Temperature sensitivity of prism coupling to lithium niobate optical waveguides

1981 ◽  
Vol 38 (6) ◽  
pp. 409-412 ◽  
Author(s):  
R. L. Holman ◽  
P. J. Cressman
Keyword(s):  
Lithium Niobate ◽  
Temperature Sensitivity ◽  
Optical Waveguides ◽  
Prism Coupling

Fabrication and Characterisation of Reverse Proton Exchange Optical Waveguides in Neodymium Doped Lithium Niobate Crystals

2005 ◽  
Vol 480-481 ◽  
pp. 429-436
Author(s):  
M. Domenech ◽  
G. Lifante ◽  
F. Cussó ◽  
A. Parisi ◽  
A.C. Cino ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Optical Waveguides ◽  
Spectroscopic Properties ◽  
Proton Exchange ◽  
Fabrication Process ◽  
The Other ◽  
Ion Plating ◽  
Other Hand ◽  
Channel Waveguides ◽  
Lithium Niobate Crystals

In this work, the complete fabrication process which combines Proton Exchange (PE) and Reverse Proton Exchange (RPE) in Neodymium doped LiNbO3 channel waveguides is reported. To produce the PE-RPE channel waveguides the fabrication of dielectric SiO2 masks had to be implemented. For this propose, we adopted a technique based on the Ion Plating Plasma Assisted Deposition of SiO2 followed by the standard ultraviolet photolithographic patterning. On the other hand, we determined the main optical and spectroscopic properties of Nd3+ ions in the channel waveguides including the study of the lifetime as function as the polarisation.

On comparison of the temperature sensitivity of SU-8-based triple-arm MZI against straight rib optical waveguides patterned on silicon wafer

2018 ◽  
Vol 93 (3) ◽  
pp. 385-391
Author(s):  
I. S. Amiri ◽  
M. M. Ariannejad ◽  
M. Ghasemi ◽  
A. Dehzangi ◽  
H. Ahmad ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Temperature Sensitivity ◽  
Optical Waveguides

Chromium diffusion in lithium niobate for active optical waveguides

1995 ◽  
Vol 78 (4) ◽  
pp. 2193-2197 ◽  
Author(s):  
José M. Almeida ◽  
Gerard Boyle ◽  
António P. Leite ◽  
Richard M. De La Rue ◽  
Charles N. Ironside ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Optical Waveguides ◽  
Chromium Diffusion

Optical Waveguides in Thermally Grown SiO2 on Si Using Nitrogen Ion Implantation

1991 ◽  
Vol 244 ◽  
Author(s):  
S. P. Wong ◽  
E. Y. B. Pun ◽  
W. T. Lam ◽  
P. S. Chung
Keyword(s):  
Optical Waveguides ◽  
Nitrogen Concentration ◽  
Silicon Substrates ◽  
Optical Wave ◽  
Implantation Energy ◽  
Coupling Technique ◽  
Waveguide Loss ◽  
Prism Coupling ◽  
Nitrogen Ion ◽  
Thermally Grown

ABSTRACTMulti-energy nitrogen implantation into thermally grown SiO2 on silicon substrates has been performed and the optical wave-guiding properties of this structure has been studied. The implantation energy used was in Ie range of 40 KeV to 150 keV, and the doses used were typically 2×1016 to 2×10−2. The energies and doses were chosen to achieve relatively flat implanted nitrogen profiles. It is found that optical waveguides can be formed when the implanted nitrogen concentration is sufficiently high. Both prism-coupling technique and end-fire coupling technique were used to test the implanted waveguides fabricated. Many m-lines including dark modes were observed by the prism-coupling method. This structure is found to be very stable against thermal annealing and there is no significant change observed in the waveguiding properties even after annealing at 1000 °C for four hours. The waveguide loss was found to be typically 0.6 dB/cm before annealing and can be further reduced to about 0.3 dB/cm after annealing.

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