Reduction of threading dislocations in iso‐epitaxial layers grown on (001) InP substrates by misfit stresses

1981 ◽  
Vol 38 (10) ◽  
pp. 766-768 ◽  
Author(s):  
S. N. G. Chu ◽  
S. Mahajan ◽  
K. E. Strege ◽  
W. D. Johnston ◽  
A. A. Ballman
Keyword(s):  
Epitaxial Layers ◽  
Threading Dislocations ◽  
Inp Substrates

Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers

2008 ◽  
Vol 600-603 ◽  
pp. 345-348 ◽  
Author(s):  
Kendrick X. Liu ◽  
X. Zhang ◽  
Robert E. Stahlbush ◽  
Marek Skowronski ◽  
Joshua D. Caldwell
Keyword(s):  
Spectral Characteristics ◽  
Emission Spectra ◽  
Spectral Peak ◽  
Epitaxial Layers ◽  
Threading Dislocations ◽  
Screw Dislocations ◽  
Material Defects ◽  
Partial Dislocations ◽  
Edge Dislocations ◽  
Non Destructive

Material defects such as Si-core and C-core partial dislocations (PDs) and threading screw dislocations (TSDs) and threading edge dislocations (TEDs) are being investigated for their contributions to device performances in 4H-SiC. Non-destructive electroluminescence and photoluminescence techniques can be powerful tools for examining these dislocations. In this report, these techniques were used to reveal the different spectral characteristics for the mentioned dislocations. At higher injection levels, both the Si-core and C-core PDs possessed a spectral peak at 700 nm. However, at lower injection levels, the spectral peak for the Si-core PD remained at 700 nm while the peak for the C-core moved to longer wavelengths. For the threading dislocations, TSDs possessed a peak between 800 and 850 nm while the TEDs possessed a peak at 600 nm independent of the injection levels.

Defect Characterization of InAs Films Grown by Two-Step MOCVD on (100) InP Substrates

1992 ◽  
Vol 280 ◽  
Author(s):  
A. K. Ballal ◽  
L. Salamanca-Riba ◽  
D. L. Partin
Keyword(s):  
Electron Microscopy ◽  
Lattice Mismatch ◽  
Misfit Strain ◽  
Organic Chemical ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Plan View ◽  
Inp Substrates

ABSTRACTIn this paper we investigate the defect morphology and misfit strain in InAs films grown on (100) InP substrates using two-step metal organic chemical vapor deposition (MOCVD). High quality InAs films were obtained despite the 3.2% lattice-mismatch between the InAs film and the InP substrate. Cross-sectional and plan-view transmission electron microscopy has been used to characterize the ∼3μm thick InAs films. Almost all the lattice mismatch is accomodated by an orthogonal array of pure edge Lomer dislocations which are favored over the 60° type since they are more efficient in relieving misfit strain. In addition to misfit dislocations, threading dislocations were observed propagating through the film. Most of the threading dislocations were 60° type dislocations along the < 211 > and < 110 > directions on inclined {111} planes. The threading dislocations originate from island coalescence during film growth. High resolution electron microscopy shows the epitaxial relationship between the film and the substrate and reveals an abrupt and sharp interface with periodic dislocation cores.

Characteristics of growth and radiative recombination of epitaxial layers InAsxP1?x(0

1990 ◽  
Vol 52 (1) ◽  
pp. 93-96
Author(s):  
V. A. Bykovskii ◽  
S. A. Manego ◽  
V. I. Osinskii
Keyword(s):  
Gas Phase ◽  
Radiative Recombination ◽  
Epitaxial Layers ◽  
Inp Substrates

Lattice defects in LPE InPInGaAsPInGaAs structure epitaxial layers on InP substrates

1982 ◽  
Vol 70 (1) ◽  
pp. 277-286 ◽  
Author(s):  
K. Ishida ◽  
Y. Matsumoto ◽  
K. Taguchi
Keyword(s):  
Lattice Defects ◽  
Epitaxial Layers ◽  
Inp Substrates

Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates

2016 ◽  
Vol 453 ◽  
pp. 180-187 ◽  
Author(s):  
Y. Bogumilowicz ◽  
J.M. Hartmann ◽  
N. Rochat ◽  
A. Salaun ◽  
M. Martin ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Threading Dislocations ◽  
Si Substrates
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