An infrared transmission study of Ge:Mn thick films prepared by ion implantation and post-annealing

2020 ◽  
Vol 127 (10) ◽  
pp. 103902
Author(s):  
L. H. Obied ◽  
S. Roorda ◽  
S. Prucnal ◽  
Shengqiang Zhou ◽  
D. A. Crandles
Keyword(s):  
Ion Implantation ◽  
Thick Films ◽  
Infrared Transmission ◽  
Post Annealing ◽  
Transmission Study

Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

1987 ◽  
Vol 97 ◽  
Author(s):  
H. Kong ◽  
H. J. Kim ◽  
J. A. Edmond ◽  
J. W. Palmour ◽  
J. Ryu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Deep Level ◽  
Schottky Diodes ◽  
Free Carriers ◽  
Device Development ◽  
Post Annealing ◽  
P Type ◽  
Sic Films

ABSTRACTMonocrystalline β-SiC films have been chemically vapor deposited on Si(100) and c-SiC(0001) at 1660K-1823K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films grown directly on Si(100) contained substantial concentrations of dislocations, stacking faults and antiphase boundaries (APB); those on α-SiC(0001) contained double positioning boundaries. Both the APBs and the double positioning boundaries were eliminated by using off-axis orientations of the respective substrates. Films produced on Si(100) have also been doped during growth and via ion implantation with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Results from the former procedure showed the ionized dopant/total dopant concentration ratios for N, P, B and Al to be 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P and B at 1660K were determined to be ∼ 2E20, 1E18 and 8E18 cm−3, respectively; that of Al exceeds 2E19 cm−3. High temperature ion implantation coupled with dynamic and post annealing resulted in a markedly reduced defect concentration relative to that observed in similar research at the lower temperatures. Schottky diodes, p-n junctions, and MOSFET devices have been fabricated. The p-n junctions have the characteristics of insulators containing free carriers and deep level traps. The MOSFETs show very good I-V characteristics up to 673K, but have not been optimized.

Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation

2016 ◽  
Vol 14 (5) ◽  
pp. 051602-51605 ◽  
Author(s):  
Xiaodan Wang Xiaodan Wang ◽  
Yajuan Mo Yajuan Mo ◽  
Xionghui Zeng Xionghui Zeng ◽  
Hongmin Mao Hongmin Mao ◽  
Jianfeng Wang Jianfeng Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Thick Films ◽  
Er Doped

scholarly journals Thermal Annealing of High Dose P Implantation in 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 399-402 ◽  
Author(s):  
Cristiano Calabretta ◽  
Massimo Zimbone ◽  
Eric G. Barbagiovanni ◽  
Simona Boninelli ◽  
Nicolò Piluso ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Epitaxial Layer ◽  
Point Defects ◽  
High Dose ◽  
Double Step ◽  
Post Annealing ◽  
Transmission Electron

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM). The aim of this work was to test the effectiveness of double step annealing to reduce the density of point defects generated during the annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work evidences that neither the first 1 hour isochronal annealing at 1650 - 1700 - 1750 °C, nor the second one at 1500 °C for times between 4 hour and 14 hour were able to recover a satisfactory crystallinity of the sample and achieve dopant activations exceeding 1%.

Infrared transmission study of crystal-field excitations inLa2−x−yNdxSryCuO4

2002 ◽  
Vol 66 (22) ◽  
Author(s):  
G. Riou ◽  
S. Jandl ◽  
M. Poirier ◽  
V. Nekvasil ◽  
M. Maryško ◽  
...  
Keyword(s):  
Crystal Field ◽  
Infrared Transmission ◽  
Transmission Study

Study of the changes in the infrared transmission of SiO2spin‐on‐glass due to ion implantation

1991 ◽  
Vol 59 (23) ◽  
pp. 2953-2955 ◽  
Author(s):  
Y. Shacham‐Diamand ◽  
E. Finkman ◽  
Y. Pinkas ◽  
N. Moriya
Keyword(s):  
Ion Implantation ◽  
Infrared Transmission

Doping properties of the Ion-Beam-Sputtered SiGe Film

1996 ◽  
Vol 441 ◽  
Author(s):  
Wen-Jie Qi ◽  
Zhi-Sheng Wang ◽  
Zhi-Guang Gu ◽  
Guo-Ping Ru ◽  
Guo-Bao Jialig ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Polycrystalline Structure ◽  
X Ray ◽  
Post Annealing ◽  
And Diffusion

AbstractThe ion-beam-sputtered polycrystalline SiGe film and its doping properties have been studied. Boron and phosphorus have been doped into the sputtered poly-SiGe film by ion implantation and diffusion. To activate the implanted impurities, both rapid thermal annealing and fiirnace annealing have been used. The electrical measurements show that boron and plhosphorus can be doped into sputtered SiGe films and effectively activated by both ion implantation with post-annealing and diffiision. Hall mobilities as high as 31 cm2/V-s and 20 cm2/V.s have been obtained in B-difflhsed and P-diffused SiGe films, respectively. The x-ray diffraction spectra of the sputtered Sifie filhn show its typical polycrystalline structure with (111), (220) and (311) as the preferential orientations.

Structural Study of BF$_{2}$ Ion Implantation and Post Annealing of BaSi$_{2}$ Epitaxial Films

2011 ◽  
Vol 50 ◽  
pp. 121202 ◽  
Author(s):  
Kosuke O. Hara ◽  
Noritaka Usami ◽  
Yusuke Hoshi ◽  
Yasuhiro Shiraki ◽  
Mitsushi Suzuno ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Structural Study ◽  
Epitaxial Films ◽  
Post Annealing

Far-infrared transmission study of single-crystalBi2Sr2Ca1Cu2Oxsuperconductors

1990 ◽  
Vol 65 (15) ◽  
pp. 1941-1944 ◽  
Author(s):  
L. Forro ◽  
G. L. Carr ◽  
G. P. Williams ◽  
D. Mandrus ◽  
L. Mihaly
Keyword(s):  
Far Infrared ◽  
Infrared Transmission ◽  
Transmission Study
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