Visible cw single quantum well (AlGa)As diode lasers

1983 ◽  
Vol 42 (2) ◽  
pp. 134-136 ◽  
Author(s):  
C. Lindström ◽  
R. D. Burnham ◽  
D. R. Scifres
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Single Quantum ◽  
Single Quantum Well

AlInGaAs-AlGaAs strained single-quantum-well diode lasers

1991 ◽  
Vol 3 (1) ◽  
pp. 4-5 ◽  
Author(s):  
C.A. Wang ◽  
J.N. Walpole ◽  
H.K. Choi ◽  
L.J. Missaggia
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Single Quantum ◽  
Single Quantum Well

High-power, high-temperature operation of AlInGaAs-AlGaAs strained single-quantum-well diode lasers

1991 ◽  
Vol 3 (10) ◽  
pp. 857-859 ◽  
Author(s):  
H.K. Choi ◽  
C.A. Wang ◽  
D.F. Kolesar ◽  
R.L. Aggarwal ◽  
J.N. Walpole
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
High Temperature Operation

Femtosecond gain dynamics in InGaAs/AlGaAs strained‐layer single‐quantum‐well diode lasers

1993 ◽  
Vol 63 (1) ◽  
pp. 96-98 ◽  
Author(s):  
C.‐K. Sun ◽  
H. K. Choi ◽  
C. A. Wang ◽  
J. G. Fujimoto
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer

cw room‐temperature operation of GaAlAs single quantum well visible (7300 Å) diode lasers at 100 mW

1983 ◽  
Vol 42 (11) ◽  
pp. 937-939 ◽  
Author(s):  
R. D. Burnham ◽  
C. Lindström ◽  
T. L. Paoli ◽  
D. R. Scifres ◽  
W. Streifer ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Diode Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Room Temperature Operation

Theory of carrier gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers

1995 ◽  
Vol 17 (4) ◽  
pp. 355
Author(s):  
G.D. Sanders ◽  
C.J. Stanton ◽  
C.-K. Sun ◽  
B. Golubovic ◽  
J.G. Fujimoto
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer
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