristina M. Winkler ◽  
Ines Ketterer ◽  
Alexander J. Bett ◽  
Özde Kabakli ◽  
Martin Bivour ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Tandem Solar Cells

Importance of interfacial crystallinity to reduce open-circuit voltage loss in organic solar cells

2019 ◽  
Vol 115 (15) ◽  
pp. 153301 ◽  
Author(s):  
Seiichiro Izawa ◽  
Naoto Shintaku ◽  
Mitsuru Kikuchi ◽  
Masahiro Hiramoto
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Voltage Loss
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