Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy

1982 ◽  
Vol 40 (3) ◽  
pp. 217-219 ◽  
Author(s):  
W. T. Tsang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Graded Index ◽  
Low Threshold

High‐peak‐power low‐threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration‐enhanced molecular beam epitaxy

1988 ◽  
Vol 53 (14) ◽  
pp. 1248-1250 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
Akbar Nouhi ◽  
Gouri Radhakrishnan ◽  
John K. Liu ◽  
Robert J. Lang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Peak Power ◽  
Molecular Beam ◽  
Laser Diodes ◽  
High Peak ◽  
High Peak Power ◽  
Si Substrates ◽  
Low Threshold ◽  
Stripe Laser

Low threshold current AlGaAs/GaAs distributed feedback laser grown by two‐step molecular beam epitaxy

1985 ◽  
Vol 47 (6) ◽  
pp. 570-572 ◽  
Author(s):  
Keisuke Kojima ◽  
Susumu Noda ◽  
Kazumasa Mitsunaga ◽  
Kazuo Kyuma ◽  
Takashi Nakayama
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Threshold Current ◽  
Distributed Feedback ◽  
Distributed Feedback Laser ◽  
Low Threshold
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