Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy

1984 ◽  
Vol 44 (3) ◽  
pp. 313-315 ◽  
Author(s):  
R. N. Bicknell ◽  
R. W. Yanka ◽  
N. C. Giles ◽  
J. F. Schetzina ◽  
T. J. Magee ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Perfection ◽  
Gaas Substrates ◽  
High Structural Perfection ◽  
Cdte Films

scholarly journals Structure of Sc2O3 Films Epitaxially Grown on α-Al2O3 (111)

2004 ◽  
Vol 811 ◽  
Author(s):  
A. R. Kortan ◽  
M. Hong ◽  
J. Kwo ◽  
P. Chang ◽  
C. P. Chen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Fold Axis ◽  
Uniform Thickness ◽  
Structural Perfection ◽  
Plane Orientation ◽  
Axis Parallel ◽  
High Structural Perfection ◽  
Α Al2o3

ABSTRACTWe have characterized the structure of the epitaxial Sc2O3 films grown on a α-Al2O3 (111) substrate using molecular beam epitaxy (MBE) techniques. The Sc2O3 films grow in the bulk bixbyite phase with a very uniform thickness, and a high structural perfection. They grow with their cubic (111) axis parallel to the rhombohedral (111) axis of the sapphire substrate. The in-plane orientation of the films, however, is rotated by ±30 degrees with respect to the substrate rhombohedral axes. This is explained by the presence of two equivalent orientations of the 3-fold axis of the film on the quasi 6-fold surface of the substrate.

Properties of doped CdTe films grown by photoassisted molecular‐beam epitaxy

1988 ◽  
Vol 6 (4) ◽  
pp. 2821-2825 ◽  
Author(s):  
S. Hwang ◽  
R. L. Harper ◽  
K. A. Harris ◽  
N. C. Giles ◽  
R. N. Bicknell ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cdte Films

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Structural Defects ◽  
Donor Concentration ◽  
Ion Milling ◽  
Electrical And Optical Properties ◽  
Gaas Substrates ◽  
Cdte Buffer

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

2000 ◽  
Vol 360 (1-2) ◽  
pp. 195-204 ◽  
Author(s):  
G. Kiriakidis ◽  
K. Moschovis ◽  
P. Uusimaa ◽  
A. Salokatve ◽  
M. Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Green Laser ◽  
Gaas Substrates

Molecular Beam Epitaxy of GaSb on GaAs Substrates with Compositionally Graded LT-GaAs x Sb 1- x Buffer Layers

2017 ◽  
Vol 34 (1) ◽  
pp. 018101
Author(s):  
Hai-Long Yu ◽  
Hao-Yue Wu ◽  
Hai-Jun Zhu ◽  
Guo-Feng Song ◽  
Yun Xu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Gaas Substrates ◽  
Lt Gaas

High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n+-i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates

2005 ◽  
Vol 44 (No. 17) ◽  
pp. L508-L510 ◽  
Author(s):  
Tomoki Abe ◽  
Koshi Ando ◽  
Katsushi Ikumi ◽  
Hiroyasu Maeta ◽  
Junji Naruse ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Gaas Substrates ◽  
P Type

Raman characterization of molecular‐beam‐epitaxy‐grown GaAlSb on GaSb and GaAs substrates

1989 ◽  
Vol 65 (5) ◽  
pp. 1942-1946 ◽  
Author(s):  
Miles Haines ◽  
T. Kerr ◽  
S. Newstead ◽  
P. B. Kirby
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Raman Characterization
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