Temperature dependence of threshold current for coupled multiple quantum-well In1−xGax P1−zAsz-InP heterostructure laser diodes

1980 ◽  
Vol 51 (5) ◽  
pp. 2402 ◽  
Author(s):  
E. A. Rezek ◽  
N. Holonyak ◽  
B. K. Fuller
Keyword(s):  
Quantum Well ◽  
Temperature Dependence ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Heterostructure Laser

Experimental study on the mechanism governing spectral shifts in low power 670 nm AlGaInP multiple quantum well (MQW) laser diodes over temperature range 5–45 °C

2016 ◽  
Vol 94 (7) ◽  
pp. 640-644 ◽  
Author(s):  
Santosh Chackrabarti ◽  
Dhrub Sharma ◽  
Shereena Joseph ◽  
Tho-alfiqar A. Zaker ◽  
A.K. Hafiz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Low Power ◽  
Band Gap ◽  
Characteristic Temperature ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Spectral Shifts ◽  
Band Gap Narrowing

We report on the temperature-dependent spectral shifts in low power 670 nm AlGaInP multiple quantum well red laser diodes due to band gap narrowing at room temperatures (5–45 °C). The spectral shift mechanism is explored with a threshold current density of 11.41 kA/cm2 and a good characteristic temperature of 114 K. The photoluminescence peak intensity shifts towards higher wavelengths and the full width at half maximum increases with increase in temperature from 5 to 45 °C. We use a Hamiltonian system considering the effective mass approximation to formulate the carrier concentrations. The band gap narrowing value determined by a simple formula amounts to 59.15 meV and displays N1/3 dependence at higher densities. The carrier density dependence conveys that the redshift of the spectral emission is due to band gap narrowing.

High-Performance Strain-Compensated Multiple Quantum Well Planar Buried Heterostructure Laser Diodes with Low Leakage Current

1996 ◽  
Vol 35 (Part 1, No. 3) ◽  
pp. 1751-1757 ◽  
Author(s):  
Ho Sung Cho ◽  
Dong Hoon Jang ◽  
Jung Kee Lee ◽  
Kyung Hyun Park ◽  
Jeong Soo Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Leakage Current ◽  
High Performance ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Low Leakage ◽  
Heterostructure Laser ◽  
Low Leakage Current ◽  
Buried Heterostructure

scholarly journals Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD

1997 ◽  
Vol 2 ◽  
Author(s):  
M.P. Mack ◽  
A. Abare ◽  
M. Aizcorbe ◽  
Peter Kozodoy ◽  
S. Keller ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Threshold Current ◽  
Blue Laser ◽  
Field Pattern ◽  
Multiple Quantum ◽  
Current Densities ◽  
Far Field Pattern ◽  
Multi Quantum Well

Room temperature (RT) pulsed operation of blue (420 nm) nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates with lifetimes exceeding 6 hours have been demonstrated. Threshold current densities as low as 12.7 kA/cm2 were observed for 10×1200 μm lasers with uncoated reactive ion etched (RIE) facets. The emission is strongly TE polarized and has a sharp transition in the far field pattern above threshold.

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