Doping properties of the Ion-Beam-Sputtered SiGe Film

1996 ◽  
Vol 441 ◽  
Author(s):  
Wen-Jie Qi ◽  
Zhi-Sheng Wang ◽  
Zhi-Guang Gu ◽  
Guo-Ping Ru ◽  
Guo-Bao Jialig ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Polycrystalline Structure ◽  
X Ray ◽  
Post Annealing ◽  
And Diffusion

AbstractThe ion-beam-sputtered polycrystalline SiGe film and its doping properties have been studied. Boron and phosphorus have been doped into the sputtered poly-SiGe film by ion implantation and diffusion. To activate the implanted impurities, both rapid thermal annealing and fiirnace annealing have been used. The electrical measurements show that boron and plhosphorus can be doped into sputtered SiGe films and effectively activated by both ion implantation with post-annealing and diffiision. Hall mobilities as high as 31 cm2/V-s and 20 cm2/V.s have been obtained in B-difflhsed and P-diffused SiGe films, respectively. The x-ray diffraction spectra of the sputtered Sifie filhn show its typical polycrystalline structure with (111), (220) and (311) as the preferential orientations.

Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 733-736 ◽  
Author(s):  
Sergio Ferrero ◽  
A. Albonico ◽  
Umberto M. Meotto ◽  
G. Rambolà ◽  
Samuele Porro ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ohmic Contacts ◽  
Structural Evolution ◽  
Auger Spectroscopy ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Ohmic Behavior ◽  
Semiconductor Interfaces

In this work we report an analysis on Ni/4H-SiC interfaces aimed at optimizing the ohmic contacts. Several thermal cycles have been performed by rapid thermal annealing checking the possible chemical reactions at the metal semiconductor interfaces. Micro x-ray diffraction and micro Raman techniques have been performed in order to study the interface micro structural evolution. Inter diffusion of each element at the Ni - SiC interface was examined using Auger spectroscopy. Electrical measurements have been performed in order to check the ohmic behavior of the contacts. Finally, a correlation between microstructures evolution and electrical behaviors is reported.

Ion Beam Synthesis of Buried CoSi2 Layers in SiGe Alloys

1992 ◽  
Vol 279 ◽  
Author(s):  
R. Jebasinski ◽  
S. Mantl ◽  
Chr. Dieker ◽  
H. Dederichs ◽  
L. Vescan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Single Crystal ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling ◽  
Transmission Electron

ABSTRACTSynthesis of buried, epitaxial CoSi2 layers in Si1−xGex alloys (x =0.48 and x = 0.09) by 100 and 150 keV Co+ ion implantation and subsequent rapid thermal annealing was studied by X-Ray diffraction, Rutherford backscattering spectroscopy, He ion channeling, Auger Eectron Spectroscopy and Transmission Electron Microscopy. Buried single-crystal CoSi2 layers in the Si0.91Ge0.09 alloy containing ≈ 1 at% Ge were formed. The suicide formation causes an outdiffusion of Ge leading to an increase in the Ge concentration of the adjacent SiGe layers. In contrast, in the Si0.52Ge0.48 alloy no buried suicide layers could be produced.

Rapid Thermal Annealing Characteristics of Mg Doped InN by X-Ray Diffraction

2013 ◽  
Vol 40 (1) ◽  
pp. 0106003
Author(s):  
王健 Wang Jian ◽  
谢自力 Xie Zili ◽  
张韵 Zhang Yun ◽  
滕龙 Teng Long ◽  
李烨操 Li Yecao ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mg Doped

scholarly journals Superconducting YBaCuO thin Films by Cu-Ion Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
Kevin M. Hubbard ◽  
Nicole Bordes ◽  
Michael Nastasi ◽  
Joseph R. Tesmer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Normal State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.

Rapid Thermal Annealing of Composite TaSi2/n+ Poly-Si Silicide Films

1983 ◽  
Vol 23 ◽  
Author(s):  
D.L. Kwong ◽  
R. Kwor ◽  
B.Y. Tsaur ◽  
K. Daneshvar
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealed Sample ◽  
Vlsi Circuits ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
X Ray ◽  
Transmission Electron ◽  
Average Grain Size

ABSTRACTThe formation of composite TaSi2/n+ Poly-Si silicide films through the use of rapid thermal annealing (RTA) is investigated by x-ray diffraction, four point probe, scanning Auger microprobes (SAM) with ion sputter etching, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and capacitance-voltage (C-V) measurements. 0.2 μm polysilicon is deposited on oxidized Si wafer by LPCVD and doped with phosphorus. A layer of 2200 A TaSix is then co-sputtered on polysilicon samples from separate targets. These as-deposited films are then annealed by RTA in an argon ambient for 1 sec. and 10 sec. at various temperatures. X-ray diffraction and SAM results show the rapid formation of a uniform stoichiometric tantalum disilicide via Si migration from polysilicon. TEM micrographs show simlilar results for samples annealed at 1000°C in furnace for 30 min. or by RTA for 1 sec., exhibiting average grain size greater than 1000 A. Sheet resistance of samples annealed by furnace annealing and RTA are comparable. SEM micrographs indicate that the surface morphology of the RTA-annealed sample is superior to that obtained by furnace annealing. These results show that RTA may offer a practical solution to low-resistivity silicide formation in VLSI circuits.

