Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon

2003 ◽  
Vol 94 (8) ◽  
pp. 4930 ◽  
Author(s):  
T. Trupke ◽  
M. A. Green ◽  
P. Würfel ◽  
P. P. Altermatt ◽  
A. Wang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Radiative Recombination ◽  
Crystalline Silicon ◽  
Recombination Coefficient

Temperature dependence of the radiative recombination coefficient in silicon

1974 ◽  
Vol 21 (1) ◽  
pp. 357-367 ◽  
Author(s):  
H. Schlangenotto ◽  
H. Maeder ◽  
W. Gerlach
Keyword(s):  
Temperature Dependence ◽  
Radiative Recombination ◽  
Recombination Coefficient

scholarly journals Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements

2017 ◽  
Vol 124 ◽  
pp. 10-17
Author(s):  
Rudolf Brüggemann ◽  
Ming Xu ◽  
José Alvarez ◽  
Mohamed Boutchich ◽  
Jean-Paul Kleider
Keyword(s):  
Low Temperatures ◽  
Radiative Recombination ◽  
Crystalline Silicon ◽  
Recombination Coefficient

The Effect of Concentrated Light Intensity on Temperature Coefficient of the InGaP/InGaAs/Ge Triple-Junction Solar Cell

2015 ◽  
Vol 8 (1) ◽  
pp. 106-111 ◽  
Author(s):  
Zilong Wang ◽  
Hua Zhang ◽  
Wei Zhao ◽  
Zhigang Zhou ◽  
Mengxun Chen
Keyword(s):  
Solar Cell ◽  
Light Intensity ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Triple Junction ◽  
Concentration Ratio ◽  
Crystalline Silicon ◽  
Photovoltaic System ◽  
Solar Pv ◽  
Junction Solar Cell

Research on automatic tracking solar concentrator photovoltaic systems has gained increasing attention in developing the solar PV technology. A paraboloidal concentrator with secondary optic is developed for a three-junction GaInP/GalnAs/Ge solar cell. The concentration ratio of this system is 200 and the photovoltaic cell is cooled by the heat pipe. A detailed analysis on the temperature coefficient influence factors of triple-junction solar cell under different high concentrations (75X, 100X, 125X, 150X, 175X and 200X) has been conducted based on the dish-style concentration photovoltaic system. The results show that under high concentrated light intensity, the temperature coefficient of Voc of triple-junction solar cell is increasing as the concentration ratio increases, from -10.84 mV/°C @ 75X growth to -4.73mV/°C @ 200X. At low concentration, the temperature coefficient of Voc increases rapidly, and then increases slowly as the concentration ratio increases. The temperature dependence of η increased from -0.346%/°C @ 75X growth to - 0.103%/°C @ 200X and the temperature dependence of Pmm and FF increased from -0.125 W/°C, -0.35%/°C @ 75X growth to -0.048W/°C, -0.076%/°C @ 200X respectively. It indicated that the temperature coefficient of three-junction GaInP/GalnAs/Ge solar cell is better than that of crystalline silicon cell array under concentrating light intensity.

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