Ultrarapid crystal growth and impurity segregation in amorphous silicon annealed with shortQ‐switched laser pulses

1982 ◽  
Vol 40 (11) ◽  
pp. 998-1000 ◽  
Author(s):  
A. G. Cullis ◽  
H. C. Webber ◽  
N. G. Chew
Keyword(s):  
Crystal Growth ◽  
Amorphous Silicon ◽  
Laser Pulses ◽  
Impurity Segregation

OPTICAL LIMITING STUDIES OF NEW CARBON NANOCOMPOSITES AND AMORPHOUS SixNy OR AMORPHOUS SiC COATED MULTI-WALLED CARBON NANOTUBES

2004 ◽  
Vol 13 (02) ◽  
pp. 275-289 ◽  
Author(s):  
HENDRY IZAAC ELIM ◽  
WEIZHE CHEN ◽  
WEI JI ◽  
ZIYI ZHONG ◽  
JIANYI LIN ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Amorphous Silicon ◽  
Laser Pulses ◽  
Optical Limiting ◽  
Nanosecond Laser ◽  
Transmission Measurement ◽  
Carbon Nanocomposites ◽  
Multi Walled Carbon Nanotubes ◽  
Amorphous Sic ◽  
Walled Carbon Nanotubes

By using fluence-dependent transmission measurement with nanosecond laser pulses, we have studied optical limiting (OL) properties of new carbon nanocomposites as well as amorphous Si x N y or amorphous SiC coated carbon nanotubes suspended in distilled water. The observed nonlinearity at 532 nm contributed to OL performance of the carbon nanocomposites or carbon nanoballs (CNBs) is suggested to have its origin in the optically induced heating or scattering effects. It is found that when the linear transmittance of the CNBs is less than or equal to 70%, the intensity-dependent transmission of the CNBs is comparable to that of C 60. While at 80% linear transmittance, CNBs possess better OL behavior than that of C 60. These findings strongly support a potential application of CNBs for all laser protection devices. We have also observed OL effects in the amorphous silicon nitride ( a - Si x N y) and amorphous silicon carbide ( a - SiC ) coated multi-walled carbon nanotubes (MWNTs) at wavelengths of 532 and 1064 nm, and found that their OL performances are slightly poorer than that of their parent MWNTs. The possible sources of thickness-dependent OL effects of a - Si x N y and a - SiC coated MWNTs are discussed.

Impurity segregation during explosive crystallization of amorphous silicon

1983 ◽  
Vol 54 (6) ◽  
pp. 3485-3488 ◽  
Author(s):  
D. Bensahel ◽  
G. Auvert ◽  
A. Perio ◽  
J. C. Pfister ◽  
A. Izrael ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Impurity Segregation ◽  
Explosive Crystallization

Giant birefringence and dichroism induced by ultrafast laser pulses in hydrogenated amorphous silicon

2015 ◽  
Vol 106 (17) ◽  
pp. 171106 ◽  
Author(s):  
Rokas Drevinskas ◽  
Martynas Beresna ◽  
Mindaugas Gecevičius ◽  
Mark Khenkin ◽  
Andrey G. Kazanskii ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Laser Pulses ◽  
Ultrafast Laser ◽  
Ultrafast Laser Pulses ◽  
Hydrogenated Amorphous

A Study on the Characteristics of the Polycrystalline Silicon Annealed by the SHG Nd:YAG Laser

2011 ◽  
Vol 695 ◽  
pp. 9-12
Author(s):  
Young Chul Kim ◽  
Dae Wook Kim ◽  
Ho Seob Kim ◽  
Seong Joon Ahn ◽  
Seung Joon Ahn
Keyword(s):  
Grain Size ◽  
Thin Layer ◽  
Amorphous Silicon ◽  
Harmonic Generation ◽  
Nd:Yag Laser ◽  
Polycrystalline Silicon ◽  
Second Harmonic ◽  
Laser Pulses ◽  
Absorption Efficiency ◽  
Optical Energy

We have annealed the thin layer of the amorphous silicon (a-Si) using the Q-swtiched Nd:YAG laser pulses in order to transform the a-Si into polycrystalline silicon (poly-Si) and investigated the crystalline structures of the poly-Si. Before illuminating the light to the layer, the frequency of the laser was doubled through the second harmonic generation (SHG) process to enhance the absorption efficiency of the optical energy. When the optical energy was higher than 500 mJ/cm2, we could obtain the micro-crystalline structure with grain size as large as 500 nm.