Formation of Titanium Silicide by Multiple Arsenic Implantations and Ion Beam Mixing

1991 ◽  
Vol 224 ◽  
Author(s):  
Po-Ching Chen ◽  
Jian-Yang Lin ◽  
Huey-Liang Hwang
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Titanium Silicide ◽  
Mixing Conditions ◽  
Cross Sectional ◽  
Ion Beam Mixing ◽  
Post Annealing

AbstractTitanium silicide was formed on the top of Si wafers by arsenic ion beam mixing and rapid thermal annealing. Three different arsenic-ion mixing conditions were examined in this work. The sheet resistance, residue As concentration post annealing and TiSi2 phase were characterized by using the* four-point probe, RBS and electron diffraction, respectively. TiSi2 of C54 phase was identified in the doubly implanted samples. The thickness of the Ti silicide and the TiSi2/Si interface were observed by the cross-sectional TEM.

Formation of Cosi2-Shallow Junctions By Ion Beam Mixing and Rapid Thermal Annealing

1990 ◽  
Vol 181 ◽  
Author(s):  
L. Niewöhner ◽  
D. Depta
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Dopant Distribution ◽  
Junction Depth ◽  
Ion Beam Mixing ◽  
Sem And Tem ◽  
Shallow Junctions

ABSTRACTFormation of CoSi2 using the technique of ion implantation through metal (ITM) and subsequent appropriate rapid thermal annealing is described. Silicide morphology is investigated by SEM and TEM. SIMS and RBS are used to determine dopant distribution and junction depth. Self-aligned CoSi2/n+p diodes produced in this technique are presented.

Direct Silicidation of Co on Si by Rapid Thermal Annealing

1985 ◽  
Vol 52 ◽  
Author(s):  
M. Tabasky ◽  
E. S. Bulat ◽  
B. M. Ditchek ◽  
M. A. Sullivan ◽  
S. Shatas
Keyword(s):  
Contact Resistance ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Cobalt Silicide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Resistivity ◽  
Dopant Redistribution

ABSTRACTRapid thermal annealing is used to form cobalt silicide directly on unimplanted as well as B, As, and P implanted wafers. The films are characterized by sheet resistance, X-ray diffraction, SEM, SIMS, and contact resistance measurements. The direct silicidation of cobalt on Si by rapid thermal annealing yields smooth, low resistivity films with minimal dopant redistribution.

Dislocation sources and slip band nucleation from indents on silicon wafers

2010 ◽  
Vol 43 (5) ◽  
pp. 1036-1039 ◽  
Author(s):  
J. Wittge ◽  
A. N. Danilewsky ◽  
D. Allen ◽  
P. McNally ◽  
Z. Li ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Slip Band ◽  
Rapid Thermal Annealing ◽  
Line Tension ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Imaging ◽  
Dislocation Sources ◽  
Nucleation Of Dislocations

The nucleation of dislocations at controlled indents in silicon during rapid thermal annealing has been studied byin situX-ray diffraction imaging (topography). Concentric loops extending over pairs of inclined {111} planes were formed, the velocities of the inclined and parallel segments being almost equal. Following loss of the screw segment from the wafer, the velocity of the inclined segments almost doubled, owing to removal of the line tension of the screw segments. The loops acted as obstacles to slip band propagation.

X-Ray Induced Depth Profiling of Ion Implantations into Various Semiconductor Materials

2012 ◽  
Vol 195 ◽  
pp. 274-276 ◽  
Author(s):  
Philipp Hönicke ◽  
Matthias Müller ◽  
Burkhard Beckhoff
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Measurement Techniques ◽  
Depth Profiling ◽  
Low Energy ◽  
Semiconductor Materials ◽  
Leakage Currents ◽  
X Ray ◽  
20 Nm

The continuing shrinking of the component dimensions in ULSI technology requires junction depths in the 20-nm regime and below to avoid leakage currents. These ultra shallow dopant distributions can be formed by ultra-low energy (ULE) ion implantation. However, accurate measurement techniques for ultra-shallow dopant profiles are required in order to characterize ULE implantation and the necessary rapid thermal annealing (RTA) processes.

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