Temperature dependence of minority‐carrier recombination velocities at grain boundaries in silicon

1982 ◽  
Vol 41 (9) ◽  
pp. 855-857 ◽  
Author(s):  
C. H. Seager
Keyword(s):  
Temperature Dependence ◽  
Grain Boundaries ◽  
Minority Carrier ◽  
Carrier Recombination

Characterization of Defects in Silicon Ribbons By Combined Ebic and Hvem

1980 ◽  
Vol 2 ◽  
Author(s):  
Horst Strunk ◽  
Brian Cunningham ◽  
Dieter Ast
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Structural Properties ◽  
Minority Carrier ◽  
Higher Order ◽  
Twin Boundaries ◽  
Planar Defects ◽  
Partial Dislocations ◽  
Carrier Recombination

ABSTRACTThe electrical properties and crystallographic nature of linear and planar defects in EFG silicon ribbons were studied. A direct correlation between electrical and structural properties was obtained by imaging the same areas first with EBIC and then with HVEM. Coherent twin boundaries were found to be electrically inactive, but higher order twins and other grain boundaries generally enhanced minority carrier recombination. Partial dislocations confined to coherent twin boundaries were usually electrically active, but in certain instances partial dislocations were observed which had no apparent EBIC contrast.

Chemical Origin of the Grain Boundary Carrier Recombination in Silicon Bicrystals

1985 ◽  
Vol 59 ◽  
Author(s):  
F. Battistella ◽  
A. Rocher ◽  
A. George
Keyword(s):  
Electron Microscopy ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Direct Relationship ◽  
Minority Carrier ◽  
Neutral Atmosphere ◽  
X Ray ◽  
Heterogeneous Recombination ◽  
Carrier Recombination ◽  
Transmission Electron

ABSTRACTThe minority carrier recombination related to grain boundaries is studied by the SEM/EBIC technique. The specimens investigated are silicon bicrystals obtained by the Czochralski pulling process. The specimens are heated for 2 hours at 750°C in a neutral atmosphere. Heterogeneous recombination of the grain boundaries is then observed.X-Ray topography and Transmission Electron Microscopy (TEM) have been performed to determine the origin of the heterogeneous recombination. A direct relationship between the local recombination along the grain boundary and the precipitates localized at the interface has been established. The chemical origin of the precipitates is discussed.

The Electrical Behavior of Grain Boundaries in Silicon

1982 ◽  
Vol 14 ◽  
Author(s):  
C. H. Seager
Keyword(s):  
Grain Boundaries ◽  
Carrier Transport ◽  
Minority Carrier ◽  
Group Iv ◽  
Zero Bias ◽  
Barrier Heights ◽  
Group Iv Semiconductors ◽  
Carrier Recombination ◽  
Primitive State ◽  
Recombination Velocity

ABSTRACTDespite the fact that lattice imaging studies have shown that grain boundaries in group IV semiconductors often have structures which are complicated and inhomogeneous on the scale of tens-tohundreds of angstroms, simple theories assuming uniform double depletion layers have recently been shown to successfully predict many of the majority carrier transport properties of these defects. On the other hand our knowledge of the interaction of grain boundaries with minority carriers is in a considerably more primitive state. I will describe recent attempts to understand the effects of illumination on grain boundary potential barrier heights and the influence of these defects on the optically generated minority carrier population. Quantifying this latter interaction is particularly important in estimating the performance of polycrystalline solar cells. Simple but elegant scanned excitation measurements for measuring s, the minority carrier recombination velocity at grain boundaries, will be reviewed. I will discuss recent measurements of s as a function of temperature and illumination intensity and show how these data can be correlated with zero-bias impedance measurements.

Light Effects on Grain Boundary Properties in Silicon

1981 ◽  
Vol 5 ◽  
Author(s):  
L. J. Cheng ◽  
C. M. Shyu
Keyword(s):  
Experimental Data ◽  
Grain Boundary ◽  
Minority Carrier ◽  
State Density ◽  
Boundary State ◽  
Carrier Recombination ◽  
Boundary Properties ◽  
Light Effects ◽  
Recombination Velocity ◽  
P Type

ABSTRACTWe have studied the photoconductivity of grain boundaries in p–type silicon. The result demonstrates the applicability of the technique for the measurement of minority carrier recombination velocity at the grain boundary. The experimental data are consistent with the thought that the recombination velocity increases with the boundary state density and light intensity.

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

scholarly journals Microcharacterization of Interfaces

1982 ◽  
Vol 18 ◽  
Author(s):  
P. M. PETROFF
Keyword(s):  
Phase Contrast ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Carrier Recombination ◽  
Roughening Transition ◽  
Semiconductor Heterostructure ◽  
Transmission Electron ◽  
Quantum Well Wire ◽  
Interfacial Strain

The atomic structure of semiconductor heterostructure interfaces and metalsemiconductor interfaces are best characterized by transmission electron microscopy (TEM). Both phase contrast TEM and structure factor contrast TEM are able to distinguish very small structural (two monolayers) or compositional (less than 0.2%) fluctuations at interfaces. Applications of these techniques to the study of the roughening transition temperature at the Gal−xAlxAs–GaAs and Ga1−xAlxAs–Ge interfaces grown by molecular beam epitaxy are presented. Minority carrier recombination at interfaces is characterized on a microscopic scale by low temperature cathodoluminescence. This technique is used to demonstrate the role of interfaces in gettering defects in Gal1−xAlxAs/GaAs heterostructures. Finally, the effects of interfacial strain in producing a localization of the luminescence in GaAs quantum well wire structures will be discussed.

Minority carrier recombination in post-growth hydrogenated AlGaAs

1993 ◽  
Vol 8 (2) ◽  
pp. 224-229 ◽  
Author(s):  
G Oelgart ◽  
G Grummt ◽  
M Proctor ◽  
F -K Reinhart
Keyword(s):  
Minority Carrier ◽  
Carrier Recombination
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