Theoretical analysis of channel‐doped amorphous silicon field‐effect transistors

1990 ◽  
Vol 68 (3) ◽  
pp. 1335-1339 ◽  
Author(s):  
Jyh‐Ling Lin ◽  
Wen‐Jyh Sah ◽  
Si‐Chen Lee
Keyword(s):  
Theoretical Analysis ◽  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistors

Theoretical Analysis of Amorphous-Silicon Field-Effect-Transistors

1983 ◽  
Vol 22 (Part 1, No. 3) ◽  
pp. 511-517 ◽  
Author(s):  
Satoru Kishida ◽  
Yasuo Naruke ◽  
Yasutaka Uchida ◽  
Masakiyo Matsumura
Keyword(s):  
Theoretical Analysis ◽  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistors

Vertical-Type Amorphous-Silicon Field-Effect Transistors with Small Parasitic Elements

1986 ◽  
Vol 25 (Part 2, No. 9) ◽  
pp. L798-L800 ◽  
Author(s):  
Yasutaka Uchida ◽  
Yoshiaki Watanabe ◽  
Masaru Takabatake ◽  
Masakiyo Matsumura
Keyword(s):  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistors

The characteristics and properties of optimised amorphous silicon field effect transistors

1983 ◽  
Vol 31 (2) ◽  
pp. 87-92 ◽  
Author(s):  
K. D. Mackenzie ◽  
A. J. Snell ◽  
I. French ◽  
P. G. LeComber ◽  
W. E. Spear
Keyword(s):  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistors

Amorphous-silicon silicon-nitride field-effect transistors

1982 ◽  
Vol 18 (14) ◽  
pp. 599 ◽  
Author(s):  
K. Katoh ◽  
M. Yasui ◽  
H. Watanabe
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Silicon

The effect of?-irradiation on amorphous silicon field effect transistors

1983 ◽  
Vol 31 (1) ◽  
pp. 19-22 ◽  
Author(s):  
I. D. French ◽  
A. J. Snell ◽  
P. G. LeComber ◽  
J. H. Stephen
Keyword(s):  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistors

Proposed vertical-type amorphous-silicon field-effect transistors

1984 ◽  
Vol 5 (4) ◽  
pp. 105-107 ◽  
Author(s):  
Y. Uchida ◽  
Y. Nara ◽  
M. Matsumura
Keyword(s):  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistors

Annealing kinetics in amorphous silicon field-effect transistors

1992 ◽  
Vol 65 (5) ◽  
pp. 933-944 ◽  
Author(s):  
Byung Seong Bae ◽  
Choochon Lee
Keyword(s):  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistors

High‐performance amorphous‐silicon field‐effect transistors

1980 ◽  
Vol 51 (12) ◽  
pp. 6443-6444 ◽  
Author(s):  
Masakiyo Matsumura ◽  
Yasuo Nara
Keyword(s):  
Amorphous Silicon ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors

Low Temperature Characteristics of Hydrogenated Amorphous Silicon Field Effect Transistors

1989 ◽  
Vol 149 ◽  
Author(s):  
Byung-Seong Bae ◽  
Deok-Ho Cho ◽  
Jae-Hee Lee ◽  
Choochon Lee ◽  
Jin Jang
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Field Effect Mobility ◽  
Temperature Dependent ◽  
Hydrogenated Amorphous ◽  
Very Low Temperature

ABSTRACTWe investigated the temperature dependent characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT's) at temperatures down to 20 K. With decreasing temperature, the threshold voltage increased, the field effect mobility and the on-current decreased. The measured on-currents versus inverse temperature above 80 K are represented as the sum of two exponentially varied currents. It is concluded that on-current is nearest-neighbour hopping between 120 K and 80 K. Below this temperature, the temperature dependence of on-current is explained by variable range hopping and below about 30 K on-current becomes nearly independent of temperature. At very low temperature hopping probability may be governed not by temperature but by temperature independent tunneling, depending on the overlap of the wave function. The explanation of threshold voltage increase at low temperature is given.

Sign in / Sign up

Export Citation Format

Share Document