Very low threshold Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

R. D. Dupuis; P. D. Dapkus

doi:10.1063/1.90090

Very low threshold Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.90090 ◽

1978 ◽

Vol 32 (8) ◽

pp. 473-475 ◽

Cited By ~ 48

Author(s):

R. D. Dupuis ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Low Threshold ◽

Metalorganic Chemical

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Low‐threshold high‐efficiency AlGaAs‐GaAs double‐heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.98185 ◽

1987 ◽

Vol 50 (7) ◽

pp. 407-409 ◽

Cited By ~ 38

Author(s):

R. D. Dupuis ◽

J. P. van der Ziel ◽

R. A. Logan ◽

J. M. Brown ◽

C. J. Pinzone

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

High Efficiency ◽

Chemical Vapor ◽

Double Heterostructure ◽

Si Substrates ◽

Low Threshold ◽

Injection Lasers ◽

Metalorganic Chemical

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High‐efficiency, low‐threshold, Zn‐diffused narrow stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.93042 ◽

1982 ◽

Vol 40 (3) ◽

pp. 208-210 ◽

Cited By ~ 11

Author(s):

C. S. Hong ◽

J. J. Coleman ◽

P. D. Dapkus ◽

Y. Z. Liu

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

High Efficiency ◽

Chemical Vapor ◽

Double Heterostructure ◽

Low Threshold ◽

Narrow Stripe ◽

Metalorganic Chemical

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Improvement in Photoluminescence Efficiency of GaInNAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition for Low-Threshold 1.3 µm Range Lasers

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.5262 ◽

2004 ◽

Vol 43 (8A) ◽

pp. 5262-5268 ◽

Cited By ~ 4

Author(s):

Masao Kawaguchi ◽

Tomoyuki Miyamoto ◽

Fumio Koyama

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Threshold ◽

Photoluminescence Efficiency ◽

Metalorganic Chemical

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Low‐threshold 1.3‐μm GaInAsP/InP buried heterostructure lasers by liquid phase epitaxy and metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.92697 ◽

1981 ◽

Vol 39 (3) ◽

pp. 188-189 ◽

Cited By ~ 5

Author(s):

Willie Ng ◽

C. S. Hong ◽

H. Manasevit ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Buried Heterostructure ◽

Low Threshold ◽

Metalorganic Chemical

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Single‐longitudinal‐mode metalorganic chemical‐vapor‐deposition self‐aligned GaAlAs‐GaAs double‐heterostructure lasers

Applied Physics Letters ◽

10.1063/1.91900 ◽

1980 ◽

Vol 37 (3) ◽

pp. 262-263 ◽

Cited By ~ 34

Author(s):

J. J. Coleman ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Longitudinal Mode ◽

Single Longitudinal Mode ◽

Double Heterostructure ◽

Metalorganic Chemical

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Low-Threshold-Current-Density, Long-Wavelength, Highly Strained InGaAs Laser Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.7485 ◽

2005 ◽

Vol 44 (10) ◽

pp. 7485-7487 ◽

Cited By ~ 2

Author(s):

I-Liang Chen ◽

Wei-Chou Hsu ◽

Hao-Chung Kuo ◽

Hsin-Chieh Yu ◽

Chia-Pin Sung ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Threshold Current ◽

Threshold Current Density ◽

Long Wavelength ◽

Low Threshold ◽

Highly Strained ◽

Metalorganic Chemical

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Temperature engineered growth of low‐threshold quantum well lasers by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.101242 ◽

1989 ◽

Vol 54 (2) ◽

pp. 105-107 ◽

Cited By ~ 32

Author(s):

K. M. Dzurko ◽

E. P. Menu ◽

C. A. Beyler ◽

J. S. Osinski ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Low Threshold ◽

Metalorganic Chemical

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Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.93476 ◽

1982 ◽

Vol 41 (3) ◽

pp. 228-230 ◽

Cited By ~ 45

Author(s):

R. D. Burnham ◽

D. R. Scifres ◽

W. Streifer

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

High Efficiency ◽

Diode Lasers ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold ◽

Metalorganic Chemical

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626.2‐nm pulsed operation (300 K) of an AlGaInP double heterostructure laser grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.95804 ◽

1985 ◽

Vol 46 (1) ◽

pp. 7-9 ◽

Cited By ~ 19

Author(s):

Kenichi Kobayashi ◽

Isao Hino ◽

Tohru Suzuki

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Heterostructure Laser ◽

Metalorganic Chemical

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Erratum: “Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by metalorganic chemical vapor deposition” [Appl. Phys. Lett. 68, 1072 (1996)]

Applied Physics Letters ◽

10.1063/1.120562 ◽

1997 ◽

Vol 71 (11) ◽

pp. 1585-1585

Author(s):

J. Bohrer ◽

A. Krost ◽

R. Heitz ◽

F. Heinrichsdorff ◽

L. Eckey ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Metalorganic Chemical

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