Power deposition in high‐density inductively coupled plasma tools for semiconductor processing

1995 ◽  
Vol 2 (6) ◽  
pp. 2597-2604 ◽  
Author(s):  
E. F. Jaeger ◽  
L. A. Berry ◽  
J. S. Tolliver ◽  
D. B. Batchelor
Keyword(s):  
Inductively Coupled Plasma ◽  
High Density ◽  
Semiconductor Processing ◽  
Power Deposition ◽  
Inductively Coupled

Nanometer-Scale SOI Based Y-Branch Couplers for High Density Optical Integrated Circuits

2013 ◽  
Vol 562-565 ◽  
pp. 996-1000
Author(s):  
Zhen Zhou ◽  
Zheng Fang Dong ◽  
Li Shuang Feng ◽  
Kun Bo Wang ◽  
Yin Zhou Zhi
Keyword(s):  
Integrated Circuits ◽  
Inductively Coupled Plasma ◽  
Beam Propagation Method ◽  
High Density ◽  
Propagation Loss ◽  
Nanometer Scale ◽  
Optical Integrated Circuits ◽  
Inductively Coupled ◽  
Branch Angle ◽  
Strong Confinement

SOI Ridge nanowire waveguide (RNW) has advantages of strong confinement of optical mode, low propagation loss, small bend radius and fully compatible with CMOS technique, etc. An ultra-compact Y-branch coupler based on SOI RNW was designed and fabricated. Based on the finite-difference beam propagation method (FD-BPM), key parameters of the coupler were analyzed. Then the device was fabricated by electron beam lithography (EBL) and inductively coupled plasma (ICP) reactive ion etching. Results showed that the propagation loss of RNW was 1.89 dB/mm, and the radiation loss of the coupler with branch angle of 30° was only 0.66 dB. Compared with traditional Y-branch coupler, the proposed structure were more promising for high density optical integrated circuits.

Large volume, high density rf inductively coupled plasma

1987 ◽  
Vol 50 (17) ◽  
pp. 1130-1132 ◽  
Author(s):  
R. W. Boswell ◽  
R. K. Porteous
Keyword(s):  
Large Volume ◽  
Inductively Coupled Plasma ◽  
High Density ◽  
Inductively Coupled

scholarly journals A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 123
Author(s):  
Katarzyna Racka-Szmidt ◽  
Bartłomiej Stonio ◽  
Jarosław Żelazko ◽  
Maciej Filipiak ◽  
Mariusz Sochacki
Keyword(s):  
Silicon Carbide ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Reactive Ion Etching ◽  
Semiconductor Processing ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Hard Materials ◽  
Potential Benefits ◽  
First Time

The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond. The paper presents a review of silicon carbide etching—principles of the ICP-RIE method, the results of SiC etching and undesired phenomena of the ICP-RIE process are presented. The article includes SEM photos and experimental results obtained from different ICP-RIE processes. The influence of O2 addition to the SF6 plasma as well as the change of both RIE and ICP power on the etching rate of the Cr mask used in processes and on the selectivity of SiC/Cr etching are reported for the first time. SiC is an attractive semiconductor with many excellent properties, that can bring huge potential benefits thorough advances in submicron semiconductor processing technology. Recently, there has been an interest in SiC due to its potential wide application in power electronics, in particular in automotive, renewable energy and rail transport.

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