Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes

1980 ◽  
Vol 36 (1) ◽  
pp. 19-21 ◽  
Author(s):  
R. Chin ◽  
N. Holonyak ◽  
B. A. Vojak ◽  
K. Hess ◽  
R. D. Dupuis ◽  
...  
Keyword(s):  
Quantum Well ◽  
Temperature Dependence ◽  
Laser Diodes ◽  
Threshold Current ◽  
Heterostructure Laser

Temperature dependence of threshold current for a quantum-well heterostructure laser

1980 ◽  
Vol 23 (6) ◽  
pp. 585-589 ◽  
Author(s):  
K. Hess ◽  
B.A. Vojak ◽  
N. Holonyak ◽  
R. Chin ◽  
P.D. Dapkus
Keyword(s):  
Quantum Well ◽  
Temperature Dependence ◽  
Threshold Current ◽  
Heterostructure Laser

Temperature dependence of the threshold current for InGaAlP visible laser diodes

1991 ◽  
Vol 27 (1) ◽  
pp. 23-29 ◽  
Author(s):  
M. Ishikawa ◽  
H. Shiozawa ◽  
K. Itaya ◽  
G.-I. Hatakoshi ◽  
Y. Uematsu
Keyword(s):  
Temperature Dependence ◽  
Laser Diodes ◽  
Threshold Current ◽  
Visible Laser

Cavity Parameters of ZnCdSe/ZnSe Single-Quantum-Well Separate-Confinement-Heterostructure Laser Diodes

1993 ◽  
Vol 32 (Part 2, No. 12A) ◽  
pp. L1750-L1752 ◽  
Author(s):  
Ayumu Tsujimura ◽  
Shigeo Yoshii ◽  
Shigeo Hayashi ◽  
Kazuhiro Ohkawa ◽  
Tsuneo Mitsuyu
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Heterostructure Laser

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Native‐oxide coupled‐cavity AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes

1991 ◽  
Vol 59 (22) ◽  
pp. 2838-2840 ◽  
Author(s):  
N. El‐Zein ◽  
F. A. Kish ◽  
N. Holonyak ◽  
A. R. Sugg ◽  
M. J. Ries ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Native Oxide ◽  
Heterostructure Laser ◽  
Coupled Cavity

Experimental study on the mechanism governing spectral shifts in low power 670 nm AlGaInP multiple quantum well (MQW) laser diodes over temperature range 5–45 °C

2016 ◽  
Vol 94 (7) ◽  
pp. 640-644 ◽  
Author(s):  
Santosh Chackrabarti ◽  
Dhrub Sharma ◽  
Shereena Joseph ◽  
Tho-alfiqar A. Zaker ◽  
A.K. Hafiz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Low Power ◽  
Band Gap ◽  
Characteristic Temperature ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Spectral Shifts ◽  
Band Gap Narrowing

We report on the temperature-dependent spectral shifts in low power 670 nm AlGaInP multiple quantum well red laser diodes due to band gap narrowing at room temperatures (5–45 °C). The spectral shift mechanism is explored with a threshold current density of 11.41 kA/cm2 and a good characteristic temperature of 114 K. The photoluminescence peak intensity shifts towards higher wavelengths and the full width at half maximum increases with increase in temperature from 5 to 45 °C. We use a Hamiltonian system considering the effective mass approximation to formulate the carrier concentrations. The band gap narrowing value determined by a simple formula amounts to 59.15 meV and displays N1/3 dependence at higher densities. The carrier density dependence conveys that the redshift of the spectral emission is due to band gap narrowing.

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