Very low threshold‐current temperature sensitivity in constricted double‐heterojunction AlGaAs lasers

D. Botez; J. C. Connolly; D. B. Gilbert; M. Ettenberg

doi:10.1063/1.329846

Very low threshold‐current temperature sensitivity in constricted double‐heterojunction AlGaAs lasers

Journal of Applied Physics ◽

10.1063/1.329846 ◽

1981 ◽

Vol 52 (6) ◽

pp. 3840-3844 ◽

Cited By ~ 14

Author(s):

D. Botez ◽

J. C. Connolly ◽

D. B. Gilbert ◽

M. Ettenberg

Keyword(s):

Temperature Sensitivity ◽

Threshold Current ◽

Double Heterojunction ◽

Low Threshold

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Single‐mode positive‐index guided cw constricted double‐heterojunction large‐optical‐cavity AlGaAs lasers with low threshold‐current temperature sensitivity

Applied Physics Letters ◽

10.1063/1.92495 ◽

1981 ◽

Vol 38 (9) ◽

pp. 658-660 ◽

Cited By ~ 17

Author(s):

D. Botez ◽

J. C. Connolly

Keyword(s):

Temperature Sensitivity ◽

Optical Cavity ◽

Single Mode ◽

Threshold Current ◽

Double Heterojunction ◽

Low Threshold ◽

Positive Index

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Optimal cavity design for low‐threshold‐current‐density operation of double‐heterojunction diode lasers

Applied Physics Letters ◽

10.1063/1.90908 ◽

1979 ◽

Vol 35 (1) ◽

pp. 57-60 ◽

Cited By ~ 20

Author(s):

Dan Botez

Keyword(s):

Current Density ◽

Diode Lasers ◽

Threshold Current ◽

Threshold Current Density ◽

Heterojunction Diode ◽

Double Heterojunction ◽

Cavity Design ◽

Low Threshold

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Metalorganic c.v.d. growth of GaAs-GaAlAs double heterojunction lasers having low interfacial recombination and low threshold current

Electronics Letters ◽

10.1049/el:19790111 ◽

1979 ◽

Vol 15 (5) ◽

pp. 156 ◽

Cited By ~ 18

Author(s):

E.J. Thrush ◽

P.R. Selway ◽

G.D. Henshall

Keyword(s):

Threshold Current ◽

Double Heterojunction ◽

Low Threshold ◽

Interfacial Recombination

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Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19880364 ◽

1988 ◽

Vol 24 (9) ◽

pp. 537

Author(s):

B. Saint-Cricq ◽

F. Chatenoud ◽

F. Lozes-Dupuy ◽

S. Fourtine ◽

H. Martinot

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold

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Extremely low threshold current 1.52 μm InGaAsP/InP MS-DFB lasers with second-order grating

Electronics Letters ◽

10.1049/el:19860550 ◽

1986 ◽

Vol 22 (15) ◽

pp. 802 ◽

Cited By ~ 19

Author(s):

H. Burkhard ◽

E. Kuphal ◽

H.W. Dinges

Keyword(s):

Threshold Current ◽

Second Order ◽

Low Threshold

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Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

Japanese Journal of Applied Physics ◽

10.1143/jjap.18.1795 ◽

1979 ◽

Vol 18 (9) ◽

pp. 1795-1805 ◽

Cited By ~ 44

Author(s):

Yoshio Itaya ◽

Yasuharu Suematsu ◽

Shinya Katayama ◽

Katsumi Kishino ◽

Shigehisa Arai

Keyword(s):

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Double Heterostructure ◽

Low Threshold

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Very low threshold current density SCH-MQW laser diodes emitting at 1.55[micro sign]m

Electronics Letters ◽

10.1049/el:19890738 ◽

1989 ◽

Vol 25 (16) ◽

pp. 1103 ◽

Cited By ~ 26

Author(s):

R.W. Glew ◽

B. Garrett ◽

P.D. Greene

Keyword(s):

Current Density ◽

Laser Diodes ◽

Threshold Current ◽

Threshold Current Density ◽

Low Threshold

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Semiconductor lasers with unconventional cladding structures for small beam divergence and low threshold current

Optical and Quantum Electronics ◽

10.1007/bf00326196 ◽

1996 ◽

Vol 28 (10) ◽

pp. 1229-1238 ◽

Cited By ~ 6

Author(s):

Shun Tung Yen ◽

Chien Ping Lee

Keyword(s):

Semiconductor Lasers ◽

Threshold Current ◽

Beam Divergence ◽

Low Threshold

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Low threshold current density 1.3 [micro sign]m InAs∕InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy

Electronics Letters ◽

10.1049/el:20040127 ◽

2004 ◽

Vol 40 (3) ◽

pp. 179 ◽

Cited By ~ 7

Author(s):

F.Y. Chang ◽

J.D. Lee ◽

H.H. Lin

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Dot ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Dot Lasers ◽

Gas Source ◽

Low Threshold ◽

Cladding Layers

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Low threshold current GaAs/InGaAs vertical-cavity surface-emitting laser grown at a constant temperature by molecular beam epitaxy

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616475 ◽

2002 ◽

Author(s):

C.Y. Li ◽

D.H. Zhang ◽

S.F. Yoon

Keyword(s):

Molecular Beam Epitaxy ◽

Constant Temperature ◽

Molecular Beam ◽

Threshold Current ◽

Cavity Surface ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Low Threshold ◽

Vertical Cavity

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