Microscale degradation in (GaAl)As double‐heterostructure diode lasers

1977 ◽  
Vol 31 (9) ◽  
pp. 588-590 ◽  
Author(s):  
Daisuke Kato
Keyword(s):  
Diode Lasers ◽  
Double Heterostructure

PbS(1−x)Sex single and double heterostructure diode lasers

1974 ◽  
Author(s):  
K. J. Sleger ◽  
G. F. McLane ◽  
U. Strom
Keyword(s):  
Diode Lasers ◽  
Double Heterostructure

Liquid phase epitaxy grown PbSnSeTe/PbSe double heterostructure diode lasers

1996 ◽  
Vol 37 (4) ◽  
pp. 439-443 ◽  
Author(s):  
Z. Feit ◽  
J. Fuchs ◽  
D. Kostyk ◽  
W. Jalenak
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Diode Lasers ◽  
Double Heterostructure

GaAs/AlGaAs Diode Lasers on Monolithic GaAs/Si Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
T. H. Windhorn ◽  
G. W. Turner ◽  
G. M. Metze
Keyword(s):  
Active Region ◽  
Diode Lasers ◽  
Si Substrate ◽  
Mole Percent ◽  
Double Heterostructure ◽  
Graded Index ◽  
Si Substrates ◽  
Stripe Width ◽  
Power Outputs ◽  
P Type

ABSTRACTOne approach to the development of optical interconnects between Si systems utilizes diode lasers fabricated in III-V epitaxial layers grown on Si wafers. We have fabricated double-heterostructure lasers in GaAs/AlGaAs layers grown on a Ge-coated Si substrate, and both asymmetric largeoptical- cavity (LOC) lasers and graded-index, separate-confinement heterostructure (GRIN-SCH) lasers in such layers grown directly on a Si substrate. The GaAs/AlGaAs layers were grown by molecular beam epitaxy on (100) p-Si substrates. Si and Be were used as the n- and p-type dopants, respectively. Oxide-defined stripe-geometry devices, 300 μm long, were fabricated using standard AuSn and CrAu metallizations for the n- and ptype contacts, respectively. The laser facets were formed by ion-beamassisted etching. The double-heterostructure devices (8 μm stripe width), in which the active region contained about 10 mole percent AlAs, were evaluated using pulsed bias at 77 K. They produced power outputs up to 3.3 mW per facet and exhibited thresholds as low as 170 mA. The LOC devices (4 μm stripe width), which had a GaAs active region, were characterized using pulsed bias at 300 K. These devices produced power outputs up to 27 mW per facet. The lowest threshold was 775 mA. The GRIN-SCH devices (4 μm stripe width), which incorporated a 70 Å GaAs quantum well active layer, were also characterized using pulsed bias at 300 K. These devices were not operated at power outputs above −5 mW. Their lowest threshold was 220 mA.

scholarly journals GaAs–Ga1−xAlxAs double‐heterostructure distributed‐feedback diode lasers

1974 ◽  
Vol 25 (9) ◽  
pp. 487-488 ◽  
Author(s):  
M. Nakamura ◽  
K. Aiki ◽  
Jun‐ichi Umeda ◽  
A. Yariv ◽  
H. W. Yen ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Distributed Feedback ◽  
Double Heterostructure

Infrared double‐heterostructure diode lasers made by molecular beam epitaxy of Pb1−xEuxSe

1988 ◽  
Vol 53 (23) ◽  
pp. 2260-2262 ◽  
Author(s):  
M. Tacke ◽  
Beate Spanger ◽  
A. Lambrecht ◽  
P. R. Norton ◽  
H. Böttner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Diode Lasers ◽  
Double Heterostructure
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