Giant birefringence and dichroism induced by ultrafast laser pulses in hydrogenated amorphous silicon

2015 ◽  
Vol 106 (17) ◽  
pp. 171106 ◽  
Author(s):  
Rokas Drevinskas ◽  
Martynas Beresna ◽  
Mindaugas Gecevičius ◽  
Mark Khenkin ◽  
Andrey G. Kazanskii ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Laser Pulses ◽  
Ultrafast Laser ◽  
Ultrafast Laser Pulses ◽  
Hydrogenated Amorphous

Polarized Electroabsorption in Pulse and Continuous Light-Soaked a-Si:H - Structural Change other than Defect Creation

1997 ◽  
Vol 467 ◽  
Author(s):  
H. Hata ◽  
T. Kamei ◽  
H. Okamoto ◽  
A. Matsuda
Keyword(s):  
Structural Change ◽  
Amorphous Silicon ◽  
Annealing Time ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Continuous Light ◽  
Laser Pulses ◽  
Defect Creation ◽  
Short Time ◽  
Hydrogenated Amorphous

ABSTRACTExperimental results on structural change other than defect creation upon light-soaking of hydrogenated amorphous silicon (a-Si:H) are reported. A-Si:H films were light-soaked with laser pulses or with continuous (cw) light to steady-states, and then annealed at 170 °C in vacuum. The changes in electro-absorption (EA) signal, and defect density (Nd) from subgap absorption were measured as functions of light-soaking/annealing time. The results are: (1) EA ratio, which is defined as the ratio of anisotropie to isotropie components in EA signal, increases upon light-soaking with a time constant shorter by almost two orders of magnitude than that for Nd increase, and (2) shows saturation when extensively light-soaked. (3) The saturated values of EA ratio are comparable for both pulsed and cw light-soaking. (4) Both the EA ratio and Nd show recovery to the values in the annealed states. It is suggested that light-soaking causes a structural change in a short time, as manifested by EA ratio, and this changed structure works as the pathway leading to the defect creation. Thermal annealing is also discussed.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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