Amorphous‐silicon/silicon‐oxynitride field‐effect transistors

Kouichirou Ishibashi; Masakiyo Matsumura

doi:10.1063/1.93569

Amorphous‐silicon/silicon‐oxynitride field‐effect transistors

Applied Physics Letters ◽

10.1063/1.93569 ◽

1982 ◽

Vol 41 (5) ◽

pp. 454-456 ◽

Cited By ~ 21

Author(s):

Kouichirou Ishibashi ◽

Masakiyo Matsumura

Keyword(s):

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Oxynitride ◽

Silicon Silicon

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Amorphous-silicon silicon-nitride field-effect transistors

Electronics Letters ◽

10.1049/el:19820411 ◽

1982 ◽

Vol 18 (14) ◽

pp. 599 ◽

Cited By ~ 4

Author(s):

K. Katoh ◽

M. Yasui ◽

H. Watanabe

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Silicon

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Density of bulk and surface states and static characteristics of amorphous silicon field-effect transistors

phys stat sol (a) ◽

10.1002/pssa.2211430120 ◽

1994 ◽

Vol 143 (1) ◽

pp. 157-167

Author(s):

E. V. Grekov

Keyword(s):

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Surface States ◽

Static Characteristics

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Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress

Applied Physics Letters ◽

10.1063/1.3586780 ◽

2011 ◽

Vol 98 (18) ◽

pp. 183506 ◽

Cited By ~ 18

Author(s):

M. Toledano-Luque ◽

B. Kaczer ◽

Ph. J. Roussel ◽

J. Franco ◽

L. Å. Ragnarsson ◽

...

Keyword(s):

Temperature Stress ◽

Field Effect ◽

Positive Charge ◽

Field Effect Transistors ◽

Silicon Oxynitride ◽

Gate Bias ◽

Bias Temperature Stress ◽

Depth Localization

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Vertical-Type Amorphous-Silicon Field-Effect Transistors with Small Parasitic Elements

Japanese Journal of Applied Physics ◽

10.1143/jjap.25.l798 ◽

1986 ◽

Vol 25 (Part 2, No. 9) ◽

pp. L798-L800 ◽

Cited By ~ 6

Author(s):

Yasutaka Uchida ◽

Yoshiaki Watanabe ◽

Masaru Takabatake ◽

Masakiyo Matsumura

Keyword(s):

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistors

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The characteristics and properties of optimised amorphous silicon field effect transistors

Applied Physics A Solids and Surface ◽

10.1007/bf00616310 ◽

1983 ◽

Vol 31 (2) ◽

pp. 87-92 ◽

Cited By ~ 81

Author(s):

K. D. Mackenzie ◽

A. J. Snell ◽

I. French ◽

P. G. LeComber ◽

W. E. Spear

Keyword(s):

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistors

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The effect of?-irradiation on amorphous silicon field effect transistors

Applied Physics A Solids and Surface ◽

10.1007/bf00617183 ◽

1983 ◽

Vol 31 (1) ◽

pp. 19-22 ◽

Cited By ~ 28

Author(s):

I. D. French ◽

A. J. Snell ◽

P. G. LeComber ◽

J. H. Stephen

Keyword(s):

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistors

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Proposed vertical-type amorphous-silicon field-effect transistors

IEEE Electron Device Letters ◽

10.1109/edl.1984.25849 ◽

1984 ◽

Vol 5 (4) ◽

pp. 105-107 ◽

Cited By ~ 40

Author(s):

Y. Uchida ◽

Y. Nara ◽

M. Matsumura

Keyword(s):

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistors

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Annealing kinetics in amorphous silicon field-effect transistors

Philosophical Magazine B ◽

10.1080/13642819208217911 ◽

1992 ◽

Vol 65 (5) ◽

pp. 933-944 ◽

Cited By ~ 8

Author(s):

Byung Seong Bae ◽

Choochon Lee

Keyword(s):

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistors

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Theoretical analysis of channel‐doped amorphous silicon field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.346703 ◽

1990 ◽

Vol 68 (3) ◽

pp. 1335-1339 ◽

Cited By ~ 1

Author(s):

Jyh‐Ling Lin ◽

Wen‐Jyh Sah ◽

Si‐Chen Lee

Keyword(s):

Theoretical Analysis ◽

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistors

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High‐performance amorphous‐silicon field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.327599 ◽

1980 ◽

Vol 51 (12) ◽

pp. 6443-6444 ◽

Cited By ~ 34

Author(s):

Masakiyo Matsumura ◽

Yasuo Nara

Keyword(s):

Amorphous Silicon ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors

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