scholarly journals Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

2014 ◽  
Author(s):  
Ilya E. Titkov ◽  
Amit Yadav ◽  
Vera L. Zerova ◽  
Modestas Zulonas ◽  
Andrey F. Tsatsulnikov ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Colour Temperature ◽  
Gan Led

Internal Quantum Efficiency of InGaN/GaN Led Structures Grown on a Patterned Sapphire Substrate

2014 ◽  
Vol 57 (5) ◽  
pp. 657-661 ◽  
Author(s):  
I. A. Prudaev ◽  
I. S. Romanov ◽  
Vad. A. Novikov ◽  
А. А. Marmalyuk ◽  
V. A. Kureshov ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Sapphire Substrate ◽  
Internal Quantum Efficiency ◽  
Patterned Sapphire Substrate ◽  
Gan Led

Emission rate and internal quantum efficiency enhancement in different geometrical shapes of GaN LED

2017 ◽  
Author(s):  
S. Rashid ◽  
M. H. A. Wahid ◽  
N. A. M. Ahmad Hambali ◽  
N. S. A. Abdul Halim ◽  
M. M. Ramli ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Emission Rate ◽  
Internal Quantum Efficiency ◽  
Efficiency Enhancement ◽  
Gan Led ◽  
Geometrical Shapes

Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%

2011 ◽  
Vol 315 (1) ◽  
pp. 263-266 ◽  
Author(s):  
JaeWon Lee ◽  
Youngjo Tak ◽  
Jun-Youn Kim ◽  
Hyun-Gi Hong ◽  
Suhee Chae ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
High Quality ◽  
Si Substrates ◽  
Gan Led

scholarly journals Perspectives on UVC LED: Its Progress and Application

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 196
Author(s):  
Tsung-Chi Hsu ◽  
Yu-Tsai Teng ◽  
Yen-Wei Yeh ◽  
Xiaotong Fan ◽  
Kuo-Hsiung Chu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Flip Chip ◽  
Layer Structure ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Reverse Current ◽  
Light Extraction ◽  
Epitaxial Layers ◽  
High Electron ◽  
Recombination Rates

High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light-emitting diode (LED) epitaxial layer structure exhibits electron leakage; therefore, many research groups have proposed the design of blocking layers and carrier transportation to generate high electron–hole recombination rates. This also aids in increasing the internal quantum efficiency. The cap layer, p-GaN, exhibits high absorption in deep UV radiation; thus, a small thickness is usually chosen. Flip chip design is more popular for such devices in the UV band, and the main factors for consideration are light extraction and heat transportation. However, the choice of encapsulation materials is important, because unsuitable encapsulation materials will be degraded by ultraviolet light irradiation. A suitable package design can account for light extraction and heat transportation. Finally, an atomic layer deposition Al2O3 film has been proposed as a mesa passivation layer. It can provide a low reverse current leakage. Moreover, it can help increase the quantum efficiency, enhance the moisture resistance, and improve reliability. UVC LED applications can be used in sterilization, water purification, air purification, and medical and military fields.

The novel Sr3LiSbO6:Mn4+, Ca2+ far-red-emitting phosphors with over 95% internal quantum efficiency for indoor plant growth LEDs

2021 ◽  
Vol 237 ◽  
pp. 118165
Author(s):  
Linyan Fu ◽  
Yunlong Yang ◽  
Yi Zhang ◽  
Xuefei Ren ◽  
Yingjie Zhu ◽  
...  
Keyword(s):  
Plant Growth ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
The Novel

Perovskite Light‐Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

2021 ◽  
Vol 33 (14) ◽  
pp. 2006302
Author(s):  
Yarong He ◽  
Jiaxu Yan ◽  
Lei Xu ◽  
Bangmin Zhang ◽  
Qian Cheng ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Low Temperatures ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting
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