scholarly journals Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy

2007 ◽  
Vol 91 (10) ◽  
pp. 101104 ◽  
Author(s):  
M. Yin ◽  
A. Krier ◽  
R. Jones ◽  
P. J. Carrington
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Diode Lasers ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Absorption Loss ◽  
Double Heterostructure ◽  
Carrier Absorption

Free Carrier Absorption Loss of p-i-n Silicon-On-Insulator (SOI) Phase Modulator

2011 ◽  
Author(s):  
H. Hazura ◽  
A. R. Hanim ◽  
B. Mardiana ◽  
Sahbudin Shaari ◽  
P. S. Menon ◽  
...  
Keyword(s):  
Free Carrier ◽  
Silicon On Insulator ◽  
Phase Modulator ◽  
Free Carrier Absorption ◽  
Absorption Loss ◽  
Carrier Absorption

Liquid phase epitaxy grown PbSnSeTe/PbSe double heterostructure diode lasers

1996 ◽  
Vol 37 (4) ◽  
pp. 439-443 ◽  
Author(s):  
Z. Feit ◽  
J. Fuchs ◽  
D. Kostyk ◽  
W. Jalenak
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Diode Lasers ◽  
Double Heterostructure

Mitigation of Si nanocrystal free carrier absorption loss at 15 μm in a concentric microdisk structure

2010 ◽  
Vol 35 (13) ◽  
pp. 2182 ◽  
Author(s):  
Elton Marchena ◽  
Brandon Redding ◽  
Tim Creazzo ◽  
Dennis W. Prather
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Absorption Loss ◽  
Si Nanocrystal ◽  
Carrier Absorption

Free Carrier Absorption Loss of Optical Phase Modulator

2012 ◽  
Vol 545 ◽  
pp. 355-358
Author(s):  
Hanim Abdul Razak ◽  
Hazura Haroon ◽  
Mardiana Bidin ◽  
P. Susthitha Menon ◽  
Sahbudin Shaari
Keyword(s):  
Applied Voltage ◽  
Ridge Waveguide ◽  
Free Carrier ◽  
Phase Modulator ◽  
Device Performance ◽  
Free Carrier Absorption ◽  
Absorption Loss ◽  
Electrical Device ◽  
Carrier Absorption ◽  
Simulation Results

The effect of the free carrier absorption loss on the split-ridge waveguide based phase modulator is analyzed at 1.3 and 1.55 µm. The electrical device performance is predicted using the 2-D semiconductor package SILVACO software under DC operation. Based on the simulation results, it is shown that there is a penalty of increased free carrier absorption as the injected electrons and holes are getting higher. Meanwhile, the loss of the device at 1.3 µm is smaller than that of 1.55 µm at an equal applied voltage.

scholarly journals The theoretical direct-band-gap optical gain of Germanium nanowires

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Wen Xiong ◽  
Jian-Wei Wang ◽  
Wei-Jun Fan ◽  
Zhi-Gang Song ◽  
Chuan-Seng Tan
Keyword(s):  
Electronic Structures ◽  
Carrier Density ◽  
Doping Concentration ◽  
Optical Gain ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Absorption Loss ◽  
Electron States ◽  
Germanium Nanowires ◽  
Carrier Absorption

AbstractWe calculate the electronic structures of Germanium nanowires by taking the effective-mass theory. The electron and hole states at the Γ-valley are studied via the eight-band k.p theory. For the [111] L-valley, we expand the envelope wave function using Bessel functions to calculate the energies of the electron states for the first time. The results show that the energy dispersion curves of electron states at the L-valley are almost parabolic irrespective of the diameters of Germanium nanowires. Based on the electronic structures, the density of states of Germanium nanowires are also obtained, and we find that the conduction band density of states mostly come from the electron states at the L-valley because of the eight equivalent degenerate L points in Germanium. Furthermore, the optical gain spectra of Germanium nanowires are investigated. The calculations show that there are no optical gain along z direction even though the injected carrier density is 4 × 1019 cm−3 when the doping concentration is zero, and a remarkable optical gain can be obtained when the injected carrier density is close to 1 × 1020 cm−3, since a large amount of electrons will prefer to occupy the low-energy L-valley. In this case, the negative optical gain will be encountered considering free-carrier absorption loss as the increase of the diameter. We also investigate the optical gain along z direction as functions of the doping concentration and injected carrier density for the doped Germanium nanowires. When taking into account free-carrier absorption loss, the calculated results show that a positive net peak gain is most likely to occur in the heavily doped nanowires with smaller diameters. Our theoretical studies are valuable in providing a guidance for the applications of Germanium nanowires in the field of microelectronics and optoelectronics.

Fabrication and Characterization of SiO2 Based Waveguide Co-Doped with Si-Nanocrystal and Er3+

2007 ◽  
Vol 124-126 ◽  
pp. 515-518
Author(s):  
Se Weon Choi ◽  
Hyeon Taek Son ◽  
Chang Seog Kang ◽  
Junji Nishii
Keyword(s):  
Optical Gain ◽  
Rf Magnetron Sputtering ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Absorption Loss ◽  
Si Nanocrystals ◽  
Carrier Absorption ◽  
Fabrication And Characterization ◽  
Co Doped

Si and Er co-doped SiO2 films were fabricated by radio-frequency (RF) magnetron sputtering technique with a Si-Er-SiO2 target. The optical gain of 0.7 dB/cm was confirmed by the direct pumping of Er3+ using the laser diode (LD) of 980 nm in wavelength and 60 mW in output power. On the contrary, the pumping Si-nanocrystals by the Hg lamp 365 nm (1.5 W/cm2) induced the absorption loss above 1.48 μm region in wavelength, which was attributed to the free carrier absorption of Si-nanocrystals.

Sign in / Sign up

Export Citation Format

Share Document