scholarly journals The impact of strained layer superlattice (SLS) to the emission and internal quantum efficiency (IQE) of a GaN LED

2020 ◽  
Author(s):  
Tain Shi Min ◽  
Syarifah Norfaezah Sabki ◽  
Noraini Othman
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Strained Layer ◽  
Gan Led ◽  
Strained Layer Superlattice ◽  
The Impact

scholarly journals InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 806 ◽  
Author(s):  
Gamini Ariyawansa ◽  
Joshua Duran ◽  
Charles Reyner ◽  
John Scheihing
Keyword(s):  
High Temperature ◽  
Quantum Efficiency ◽  
Focal Plane ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
Integration Time ◽  
Strained Layer ◽  
Detector Structure ◽  
Strained Layer Superlattice ◽  
High Temperature Operation

This paper reports an InAs/InAsSb strained-layer superlattice (SLS) mid-wavelength infrared detector and a focal plane array particularly suited for high-temperature operation. Utilizing the nBn architecture, the detector structure was grown by molecular beam epitaxy and consists of a 5.5 µm thick n-type SLS as the infrared-absorbing element. Through detailed characterization, it was found that the detector exhibits a cut-off wavelength of 5.5 um, a peak external quantum efficiency (without anti-reflection coating) of 56%, and a dark current of 3.4 × 10−4 A/cm2, which is a factor of 9 times Rule 07, at 160 K temperature. It was also found that the quantum efficiency increases with temperature and reaches ~56% at 140 K, which is probably due to the diffusion length being shorter than the absorber thickness at temperatures below 140 K. A 320 × 256 focal plane array was also fabricated and tested, revealing noise equivalent temperature difference of ~10 mK at 80 K with f/2.3 optics and 3 ms integration time. The overall performance indicates that these SLS detectors have the potential to reach the performance comparable to InSb detectors at temperatures higher than 80 K, enabling high-temperature operation.

scholarly journals Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

2014 ◽  
Author(s):  
Ilya E. Titkov ◽  
Amit Yadav ◽  
Vera L. Zerova ◽  
Modestas Zulonas ◽  
Andrey F. Tsatsulnikov ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Colour Temperature ◽  
Gan Led

scholarly journals Sensitivity Analysis of GaN/AlGaN Quantum Dot Based Led

2021 ◽  
Author(s):  
Sumathi Kandasamy ◽  
Nagarajan K K ◽  
Srinivasan R
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
Performance Metrics ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Optical Gain ◽  
Input Power ◽  
Geometrical Parameters ◽  
Significant Parameter ◽  
The Impact

Abstract The impact of various geometrical parameters and doping parameters on the performance of GaN/AlGaN quantum dot-based light-emitting diode using 3D numerical simulations have been studied in this work. The parameters are ranked based on their sensitivity coefficients. Four important performance metrics, (i) internal quantum efficiency, (ii) responsivity, (iii) optical gain, and (iv) input power are used for this study. The bottom radius of the quantum dot is found to be the most significant parameter with respect to the internal quantum efficiency and optical gain. Nanocolumn radius is the most significant parameter with respect to Responsivity and input power. The overall ranking suggests that the Nanocolumn radius is the most sensitive parameter.

Internal Quantum Efficiency of InGaN/GaN Led Structures Grown on a Patterned Sapphire Substrate

2014 ◽  
Vol 57 (5) ◽  
pp. 657-661 ◽  
Author(s):  
I. A. Prudaev ◽  
I. S. Romanov ◽  
Vad. A. Novikov ◽  
А. А. Marmalyuk ◽  
V. A. Kureshov ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Sapphire Substrate ◽  
Internal Quantum Efficiency ◽  
Patterned Sapphire Substrate ◽  
Gan Led

Emission rate and internal quantum efficiency enhancement in different geometrical shapes of GaN LED

2017 ◽  
Author(s):  
S. Rashid ◽  
M. H. A. Wahid ◽  
N. A. M. Ahmad Hambali ◽  
N. S. A. Abdul Halim ◽  
M. M. Ramli ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Emission Rate ◽  
Internal Quantum Efficiency ◽  
Efficiency Enhancement ◽  
Gan Led ◽  
Geometrical Shapes

Investigation of quantum efficiency in mid-wave infrared (MWIR) InAs/GaSb type-II strained layer superlattice (T2SL) detectors

2014 ◽  
Author(s):  
Lilian Acosta ◽  
Brianna Klein ◽  
Zhao-Bing Tian ◽  
Eric Frantz ◽  
Stephen Myers ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Type Ii ◽  
Strained Layer ◽  
Strained Layer Superlattice

Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%

2011 ◽  
Vol 315 (1) ◽  
pp. 263-266 ◽  
Author(s):  
JaeWon Lee ◽  
Youngjo Tak ◽  
Jun-Youn Kim ◽  
Hyun-Gi Hong ◽  
Suhee Chae ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
High Quality ◽  
Si Substrates ◽  
Gan Led

The limits of strain and lattice parameter measurements by CBED

1989 ◽  
Vol 47 ◽  
pp. 518-519
Author(s):  
Hamish L. Fraser
Keyword(s):  
Electron Beam ◽  
Mirror Symmetry ◽  
Local Symmetry ◽  
Lattice Parameter ◽  
Growth Direction ◽  
Surface Relaxation ◽  
Strained Layer ◽  
Axis Parallel ◽  
Local Lattice ◽  
Strained Layer Superlattice

The topic of strain and lattice parameter measurements using CBED is discussed by reference to several examples. In this paper, only one of these examples is referenced because of the limitation of length. In this technique, scattering in the higher order Laue zones is used to determine local lattice parameters. Work (e.g. 1) has concentrated on a model strained-layer superlattice, namely Si/Gex-Si1-x. In bulk samples, the strain is expected to be tetragonal in nature with the unique axis parallel to [100], the growth direction. When CBED patterns are recorded from the alloy epi-layers, the symmetries exhibited by the patterns are not tetragonal, but are in fact distorted from this to lower symmetries. The spatial variation of the distortion close to a strained-layer interface has been assessed. This is most readily noted by consideration of Fig. 1(a-c), which show enlargements of CBED patterns for various locations and compositions of Ge. Thus, Fig. 1(a) was obtained with the electron beam positioned in the center of a 5Ge epilayer and the distortion is consistent with an orthorhombic distortion. When the beam is situated at about 150 nm from the interface, the same part of the CBED pattern is shown in Fig. 1(b); clearly, the symmetry exhibited by the mirror planes in Fig. 1 is broken. Finally, when the electron beam is positioned in the center of a 10Ge epilayer, the CBED pattern yields the result shown in Fig. 1(c). In this case, the break in the mirror symmetry is independent of distance form the heterointerface, as might be expected from the increase in the mismatch between 5 and 10%Ge, i.e. 0.2 to 0.4%, respectively. From computer simulation, Fig.2, the apparent monocline distortion corresponding to the 5Ge epilayer is quantified as a100 = 0.5443 nm, a010 = 0.5429 nm and a001 = 0.5440 nm (all ± 0.0001 nm), and α = β = 90°, γ = 89.96 ± 0.02°. These local symmetry changes are most likely due to surface relaxation phenomena.

Sign in / Sign up

Export Citation Format

Share Document