200-A/cm/sup 2/ threshold current density 1.5- mu m GaInAs/AlGaInAs strained-layer GRIN-SCH quantum-well laser diodes grown by OMCVD

1991 ◽  
Vol 38 (12) ◽  
pp. 2690
Author(s):  
A. Kasukawa ◽  
R. Bhat ◽  
C.E. Zah ◽  
M.A. Koza ◽  
S.A. Schwarz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Strained Layer ◽  
Quantum Well Laser

Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
Monica Hansen ◽  
Paul Fini ◽  
Lijie Zhao ◽  
Amber Abare ◽  
Larry A. Coldren ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Internal Quantum Efficiency ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Laser ◽  
Low Dislocation Density ◽  
Multi Quantum Well ◽  
Improved Characteristics

AbstractInGaN multi-quantum-well laser diodes have been fabricated on fully-coalesced laterally epitaxially overgrown (LEO) GaN on sapphire. The laterally overgrown ‘wing’ regions as well as the coalescence fronts contained few or no threading dislocations. Laser diodes fabricated on the low-dislocation-density wing regions showed a reduction in threshold current density from 8 kA/cm2 to 3.7 kA/cm2 compared the those on the high-dislocation ‘window’ regions. Laser diodes also showed a twofold reduction in threshold current density when comparing those on the wing regions to those fabricated on conventional planar GaN on sapphire. The internal quantum efficiency also improved from 3% for laser diodes on conventional GaN on sapphire to 22% for laser diodes on LEO GaN on sapphire.

scholarly journals Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire

2000 ◽  
Vol 5 (S1) ◽  
pp. 8-13
Author(s):  
Monica Hansen ◽  
Paul Fini ◽  
Lijie Zhao ◽  
Amber Abare ◽  
Larry A. Coldren ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Internal Quantum Efficiency ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Laser ◽  
Low Dislocation Density ◽  
Fold Reduction ◽  
Multi Quantum Well

InGaN multi-quantum-well laser diodes have been fabricated on fully-coalesced laterally epitaxially overgrown (LEO) GaN on sapphire. The laterally overgrown ‘wing’ regions as well as the coalescence fronts contained few or no threading dislocations. Laser diodes fabricated on the low-dislocation-density wing regions showed a reduction in threshold current density from 8 kA/cm2 to 3.7 kA/cm2 compared the those on the high-dislocation ‘window’ regions. Laser diodes also showed a two-fold reduction in threshold current density when comparing those on the wing regions to those fabricated on conventional planar GaN on sapphire. The internal quantum efficiency also improved from 3% for laser diodes on conventional GaN on sapphire to 22% for laser diodes on LEO GaN on sapphire.

Low threshold current density 1.3 [micro sign]m metamorphic InGaAs/GaAs quantum well laser diodes

2008 ◽  
Vol 44 (7) ◽  
pp. 474 ◽  
Author(s):  
D. Wu ◽  
H. Wang ◽  
B. Wu ◽  
H. Ni ◽  
S. Huang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Laser ◽  
Low Threshold

Extremely low threshold current density InGaAs/GaAs/AIGaAs strained SQW laser grown by MBE with As2

1996 ◽  
Vol 74 (S1) ◽  
pp. 1-4 ◽  
Author(s):  
M. Dion ◽  
Z. R. Wasilewski ◽  
F. Chatenoud ◽  
V. K. Gupta ◽  
A. R. Pratt ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Single Quantum Well ◽  
Graded Index ◽  
Quantum Well Laser ◽  
Gaas Barrier ◽  
Low Threshold ◽  
Cladding Layers

In this report, we present data on an InGaAs/GaAs strained single quantum well laser with the lowest reported threshold current density to date, namely 44 A cm−2 for a 3 mm cavity length. This was grown by solid-source molecular-beam epitaxy with the arsenic dimer, As2. The structure is that of a graded-index, separate-confinement heterostructure with a single strained InGaAs quantum well, sandwiched between GaAs barrier layers and AlGaAs cladding layers. The wavelength of the lasers was around 985 nm, and the internal efficiency and losses were 69% and 0.70 cm−1, respectively. In addition, data on the uniformity of our lasers, which are grown on rotating 2 in substrates (1 in = 2.54 cm), show drops in photoluminescence emission wavelength and layer thickness of less than 4 nm and 4%, respectively, from the centre to the edge of the wafer and very little compositional change.

InGaN/GaN/AlGaN-Based Leds and Laser Diodes

1998 ◽  
Vol 537 ◽  
Author(s):  
S. Nakamura ◽  
M. Senoh ◽  
S. Nagahama ◽  
N. Iwasa ◽  
T. Matushita ◽  
...  
Keyword(s):  
Quantum Well ◽  
Leakage Current ◽  
Output Power ◽  
Current Density ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Nonradiative Recombination ◽  
Window Region ◽  
Recombination Centers

AbstractInGaN quantum-well-structure blue LEDs were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The output power of both LEDs was as high as 6 mW at a current of 20 mA. The LED on sapphire had a considerable amount of leakage current in comparison with that on ELOG. These results indicate that In composition fluctuation is not caused by threading dislocations (TDs), free carriers are captured by radiative recombination centers before they are captured by nonradiative recombination centers in InGaN, and that the dislocations form the leakage current pathway in InGaN. Red LED with an emission peak wavelength of 650 nm was fabricated by increasing the In composition and thickness of InGaN well layer. When the laser diodes (LD) was formed on the GaN layer above the SiO2 mask region, the threshold current density was as low as 3 kAcm-2. When the LD was formed on the window region, the threshold current density was as high as 6 to 9 kAcm-2. There is a possibility that a leakage current due to a large number of TDs caused the high threshold current density on the window region. InGaN multi-quantum-well (MQW) structure LDs grown on the ELOG substrate showed an output power as high as 420 mW under RT-CW operation. The longest lifetime of 9,800 hours at a constant output power of 2 mW was achieved. The InGaN MQW LDs were fabricated on a GaN substrate. The fundamental transverse mode was observed up to an output power of 80 mW.

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