Room-temperature InAsSbP∕InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5μm) dynamic scene projection

2006 ◽  
Vol 89 (20) ◽  
pp. 201114 ◽  
Author(s):  
V. K. Malyutenko ◽  
O. Yu. Malyutenko ◽  
A. V. Zinovchuk
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Dynamic Scene ◽  
Light Emitting

Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy

2007 ◽  
Author(s):  
V. M. Smirnov ◽  
P. J. Batty ◽  
A. Krier ◽  
R. Jones ◽  
V. I. Vasil'ev ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting

Al0.3Ga0.7As/Al0.05Ga0.95As light‐emitting diodes on GaAs‐coated Si substrates grown by liquid phase epitaxy

1988 ◽  
Vol 53 (13) ◽  
pp. 1201-1203 ◽  
Author(s):  
Shiro Sakai ◽  
Shi S. Chang ◽  
Ramu V. Ramaswamy ◽  
Jae‐Hoon Kim ◽  
Gouri Radhakrishnan ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Si Substrates

Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs0.89Sb0.11/InAs0.80P0.12Sb0.08Heterostructures

2000 ◽  
Vol 39 (Part 1, No. 9A) ◽  
pp. 5039-5043 ◽  
Author(s):  
Xiu Ying Gong ◽  
Hirofumi Kan ◽  
Takamitsu Makino ◽  
Takefumi Iida ◽  
Kenzo Watanabe ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting ◽  
Liquid Phase Epitaxial
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