Measurement of minority‐carrier lifetime in GaAs using the transient response of MOS capacitors

1979 ◽  
Vol 34 (1) ◽  
pp. 106-108 ◽  
Author(s):  
G. Vitale ◽  
E. E. Crisman ◽  
J. J. Loferski ◽  
B. Roessler
Keyword(s):  
Transient Response ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Mos Capacitors

Eluding Metal Contamination in CMOS Front-End Fabrication by Nanocrystal Formation Process

2001 ◽  
Vol 686 ◽  
Author(s):  
Zengtao Liu ◽  
Chungho Lee ◽  
Gen Pei ◽  
Venkat Narayanan ◽  
Edwin C. Kan
Keyword(s):  
Formation Process ◽  
Metal Contamination ◽  
Metal Film ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Thin Metal Film ◽  
Thin Metal ◽  
Mos Capacitors ◽  
Nanocrystal Formation

AbstractA technique to form metal nanocrystals on silicon or thin SiO2 film by Rapid Thermal Annealing (RTA) of thin metal film is developed and integrated into standard CMOS processing to make EEPROM devices and improve metal-semiconductor contact resistance. I-V and C-V measurements are carried out on MOSFETs and MOS capacitors containing Au, Ag, Pt, and Si nanocrystals as floating gate for universal mobility and minority carrier lifetime extraction. Mobility around 300 cm2/V-sec and minority carrier lifetime within 0.02 ∼ 0.1 μsec are observed for all cases including the control samples that do not go through the metal nanocrystal formation process, which suggests that the substrate is virtually free from metal contamination. Using this technique, thicker metal film can potentially be achieved as well by stitching thin metal layers on top of the nanocrystals.

Eluding Metal Contamination in CMOS Front-End Fabrication by Nanocrystal Formation Process

2001 ◽  
Vol 707 ◽  
Author(s):  
Zengtao Liu ◽  
Chungho Lee ◽  
Gen Pei ◽  
Venkat Narayanan ◽  
Edwin C. Kan
Keyword(s):  
Formation Process ◽  
Metal Contamination ◽  
Metal Film ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Thin Metal Film ◽  
Thin Metal ◽  
Mos Capacitors ◽  
Nanocrystal Formation

AbstractA technique to form metal nanocrystals on silicon or thin SiO2 film by Rapid Thermal Annealing (RTA) of thin metal film is developed and integrated into standard CMOS processing to make EEPROM devices and improve metal-semiconductor contact resistance. I-V and C-V measurements are carried out on MOSFETs and MOS capacitors containing Au, Ag, Pt, and Si nanocrystals as floating gate for universal mobility and minority carrier lifetime extraction. Mobility around 300 cm2/V-sec and minority carrier lifetime within 0.02 ∼ 0.1 μsec are observed for all cases including the control samples that do not go through the metal nanocrystal formation process, which suggests that the substrate is virtually free from metal contamination. Using this technique, thicker metal film can potentially be achieved as well by stitching thin metal layers on top of the nanocrystals.

Interaction Between Deposited Film Extrinsic Gettering and Intrinsic Gettering in CZ Silicon During Simulated CMOS Process Cycles

1985 ◽  
Vol 59 ◽  
Author(s):  
S. Hahn ◽  
C.-C. D. Wong ◽  
F. A. Ponce ◽  
Z. U. Rek
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Gate Oxide ◽  
Cmos Process ◽  
Mos Capacitors ◽  
Oxide Breakdown ◽  
Deposited Film

ABSTRACTThe gettering effectiveness of various thin film structures on n-type CZ silicon wafers has been investigated using electron microscopy, synchrotron radiation topography and optical techniques. Polysilicon, silicon nitride, and poly/nitride films were deposited on etched wafer backsurfaces. The various materials characteristics were correlated with gate oxide breakdown voltage, minority carrier lifetime and yield of MOS capacitors. These studies show that the poly/nitride configuration is superior as a gettering technique.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission
Sign in / Sign up

Export Citation Format

Share Document