Room‐temperature mesa lasers grown by selective liquid phase epitaxy

1976 ◽  
Vol 29 (3) ◽  
pp. 162-164 ◽  
Author(s):  
D. W. Bellavance ◽  
J. C. Campbell
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature

Liquid-phase-epitaxy-grown InAsxSb1−x∕GaAs for room-temperature 8–12μm infrared detectors

2006 ◽  
Vol 88 (24) ◽  
pp. 242108 ◽  
Author(s):  
Changtao Peng ◽  
NuoFu Chen ◽  
Fubao Gao ◽  
Xingwang Zhang ◽  
Chenlong Chen ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Infrared Detectors ◽  
Room Temperature

Hg1−x−yMnxCdyTe Alloys for 1.3−1.8 μm Photodiode Applications

1986 ◽  
Vol 89 ◽  
Author(s):  
S. H. Shin ◽  
J. G. Pasko ◽  
D. S. Lo ◽  
W. E. Tennant ◽  
J. R. Anderson ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature ◽  
Reverse Bias ◽  
Fiber Optic ◽  
Superior Performance ◽  
Device Performance ◽  
Device Structure ◽  
Cdte Substrate ◽  
P Type

AbstractHgMnCdTe/CdTe photodiodes with responsivity cutoffs of up to 1.54 pm have been fabricated by liquid phase epitaxy (LPE). The mesa device structure consists of a boron-implanted mosaic fabricated on a p-type Hg1−x−yMnxCdyTe layer grown on a CdTe substrate. A reverse breakdown voltage (VB) of 50 V and a leakage current density of 1.5 × 10−4 A/cm2 at V = −10 V was measured at room temperature (295K). A 0.75 pF capacitance was also measured under a 5 V reverse bias at room temperature. This device performance based on the quaternary HgMnCdTe shows both theoretical and practical promise of superior performance for wavelengths in the range 1.3 to 1.8 μm for fiber optic applications.

Growth Peculiarities and Magnetic Properties of (LuBi)3Fe5O12 Films by LPE Method

2013 ◽  
Vol 200 ◽  
pp. 256-260 ◽  
Author(s):  
I.I. Syvorotka ◽  
Igor M. Syvorotka ◽  
S.B. Ubizskii
Keyword(s):  
Magnetic Properties ◽  
Liquid Phase ◽  
Surface Morphology ◽  
Film Thickness ◽  
Faraday Rotation ◽  
Liquid Phase Epitaxy ◽  
Magnetization Reversal ◽  
Room Temperature ◽  
Mirror Surface ◽  
Different Types

The series of (LuBi)3Fe5O12 film were grown on (111) oriented GGG substrate with diameters 1, 2 and 3 inch by liquid phase epitaxy using Bi2O3-base flux. Different types of surface morphology on the grown films were observed. The films’ surface was smooth and mirror while the film thickness was less than 13 μm and becomes rough for thickness above this value. The grown films were characterized by measuring magnetization loops and magneto-optic Faraday rotation under magnetization reversal as well as ferromagnetic resonance (FMR). All films with mirror surface demonstrate the in-plane magnetization, high Faraday rotation and FMR linewidth about 0.8 Oe at 9.1 GHz and room temperature.

Room‐temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy

1984 ◽  
Vol 44 (11) ◽  
pp. 1035-1037 ◽  
Author(s):  
K. Wakao ◽  
H. Nishi ◽  
T. Kusunoki ◽  
S. Isozumi ◽  
S. Ohsaka
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature ◽  
Cw Operation ◽  
Gaas Substrates

RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

2019 ◽  
Vol 6 (3) ◽  
pp. 16-21
Author(s):  
Amin Safarbaevich Saidov ◽  
Kobil Asharovich Amonov ◽  
Ada Yul'evna Leyderman
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature ◽  
Experimental Results ◽  
Complex Nature ◽  
Silicon Substrates ◽  
The Third ◽  
Current Voltage ◽  
Current Voltage Characteristics

The possibility of growing of the solid solution (Si2)1 - x - y (Ge2)x (ZnSe)y on silicon substrates by liquid-phase epitaxy from the tin solution - melt has been shown. The current - voltage characteristics of heterostructures at room temperature has three sections: ohmic section - I ~ V , exponential one - I ~ exp ( qV / ckT ), and the third one with cubic dependence - I ~ V3 that at increasingtemperature is replaced by the weaker dependences - I ~ V2,8, I ~ V2,5 and I ~ V2,3 at temperatures of 360, 390 and 420 K, respectively. The experimental results are explained on the basis of theoretical ideas about the complex nature of the recombination processesin these materials.

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Sign in / Sign up

Export Citation Format

Share Document