626.2‐nm pulsed operation (300 K) of an AlGaInP double heterostructure laser grown by metalorganic chemical vapor deposition

Kenichi Kobayashi; Isao Hino; Tohru Suzuki

doi:10.1063/1.95804

626.2‐nm pulsed operation (300 K) of an AlGaInP double heterostructure laser grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.95804 ◽

1985 ◽

Vol 46 (1) ◽

pp. 7-9 ◽

Cited By ~ 19

Author(s):

Kenichi Kobayashi ◽

Isao Hino ◽

Tohru Suzuki

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Heterostructure Laser ◽

Metalorganic Chemical

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Yellow‐emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.95459 ◽

1984 ◽

Vol 45 (9) ◽

pp. 964-966 ◽

Cited By ~ 27

Author(s):

M. Ikeda ◽

M. Honda ◽

Y. Mori ◽

K. Kaneko ◽

N. Watanabe

Keyword(s):

Chemical Vapor Deposition ◽

Laser Diode ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Heterostructure Laser ◽

Metalorganic Chemical

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An embedded stripe Be‐implanted GaAs/GaAlAs double heterostructure laser grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.95463 ◽

1984 ◽

Vol 45 (9) ◽

pp. 927-929 ◽

Cited By ~ 1

Author(s):

D. Fekete

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Heterostructure Laser ◽

Metalorganic Chemical

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cw operation of an AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.95363 ◽

1984 ◽

Vol 45 (6) ◽

pp. 661-663 ◽

Cited By ~ 21

Author(s):

M. Ikeda ◽

Y. Mori ◽

M. Takiguchi ◽

K. Kaneko ◽

N. Watanabe

Keyword(s):

Chemical Vapor Deposition ◽

Laser Diode ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Cw Operation ◽

Heterostructure Laser ◽

Metalorganic Chemical

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GaInAsP/InP 1.35 μm double heterostructure laser grown on silicon substrate by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.355244 ◽

1993 ◽

Vol 74 (1) ◽

pp. 743-745 ◽

Cited By ~ 4

Author(s):

K. Mobarhan ◽

C. Jelen ◽

E. Kolev ◽

M. Razeghi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Silicon Substrate ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Heterostructure Laser ◽

Metalorganic Chemical

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Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.2671 ◽

1997 ◽

Vol 36 (Part 1, No. 5A) ◽

pp. 2671-2675 ◽

Cited By ~ 93

Author(s):

Shun-ichi Sato ◽

Yasuhiro Osawa ◽

Tetsuro Saitoh

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Double Heterostructure ◽

Heterostructure Laser ◽

Metalorganic Chemical ◽

Room Temperature Operation

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Single‐longitudinal‐mode metalorganic chemical‐vapor‐deposition self‐aligned GaAlAs‐GaAs double‐heterostructure lasers

Applied Physics Letters ◽

10.1063/1.91900 ◽

1980 ◽

Vol 37 (3) ◽

pp. 262-263 ◽

Cited By ~ 34

Author(s):

J. J. Coleman ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Longitudinal Mode ◽

Single Longitudinal Mode ◽

Double Heterostructure ◽

Metalorganic Chemical

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Fabrication of InGaAsP/InP buried heterostructure laser using reactive ion etching and metalorganic chemical vapor deposition

IEEE Photonics Technology Letters ◽

10.1109/68.205611 ◽

1993 ◽

Vol 5 (3) ◽

pp. 279-281 ◽

Cited By ~ 19

Author(s):

B.-T. Lee ◽

R.A. Logan ◽

R.F. Kalicek ◽

A.M. Sergent ◽

D.L. Coblentz ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Reactive Ion Etching ◽

Chemical Vapor ◽

Ion Etching ◽

Heterostructure Laser ◽

Buried Heterostructure ◽

Metalorganic Chemical

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Low‐threshold high‐efficiency AlGaAs‐GaAs double‐heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.98185 ◽

1987 ◽

Vol 50 (7) ◽

pp. 407-409 ◽

Cited By ~ 38

Author(s):

R. D. Dupuis ◽

J. P. van der Ziel ◽

R. A. Logan ◽

J. M. Brown ◽

C. J. Pinzone

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

High Efficiency ◽

Chemical Vapor ◽

Double Heterostructure ◽

Si Substrates ◽

Low Threshold ◽

Injection Lasers ◽

Metalorganic Chemical

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Room‐temperature continuous‐wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.96366 ◽

1985 ◽

Vol 47 (10) ◽

pp. 1027-1028 ◽

Cited By ~ 106

Author(s):

Masao Ikeda ◽

Yoshifumi Mori ◽

Hiromitsu Sato ◽

Kunio Kaneko ◽

Naozo Watanabe

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Heterostructure Laser ◽

Continuous Wave Operation ◽

Metalorganic Chemical

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Single mode laser with a V‐shaped active layer grown by metalorganic chemical vapor deposition: A v‐shaped double heterostructure laser

Journal of Applied Physics ◽

10.1063/1.329522 ◽

1981 ◽

Vol 52 (9) ◽

pp. 5429-5433 ◽

Cited By ~ 6

Author(s):

Yoshifumi Mori ◽

Osamu Matsuda ◽

Naozo Watanabe

Keyword(s):

Chemical Vapor Deposition ◽

Active Layer ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Single Mode ◽

Mode Laser ◽

Single Mode Laser ◽

Heterostructure Laser ◽

Metalorganic Chemical

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