Impurity segregation during explosive crystallization of amorphous silicon

1983 ◽  
Vol 54 (6) ◽  
pp. 3485-3488 ◽  
Author(s):  
D. Bensahel ◽  
G. Auvert ◽  
A. Perio ◽  
J. C. Pfister ◽  
A. Izrael ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Impurity Segregation ◽  
Explosive Crystallization

Excimer Laser Amorphous Silicon Film Crystallization: A Study of Time Resolved Reflectivity Measurements

1993 ◽  
Vol 297 ◽  
Author(s):  
C. Summonte ◽  
M. Bianconi ◽  
D. Govoni
Keyword(s):  
Heat Flow ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Optical Simulation ◽  
Molten Layer ◽  
Time Resolved ◽  
Flow Calculation ◽  
Explosive Crystallization ◽  
Bulk Nucleation ◽  
Calculation Results

Time Resolved Reflectivity during XeCl pulsed laser irradiation of amorphous silicon films deposited on glass was measured. Simulation of the process by a Heat Flow Calculation in which explosive crystallization was not forced to occur, predicts the coexistence of partial bulk nucleation and a traveling molten layer. Optical simulation of Time Resolved Reflectivity was used to critically examine the Heat Flow Calculation results, substantially confirming the existence of a mixture of thermodynamical phases.

Crystallization Kinetics of Hydrogenated Amorphous Silicon During Pulsed Excimer Laser Annealing

1992 ◽  
Vol 258 ◽  
Author(s):  
S. E. Ready ◽  
J. H. Roh ◽  
J. B. Boyce ◽  
G. B. Anderson
Keyword(s):  
Amorphous Silicon ◽  
Crystallization Kinetics ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Molten Silicon ◽  
Excimer Laser Annealing ◽  
Pulsed Laser Annealing ◽  
Explosive Crystallization ◽  
Silicon Bulk ◽  
Kinetics Of

ABSTRACTExplosive crystallization of amorphous silicon (a-Si) during pulsed laser annealing occurs at an intermediate laser energy fluence above the threshold for surface melting. Mediated by a molten silicon layer which is undercooled with respect to crystalline silicon and above the melting point of a-Si, the crystallization interface drives down into the sample, sustaining itself due to the difference in the latent heats of the crystalline and amorphous silicon. Explosive crystallization has been the subject of numerous studies which have for the most part been restricted to ion implanted amorphized layers in silicon bulk samples. In this study we examine the crystallization kinetics of vapor deposited thin films of hydrogenated a-Si for films of differing hydrogen content and substrate temperature. We reevaluate current models of interface and nucleation kinetics qualitatively in light of these results. The fundamental physical mechanisms in these non-equilibrium phase transitions during pulsed laser annealing are discussed.

Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation

1984 ◽  
Vol 52 (26) ◽  
pp. 2360-2363 ◽  
Author(s):  
Michael O. Thompson ◽  
G. J. Galvin ◽  
J. W. Mayer ◽  
P. S. Peercy ◽  
J. M. Poate ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Melting Temperature ◽  
Pulsed Laser ◽  
Explosive Crystallization ◽  
Pulsed Laser Irradiation

Triggering explosive crystallization of amorphous silicon

1991 ◽  
Vol 108 (1-2) ◽  
pp. 114-120 ◽  
Author(s):  
A. Polman ◽  
S. Roorda ◽  
P.A. Stolk ◽  
W.C. Sinke
Keyword(s):  
Amorphous Silicon ◽  
Explosive Crystallization

Epitaxial explosive crystallization of amorphous silicon

1989 ◽  
Vol 55 (11) ◽  
pp. 1097-1099 ◽  
Author(s):  
A. Polman ◽  
D. J. W. Mous ◽  
P. A. Stolk ◽  
W. C. Sinke ◽  
C. W. T. Bulle‐Lieuwma ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Explosive Crystallization

Epitaxial Explosive Crystallization of Amorphous Silicon Layers Buried in a Silicon (100) and (111) Matrix

1989 ◽  
Vol 147 ◽  
Author(s):  
P. A. Stolk ◽  
A. Polman ◽  
W. C. Sinke
Keyword(s):  
Amorphous Silicon ◽  
Cross Section ◽  
Ruby Laser ◽  
Crystallization Process ◽  
Amorphous Layer ◽  
High Density ◽  
Time Resolved ◽  
Explosive Crystallization ◽  
Amorphous Si ◽  
Twin Defects

Abstract420 nm thick amorphous Si layers buried in a Si (100) or Si (111) matrix, produced by 350 keV Si-implantation, were irradiated using a pulsed ruby laser. Time-resolved reflectivity measurements show that melting can be initiated buried in the samples at the crystalline-amorphous interface. Melting is immediately followed by explosive crystallization of the buried amorphous layer, which is started from the crystalline top layer. The velocity of this self-sustained crystallization process is determined to be 15.0 ± 0.5 m/s for Si (100) and 14.0 ± 0.5 m/s for Si (111). RBS and cross-section TEM reveal that epitaxially grown crystalline Si, containing a high density of twin defects, is formed in both the Si (100) and the Si (111) sample.

Time‐resolved reflectivity measurements during explosive crystallization of amorphous silicon

1986 ◽  
Vol 49 (18) ◽  
pp. 1160-1162 ◽  
Author(s):  
J. J. P. Bruines ◽  
R. P. M. van Hal ◽  
H. M. J. Boots ◽  
A. Polman ◽  
F. W. Saris
Keyword(s):  
Amorphous Silicon ◽  
Time Resolved ◽  
Explosive Crystallization
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