Temperature dependence of interface recombination and radiative recombination in (Al, Ga)As heterostructures

1983 ◽  
Vol 42 (9) ◽  
pp. 813-815 ◽  
Author(s):  
G. W. ’t Hooft ◽  
C. van Opdorp
Keyword(s):  
Temperature Dependence ◽  
Radiative Recombination ◽  
Interface Recombination

Temperature dependence of the radiative recombination coefficient in silicon

1974 ◽  
Vol 21 (1) ◽  
pp. 357-367 ◽  
Author(s):  
H. Schlangenotto ◽  
H. Maeder ◽  
W. Gerlach
Keyword(s):  
Temperature Dependence ◽  
Radiative Recombination ◽  
Recombination Coefficient

Temperature dependence of the radiative recombination time in laterally coupled GaAs quantum dots

2018 ◽  
Vol 457 ◽  
pp. 497-500 ◽  
Author(s):  
Heedae Kim ◽  
Akihiro Murayama ◽  
Jongsu Kim ◽  
Jindong Song
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Radiative Recombination ◽  
Recombination Time

Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon

2003 ◽  
Vol 94 (8) ◽  
pp. 4930 ◽  
Author(s):  
T. Trupke ◽  
M. A. Green ◽  
P. Würfel ◽  
P. P. Altermatt ◽  
A. Wang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Radiative Recombination ◽  
Crystalline Silicon ◽  
Recombination Coefficient

1.54μm luminescence of β-FeSi2 grown on Au-coated Si substrates

2012 ◽  
Vol 1396 ◽  
Author(s):  
Kensuke Akiyama ◽  
Hiroshi Funakubo ◽  
Masaru Itakura
Keyword(s):  
Temperature Dependence ◽  
Radiative Recombination ◽  
Recombination Center ◽  
Quality Level ◽  
Nonradiative Recombination ◽  
Si Substrate ◽  
High Quality ◽  
Nonradiative Recombination Center ◽  
Si Substrates ◽  
Photoluminescence Peak

ABSTRACTA clear PL spectrum was observed from β-FeSi2 grains on gold (Au)-coated (100)Si substrates, and indicated the formation of crystal with the same high quality level as the β-FeSi2 on a copper (Cu)-coated Si substrate. Moreover, the temperature dependence of photoluminescence peak intensities showed lower density of the nonradiative recombination center in β-FeSi2 grains on Au-coated Si substrates than that of β-FeSi2 film on Cu-coated Si. Au was not detected in β-FeSi2 grains by STEM-EDX observation, while Cu was observed in the grains and grain boundaries of β-FeSi2 and rolled as non-radiative recombination center.

Ultralow Absorption Coefficient and Temperature Dependence of Radiative Recombination of CH3NH3PbI3 Perovskite from Photoluminescence

2015 ◽  
Vol 6 (5) ◽  
pp. 767-772 ◽  
Author(s):  
Chog Barugkin ◽  
Jinjin Cong ◽  
The Duong ◽  
Shakir Rahman ◽  
Hieu T. Nguyen ◽  
...  
Keyword(s):  
Absorption Coefficient ◽  
Temperature Dependence ◽  
Radiative Recombination
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