Current threshold uniformity of shallow proton stripe GaAlAs double heterostructure lasers grown by metalorganic‐chemical vapor deposition

R. D. Burnham; D. R. Scifres; W. Streifer

doi:10.1063/1.93007

Current threshold uniformity of shallow proton stripe GaAlAs double heterostructure lasers grown by metalorganic‐chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.93007 ◽

1982 ◽

Vol 40 (2) ◽

pp. 118-119 ◽

Cited By ~ 17

Author(s):

R. D. Burnham ◽

D. R. Scifres ◽

W. Streifer

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Current Threshold ◽

Metalorganic Chemical

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Single‐longitudinal‐mode metalorganic chemical‐vapor‐deposition self‐aligned GaAlAs‐GaAs double‐heterostructure lasers

Applied Physics Letters ◽

10.1063/1.91900 ◽

1980 ◽

Vol 37 (3) ◽

pp. 262-263 ◽

Cited By ~ 34

Author(s):

J. J. Coleman ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Longitudinal Mode ◽

Single Longitudinal Mode ◽

Double Heterostructure ◽

Metalorganic Chemical

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Low‐threshold high‐efficiency AlGaAs‐GaAs double‐heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.98185 ◽

1987 ◽

Vol 50 (7) ◽

pp. 407-409 ◽

Cited By ~ 38

Author(s):

R. D. Dupuis ◽

J. P. van der Ziel ◽

R. A. Logan ◽

J. M. Brown ◽

C. J. Pinzone

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

High Efficiency ◽

Chemical Vapor ◽

Double Heterostructure ◽

Si Substrates ◽

Low Threshold ◽

Injection Lasers ◽

Metalorganic Chemical

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626.2‐nm pulsed operation (300 K) of an AlGaInP double heterostructure laser grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.95804 ◽

1985 ◽

Vol 46 (1) ◽

pp. 7-9 ◽

Cited By ~ 19

Author(s):

Kenichi Kobayashi ◽

Isao Hino ◽

Tohru Suzuki

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Heterostructure Laser ◽

Metalorganic Chemical

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Erratum: “Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by metalorganic chemical vapor deposition” [Appl. Phys. Lett. 68, 1072 (1996)]

Applied Physics Letters ◽

10.1063/1.120562 ◽

1997 ◽

Vol 71 (11) ◽

pp. 1585-1585

Author(s):

J. Bohrer ◽

A. Krost ◽

R. Heitz ◽

F. Heinrichsdorff ◽

L. Eckey ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Metalorganic Chemical

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Epitaxial growth of ZnMgTe and double heterostructure of on GaAs substrate by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(95)00244-8 ◽

1995 ◽

Vol 156 (4) ◽

pp. 373-376 ◽

Cited By ~ 30

Author(s):

Takeharu Asano ◽

Kenji Funato ◽

Fumihiko Nakamura ◽

Akira Ishibashi

Keyword(s):

Chemical Vapor Deposition ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Gaas Substrate ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Metalorganic Chemical

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Yellow‐emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.95459 ◽

1984 ◽

Vol 45 (9) ◽

pp. 964-966 ◽

Cited By ~ 27

Author(s):

M. Ikeda ◽

M. Honda ◽

Y. Mori ◽

K. Kaneko ◽

N. Watanabe

Keyword(s):

Chemical Vapor Deposition ◽

Laser Diode ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Heterostructure Laser ◽

Metalorganic Chemical

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An embedded stripe Be‐implanted GaAs/GaAlAs double heterostructure laser grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.95463 ◽

1984 ◽

Vol 45 (9) ◽

pp. 927-929 ◽

Cited By ~ 1

Author(s):

D. Fekete

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Heterostructure Laser ◽

Metalorganic Chemical

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Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.115716 ◽

1996 ◽

Vol 68 (8) ◽

pp. 1072-1074 ◽

Cited By ~ 25

Author(s):

J. Böhrer ◽

A. Krost ◽

R. Heitz ◽

F. Heinrichsdorff ◽

L. Eckey ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Metalorganic Chemical

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Very low threshold Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.90090 ◽

1978 ◽

Vol 32 (8) ◽

pp. 473-475 ◽

Cited By ~ 48

Author(s):

R. D. Dupuis ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Low Threshold ◽

Metalorganic Chemical

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cw operation of an AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.95363 ◽

1984 ◽

Vol 45 (6) ◽

pp. 661-663 ◽

Cited By ~ 21

Author(s):

M. Ikeda ◽

Y. Mori ◽

M. Takiguchi ◽

K. Kaneko ◽

N. Watanabe

Keyword(s):

Chemical Vapor Deposition ◽

Laser Diode ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Cw Operation ◽

Heterostructure Laser ◽

Metalorganic Chemical

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