Temperature dependence of the radiative recombination time in laterally coupled GaAs quantum dots

2018 ◽  
Vol 457 ◽  
pp. 497-500 ◽  
Author(s):  
Heedae Kim ◽  
Akihiro Murayama ◽  
Jongsu Kim ◽  
Jindong Song
2014 ◽  
Vol 22 (15) ◽  
pp. 17959 ◽  
Author(s):  
W. Lee ◽  
T. Kiba ◽  
A. Murayama ◽  
C. Sartel ◽  
V. Sallet ◽  
...  

JETP Letters ◽  
2010 ◽  
Vol 92 (1) ◽  
pp. 57-62
Author(s):  
S. V. Zaitsev ◽  
T. Kümmell ◽  
G. Bacher ◽  
D. Hommel

2018 ◽  
Vol 60 (8) ◽  
pp. 1542
Author(s):  
Т.С. Шамирзаев

AbstractThe behavior of excitons in heterostructures with indirect-gap GaAs/AlAs quantum wells and (In, Al)As/AlAs quantum dots is discussed. The possibilities of controlled change of the exciton radiative recombination time in the range from dozens of nanoseconds to dozens of microseconds, experimental study of the spin dynamics of long-lived localized excitons, and use of the optical resonant methods for exciting the indirect-band exciton states are demonstrated.


2000 ◽  
Vol 214-215 ◽  
pp. 770-773 ◽  
Author(s):  
Yasuhiro Murase ◽  
Takeshi Ota ◽  
Nobuhiro Yasui ◽  
Akihiro Shikimi ◽  
Tsuguki Noma ◽  
...  

2006 ◽  
Vol 21 (2) ◽  
pp. 162-166
Author(s):  
N V Kryzhanovskaya ◽  
P Zimmer ◽  
N N Ledentsov ◽  
A Hoffmann ◽  
D Bimberg ◽  
...  

Author(s):  
Kanghong Wang ◽  
Jiabin Liu ◽  
Yi Tao ◽  
Daniele Benetti ◽  
Federico Rosei ◽  
...  

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