GaAs‐oxide interface states: A gigantic photoionization effect and its implications to the origin of these states

1981 ◽  
Vol 39 (3) ◽  
pp. 240-242 ◽  
Author(s):  
J. Lagowski ◽  
W. Walukiewicz ◽  
T. E. Kazior ◽  
H. C. Gatos ◽  
J. Siejka
Keyword(s):  
Interface States ◽  
Oxide Interface

SiC/SiO2 Interface States: Properties and Models

2005 ◽  
Vol 483-485 ◽  
pp. 563-568 ◽  
Author(s):  
Valeri V. Afanas'ev ◽  
Florin Ciobanu ◽  
Sima Dimitrijev ◽  
Gerhard Pensl ◽  
Andre Stesmans
Keyword(s):  
Cluster Model ◽  
Elemental Carbon ◽  
Defect Density ◽  
Energy Levels ◽  
Carbon Cluster ◽  
Interface States ◽  
Dangling Bond ◽  
Oxide Interface ◽  
The Past ◽  
Density Of Interface States

Properties of defects encountered at the oxidized surfaces of silicon carbide (SiC) suggest their origin to be different from the dangling-bond-type defects commonly observed in the oxidized silicon. Among different models of these SiC/oxide interface states advanced during the past decade, two have received substantial experimental support. This first one is the “carbon cluster” model, which ascribes the traps with energy levels in the SiC bandgap to inclusions of elemental carbon formed during the SiC surface treatment and subsequent oxidation. The second model invokes intrinsic defects of SiO2 to account for the high density of interface states in the energy range close to the conduction band of SiC. Achievements in reducing the SiC/SiO2 defect density are discussed.

Theory of GaAsoxide interface states

1983 ◽  
Vol 45 (4) ◽  
pp. 379-381 ◽  
Author(s):  
R.E. Allen ◽  
J.D. Low
Keyword(s):  
Interface States ◽  
Oxide Interface

Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States

1980 ◽  
Vol 44 (6) ◽  
pp. 420-423 ◽  
Author(s):  
W. E. Spicer ◽  
I. Lindau ◽  
P. Skeath ◽  
C. Y. Su ◽  
Patrick Chye
Keyword(s):  
Schottky Barrier ◽  
Interface States ◽  
Oxide Interface ◽  
Barrier Formation

GaAs–oxide interface states: Gigantic photoionization via Auger‐like process

1981 ◽  
Vol 19 (3) ◽  
pp. 519-524 ◽  
Author(s):  
J. Lagowski ◽  
T. E. Kazior ◽  
W. Walukiewicz ◽  
H. C. Gatos ◽  
J. Siejka
Keyword(s):  
Interface States ◽  
Oxide Interface

Influence of Interface States on High Temperature SiC Sensors and Electronics

2002 ◽  
Vol 742 ◽  
Author(s):  
Ruby N. Ghosh ◽  
Peter Tobias ◽  
Brage Golding
Keyword(s):  
High Temperature ◽  
Metal Oxide ◽  
Interface States ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Oxide Interface ◽  
Voltage Range ◽  
Mos Devices ◽  
Work Function Difference ◽  
Induced Changes

ABSTRACTSilicon carbide based metal/oxide/semiconductor (MOS) devices are well suited for operation in chemically reactive high temperature ambients. The response of catalytic gate SiC MOS sensors to hydrogen-containing species has been assumed to be due to the formation of a dipole layer at the metal/oxide interface, which gives rise to a voltage translation of the high frequency capacitance voltage (C-V) curve. From in-situ C-V spectroscopy, performed in a controlled gaseous environment, we have discovered that high temperature (800 K) exposure to hydrogen results in (i) a flat band voltage occurring at a more negative bias than in oxygen and (ii) the transition from accumulation to inversion occurring over a relatively narrow voltage range. In oxygen, this transition is broadened indicating the creation of a large number of interface states. We interpret these results as arising from two independent phenomena – a chemically induced shift in the metal/semiconductor work function difference and the passivation/creation of charged states (DIT) at the SiO2/SiC interface. Our results are important for both chemical sensing and electronic applications. MOS capacitance gas sensors typically operate in constant capacitance mode. Since the slope of the C-V curve changes dramatically with gas exposure, we discuss how sensor-to-sensor reproducibility and device response time are influenced by the choice of operating point. For electronic applications understanding the environmentally induced changes in DIT is crucial to designing drift-free MOS devices. Our results are applicable to n-type SiC MOS devices in general, independent of the specifics of sample fabrication.

Sign in / Sign up

Export Citation Format

Share Document