Structural Anisotropy of Amorphous Silicon Films Modified by Femtosecond Laser Pulses

2018 ◽  
Vol 124 (6) ◽  
pp. 801-807 ◽  
Author(s):  
D. V. Shuleiko ◽  
F. V. Kashaev ◽  
F. V. Potemkin ◽  
S. V. Zabotnov ◽  
A. V. Zoteev ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Amorphous Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Silicon Films ◽  
Structural Anisotropy

scholarly journals Фемтосекундный лазерный отжиг многослойных тонкопленочных структур на основе аморфных германия и кремния

2020 ◽  
Vol 46 (11) ◽  
pp. 43
Author(s):  
А.В. Колчин ◽  
Д.В. Шулейко ◽  
А.В. Павликов ◽  
С.В. Заботнов ◽  
Л.А. Головань ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Amorphous Silicon ◽  
Laser Annealing ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Surface Structures ◽  
Multilayered Structures ◽  
Spectra Analysis ◽  
Periodic Surface ◽  
Silicon And Germanium

Femtosecond laser annealing of thin-film multilayered structures based on amorphous silicon and germanium were studied. The original samples were synthesized via plasma-enhanced deposition on glass substrate. Scanning electron microscopy revealed formation of periodic surface structures in the irradiated films. Raman spectra analysis revealed crystallization of amorphous germanium as a result of femtosecond laser pulses action, as well as fluence-dependent mixture of the germanium and silicon layers at absence of crystallization of the amorphous silicon layers.

Crystal Growth: Single-Crystal Germanium Growth on Amorphous Silicon (Adv. Funct. Mater. 5/2012)

2012 ◽  
Vol 22 (5) ◽  
pp. 1048-1048 ◽  
Author(s):  
Kevin A. McComber ◽  
Xiaoman Duan ◽  
Jifeng Liu ◽  
Jurgen Michel ◽  
Lionel C. Kimerling
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Amorphous Silicon

The Effect of an External Magnetic Field on the Impurity Distribution in an RF-FZ Silicon Crystal During the Growth Process

2000 ◽  
Author(s):  
Tetsuo Munakata ◽  
Satoshi Someya ◽  
Ichiro Tanasawa
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
External Magnetic Field ◽  
Applied Magnetic Field ◽  
Impurity Concentration ◽  
Growth Process ◽  
Silicon Crystal ◽  
Impurity Distribution ◽  
Rf Heating ◽  
Impurity Segregation

Abstract The impurity concentration distribution in a silicon crystal during the floating zone (FZ) growth process under radio-frequency (RF) heating and the effect of an externally applied magnetic field on the impurity distribution in the crystal have been investigated numerically. The main purpose of the study is to clarify the characteristics of the impurity distribution in the silicon crystal under the RF-FZ crystal growth process, and the effect of an externally applied magnetic field on such an impurity distribution. The numerically obtained characteristics on impurity distribution in the crystal are as follows. In the case of excluding the external magnetic field, impurity concentration in the crystal varies due to the fluctuation of the melt flow. If we apply an external magnetic field, such impurity variation in the crystal disappears due to the stabilizing effect of the external magnetic field. Further, the crystal growth rate is decreased, the impurity concentration in the crystal is also decreased. The impurity segregation coefficient does not affect the impurity distribution in the crystal.

Sign in / Sign up

Export Citation Format

Share Document