Heavy‐ion sputtering yield of silicon

1975 ◽  
Vol 46 (5) ◽  
pp. 1919-1921 ◽  
Author(s):  
H. H. Andersen ◽  
H. L. Bay
Keyword(s):  
Heavy Ion ◽  
Ion Sputtering ◽  
Sputtering Yield

The Z1dependence of heavy-ion sputtering yield in copper

1972 ◽  
Vol 13 (1-2) ◽  
pp. 67-74 ◽  
Author(s):  
H. H. Andersen ◽  
H. Bay
Keyword(s):  
Heavy Ion ◽  
Ion Sputtering ◽  
Sputtering Yield

Reduction of ion sputtering yield by special surface microtopography

1977 ◽  
Vol 30 (6) ◽  
pp. 268-271 ◽  
Author(s):  
J. F. Ziegler ◽  
J. J. Cuomo ◽  
J. Roth
Keyword(s):  
Ion Sputtering ◽  
Surface Microtopography ◽  
Special Surface ◽  
Sputtering Yield

scholarly journals Numerical Study of Hall Thruster Plume and Sputtering Erosion

2012 ◽  
Vol 2012 ◽  
pp. 1-16 ◽  
Author(s):  
Li Yan ◽  
Ping-Yang Wang ◽  
Yang-Hua Ou ◽  
Xiao-Lu Kang
Keyword(s):  
Electric Propulsion ◽  
Numerical Study ◽  
Three Dimensional ◽  
Direct Simulation Monte Carlo ◽  
Normal Incidence ◽  
Heavy Ion ◽  
Calculation Model ◽  
Hall Thruster ◽  
Yield Model ◽  
Sputtering Yield

Potential sputtering erosion caused by the interactions between spacecraft and plasma plume of Hall thrusters is a concern for electric propulsion. In this study, calculation model of Hall thruster’s plume and sputtering erosion is presented. The model is based on three dimensional hybrid particle-in-cell and direct simulation Monte Carlo method (PIC/DSMC method) which is integrated with plume-wall sputtering yield model. For low-energy heavy-ion sputtering in Hall thruster plume, the Matsunami formula for the normal incidence sputtering yield and the Yamamura angular dependence of sputtering yield are used. The validation of the simulation model is realized through comparing plume results with the measured data. Then, SPT-70’s sputtering erosion on satellite surfaces is assessed and effect of mass flow rate on sputtering erosion is analyzed.

Noble-gas ion sputtering yield of gold and copper: Dependence on the energy and angle of incidence of the projectiles

1987 ◽  
Vol 35 (5) ◽  
pp. 2198-2204 ◽  
Author(s):  
A. Oliva-Florio ◽  
R. A. Baragiola ◽  
M. M. Jakas ◽  
E. V. Alonso ◽  
J. Ferrón
Keyword(s):  
Noble Gas ◽  
Angle Of Incidence ◽  
Ion Sputtering ◽  
Sputtering Yield

The Surface Behavior of a Binary Alloy During Production by Ion Implantation

1981 ◽  
Vol 7 ◽  
Author(s):  
G. W. Reynolds ◽  
F. R. Vozzo ◽  
R. G. Alias ◽  
A. R. Knudson ◽  
J. M. Lambert ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Nickel Alloys ◽  
Surface Composition ◽  
Target Surface ◽  
Ion Sputtering ◽  
Surface Behavior ◽  
Sputtering Yield ◽  
Sputtering Yields ◽  
State Configuration ◽  
Initial Target

ABSTRACTThin surface copper-nickel alloys were prepared by ion implantation at 90 keV. During the implantation of one pure element by the other the sputtered products were collected on catcher foils at different stages from the beginning of the implant through to the steady state configuration of the target surface. The collector foils and targets were analyzed to determine the behavior of the sputtering yields during implantation and for the change in surface composition at the selected fluence. The total sputtering yield for the target and the effective elemental sputtering yields for each component appear to be functions of the changing surface fractions, the self ion sputtering yield of the implanted species, and the elemental sputtering yield of the initial target species. A model relating these parameters is presented.

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