Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiation

1978 ◽  
Vol 18 (10) ◽  
pp. 5545-5559 ◽  
Author(s):  
P. W. Chye ◽  
I. Lindau ◽  
P. Pianetta ◽  
C. M. Garner ◽  
C. Y. Su ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Barrier Formation ◽  
Photoemission Study

Growth Mode And Initial Stage Schottky Barrier Formation At The In/GaAs Interface: A Photoemission Study

1988 ◽  
Author(s):  
Renyu Cao ◽  
Ken Miyano ◽  
K.Ken. Chin ◽  
Ingolf Lindau ◽  
William E. Spicer
Keyword(s):  
Schottky Barrier ◽  
Growth Mode ◽  
Barrier Formation ◽  
Initial Stage ◽  
Photoemission Study

Chemical Reaction at the Ni/Inp (110) and Ni/GaAs (110) Interfaces

1983 ◽  
Vol 25 ◽  
Author(s):  
T. Kendelewicz ◽  
W. G. Petro ◽  
M. D. Williams ◽  
S. H. Pan ◽  
I. Lindau ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Valence Band ◽  
Chemical Reaction ◽  
Excitation Source ◽  
Nickel Phosphide ◽  
Auger Transition ◽  
Sequential Deposition ◽  
Barrier Formation ◽  
Initial Stage

ABSTRACTThe chemical reaction at the Ni/InP (110) and Ni/GaAs (110) interfaces produced by sequential deposition of thin Ni overlayers onto cleaved semiconductor surfaces has been investigated with valence band (VB) and core level photoemission and Auger spectroscopies using synchrotron radiation as the excitation source. By monitoring changes in the VB, P 2p, In 4d, Ga 3d, As 3d, and Ni 3p photoemission spectra and the lineshape of the P LVV Auger transition during the initial stage of Schottky barrier formation, we found that for both interfaces the first few Å of Ni react strongly with the surface resulting in the formation of a nickel phosphide or nickel arsenide. At the same time, segregation of metallic In or Ga is observed.

From synchrotron radiation to I-V measurements of GaAs schottky barrier formation

1990 ◽  
Vol 41-42 ◽  
pp. 1-16 ◽  
Author(s):  
W.E. Spicer ◽  
R. Cao ◽  
K. Miyano ◽  
T. Kendelewicz ◽  
I. Lindau ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Barrier Formation

Synchrotron-radiation photoemission study of Ba on W(110)

1998 ◽  
Vol 58 (7) ◽  
pp. 4149-4155 ◽  
Author(s):  
Tun-Wen Pi ◽  
Ie-Hong Hong ◽  
Chiu-Ping Cheng
Keyword(s):  
Synchrotron Radiation ◽  
Photoemission Study ◽  
Synchrotron Radiation Photoemission

Effect of annealing Sb/InP(110) interfaces and Schottky barrier formation of Ag on annealed Sb/InP(110) surfaces

1991 ◽  
Vol 58 (20) ◽  
pp. 2243-2245 ◽  
Author(s):  
Masao Yamada ◽  
Anita K. Wahi ◽  
Paul L. Meissner ◽  
Alberto Herrera‐Gomez ◽  
Tom Kendelewicz ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Formation

Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360–10 nm) using Synchrotron Radiation

2003 ◽  
Vol 798 ◽  
Author(s):  
Atsushi Motogaito ◽  
Kazumasa Hiramatsu ◽  
Yasuhiro Shibata ◽  
Hironobu Watanabe ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Wavelength Range ◽  
Epitaxial Layer ◽  
Device Performance ◽  
Uv Detectors ◽  
X Ray ◽  
High Responsivity ◽  
Vacuum Uv

ABSTRACTCharacterizations of transparent Schottky barrier GaN and AlGaN UV detectors in the vacuum UV (VUV) and soft X-ray (SX) region using synchrotron radiation are described. In the GaN UV detectors, the responsivity achieved about 0.05 A/W at 95 eV (13 nm). Thus, their device performance is shown between 3.4 and 100 eV (10 and 360 nm). Furthermore, the high responsivity spectra were realized by using AlGaN Schottky UV detectors consisting of Al0.5Ga0.5N on AlN epitaxial layer.

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