Reduction of ion sputtering yield by special surface microtopography

1977 ◽  
Vol 30 (6) ◽  
pp. 268-271 ◽  
Author(s):  
J. F. Ziegler ◽  
J. J. Cuomo ◽  
J. Roth
Keyword(s):  
Ion Sputtering ◽  
Surface Microtopography ◽  
Special Surface ◽  
Sputtering Yield

Noble-gas ion sputtering yield of gold and copper: Dependence on the energy and angle of incidence of the projectiles

1987 ◽  
Vol 35 (5) ◽  
pp. 2198-2204 ◽  
Author(s):  
A. Oliva-Florio ◽  
R. A. Baragiola ◽  
M. M. Jakas ◽  
E. V. Alonso ◽  
J. Ferrón
Keyword(s):  
Noble Gas ◽  
Angle Of Incidence ◽  
Ion Sputtering ◽  
Sputtering Yield

The Surface Behavior of a Binary Alloy During Production by Ion Implantation

1981 ◽  
Vol 7 ◽  
Author(s):  
G. W. Reynolds ◽  
F. R. Vozzo ◽  
R. G. Alias ◽  
A. R. Knudson ◽  
J. M. Lambert ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Nickel Alloys ◽  
Surface Composition ◽  
Target Surface ◽  
Ion Sputtering ◽  
Surface Behavior ◽  
Sputtering Yield ◽  
Sputtering Yields ◽  
State Configuration ◽  
Initial Target

ABSTRACTThin surface copper-nickel alloys were prepared by ion implantation at 90 keV. During the implantation of one pure element by the other the sputtered products were collected on catcher foils at different stages from the beginning of the implant through to the steady state configuration of the target surface. The collector foils and targets were analyzed to determine the behavior of the sputtering yields during implantation and for the change in surface composition at the selected fluence. The total sputtering yield for the target and the effective elemental sputtering yields for each component appear to be functions of the changing surface fractions, the self ion sputtering yield of the implanted species, and the elemental sputtering yield of the initial target species. A model relating these parameters is presented.

Self-ion sputtering yield determinations of (100) nickel thin films

1992 ◽  
Vol 51 (1-3) ◽  
pp. 399-404 ◽  
Author(s):  
J.K. Steele ◽  
C.H. Koch ◽  
D.I. Potter
Keyword(s):  
Thin Films ◽  
Ion Sputtering ◽  
Nickel Thin Films ◽  
Sputtering Yield

scholarly journals A Diagnostic Spectral Indicator of the Exposure Age of an Asteroidal Surface

1992 ◽  
Vol 150 ◽  
pp. 461-462
Author(s):  
Joseph A. Nuth
Keyword(s):  
Silicon Carbide ◽  
Solar Wind ◽  
Chemical Reduction ◽  
Reduction Process ◽  
Hydrogen Ions ◽  
Ion Sputtering ◽  
Exposure Age ◽  
Wind Exposure ◽  
Sputtering Yield ◽  
Local Chemical Environment

The energy of the SiH vibrational fundamental has been shown be extremely sensitive to the oxidation state of the silicon to which the hydrogen is bound, ranging from 4.4 microns in highly oxidized silicate grains to 4.74 microns in silicon carbide (Moore, Tanabé and Nuth, Ap. J. (Lett.) 373, L31-L34, 1991). Yin, Ghose and Adler (Appl. Spectrosc. 26, 355-7, 1972) have shown that the process of ion-sputtering a metal oxide results in chemical reduction, due to the high sputtering yield and volatility of oxygen relative to the metal. These authors have shown that solar wind ion-sputtering of lunar soils could provide an explanation for the observed solar wind darkening of the lunar surface. We hypothesize that a similar ion-reduction process could occur on asteroidal surfaces exposed to the solar wind. A second consequence of solar wind exposure would be the implantation of hydrogen ions into the asteroidal surface. Stein (J. Elec. Mat. 4, 159-174, 1975) has shown that hydrogen-ions implanted into silicon exhibit infrared absorptions between 4.5 and 5.5 microns: similar features should result from the ion-implantation of hydrogen ions into partially reduced silicate minerals and glasses. The position of such features would be indicative of the local chemical environment of the silicon atom to which the hydrogen was bound.

Heavy‐ion sputtering yield of silicon

1975 ◽  
Vol 46 (5) ◽  
pp. 1919-1921 ◽  
Author(s):  
H. H. Andersen ◽  
H. L. Bay
Keyword(s):  
Heavy Ion ◽  
Ion Sputtering ◽  
Sputtering Yield
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