Physics with low energy muons at the front end of the muon collider

Prospects for high precision measurements on muonic atoms at the front end of a muon collider

10.1063/1.56263 ◽

1998 ◽

Cited By ~ 1

Author(s):

D. Kawall ◽

M. G. Boshier ◽

V. W. Hughes ◽

K. Jungmann ◽

W. Liu ◽

...

Keyword(s):

High Precision ◽

Precision Measurements ◽

Muonic Atoms ◽

Front End ◽

Muon Collider

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Bluetooth Low Energy (BLE) Direct Down Conversion Receiver Front End in 65nm CMOS Technology

2017 New Generation of CAS (NGCAS) ◽

10.1109/ngcas.2017.44 ◽

2017 ◽

Cited By ~ 1

Author(s):

M. Nasrollahpour ◽

R. Sreekumar ◽

F. Hajilou ◽

M. Aldacher ◽

S. Hamedi-Hagh

Keyword(s):

Cmos Technology ◽

Low Energy ◽

Bluetooth Low Energy ◽

Front End ◽

Down Conversion

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Front-End Design Studies for a Muon Collider

Proceedings of the 2005 Particle Accelerator Conference ◽

10.1109/pac.2005.1591201 ◽

2006 ◽

Author(s):

R.C. Fernow ◽

J.C. Gallardo

Keyword(s):

Design Studies ◽

Front End ◽

Muon Collider

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A 1.2V, 2.7mA receiver front-end for bluetooth low energy applications

2014 IEEE Radio and Wireless Symposium (RWS) ◽

10.1109/rws.2014.6830079 ◽

2014 ◽

Cited By ~ 2

Author(s):

Lei Liao ◽

Aytac Atac ◽

Ye Zhang ◽

Yifan Wang ◽

Zhimiao Chen ◽

...

Keyword(s):

Low Energy ◽

Bluetooth Low Energy ◽

Energy Applications ◽

Front End

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Fast binary readout front-end electronics for silicon strip detectors for low energy x-ray imaging applications

Measurement Science and Technology ◽

10.1088/0957-0233/18/8/022 ◽

2007 ◽

Vol 18 (8) ◽

pp. 2465-2471 ◽

Cited By ~ 1

Author(s):

Pawel Grybos

Keyword(s):

Low Energy ◽

X Ray ◽

Front End ◽

Strip Detectors ◽

X Ray Imaging ◽

Silicon Strip Detectors

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A 0.55 mW SAW-Less Receiver Front-End for Bluetooth Low Energy Applications

IEEE Journal on Emerging and Selected Topics in Circuits and Systems ◽

10.1109/jetcas.2014.2337153 ◽

2014 ◽

Vol 4 (3) ◽

pp. 262-272 ◽

Cited By ~ 13

Author(s):

Carl Bryant ◽

Henrik Sjoland

Keyword(s):

Low Energy ◽

Bluetooth Low Energy ◽

Energy Applications ◽

Front End

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Modeling of Diffusion and Activation of Low Energy Arsenic Implants in Silicon

MRS Proceedings ◽

10.1557/proc-717-c3.7 ◽

2002 ◽

Vol 717 ◽

Cited By ~ 1

Author(s):

Srinivasan Chakravarthi ◽

Chidambaram P.R. ◽

Charles Machala ◽

Amitabh Jain ◽

Xin Zhang

Keyword(s):

Low Energy ◽

Junction Depth ◽

University Of Washington ◽

Front End ◽

Key Features ◽

High Concentrations

SummaryIn summary, we find it is possible to model the extent of arsenic diffusion during front-end and back-end processes that define the final junction depth. The key features of the model can be summarised as: (a) Interstitials from implant damage play a diminished role as implant energies are scaled; (b) As4V formation and precipitation at high concentrations is critical to accurate modeling of ultra-shallow arsenic junctions. These models when used with device simulations help optimize transistor performance/tradeoffs.We would like to thank Pavel Fastenko and Scott T. Dunham (University of Washington) for details and discussion regarding their modeling results.

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