scholarly journals Low-Cost ZnO:YAG-Based Metal-Insulator-Semiconductor White Light-Emitting Diodes with Various Insulators

2014 ◽  
Vol 2014 ◽  
pp. 1-4
Author(s):  
Lung-Chien Chen ◽  
Chih-Hung Hsu ◽  
Xiuyu Zhang ◽  
Jia-Ren Wu
Keyword(s):  
Indium Tin Oxide ◽  
Low Cost ◽  
Ultrasonic Spray Pyrolysis ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Ultrasonic Spray ◽  
Ito Glass ◽  
White Light Emitting Diodes

ZnO:YAG-based metal-insulator-semiconductor (MIS) diodes with various insulators were synthesized on an indium tin oxide (ITO) glass by ultrasonic spray pyrolysis. SiO2and MnZnO (MZO) were separately used as insulators. X-ray diffraction revealed the crystalline structure of the ZnO:YAG film. The photoluminescence (PL) properties of the ZnO:YAG film were studied and the color of photoluminescence was found to be almost white. The electrical properties of the diodes with different insulators and thicknesses were compared. The diode with the SiO2insulator had a lower threshold voltage, smaller leakage current, and a higher series resistance than that with the MZO insulator layer.

P-127: A ZnO Based Heterostructured n-i-n Light-Emitting Diode by Low-Cost Ultrasonic Spray Pyrolysis

2008 ◽  
Vol 39 (1) ◽  
pp. 1670
Author(s):  
Xiao Wei Sun ◽  
Junliang Zhao ◽  
Swee Tiam Tan ◽  
G. Q. Lo ◽  
D. L. Kwong
Keyword(s):  
Spray Pyrolysis ◽  
Light Emitting Diode ◽  
Low Cost ◽  
Ultrasonic Spray Pyrolysis ◽  
Light Emitting ◽  
Ultrasonic Spray

Fabrication of Micro-OLEDs by Room-temperature Curing Nanocontact-print Lithography Using DLC Molds

2012 ◽  
Vol 1511 ◽  
Author(s):  
Ippei Ishikawa ◽  
Keisuke Sakurai ◽  
Shuji Kiyohara ◽  
Taisuke Okuno ◽  
Hideto Tanoue ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Nanoimprint Lithography ◽  
Room Temperature ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Insulating Layer ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Ito Glass

ABSTRACTThe microfabrication technologiesfor organic light-emitting devices (OLEDs) are essential to the fabrication of the next generation of light-emitting devices. The micro-OLEDs fabricated by room-temperature curing nanoimprint lithography (RTC-NIL) using diamond molds have been investigated. However, light emissions from 10 μm-square-dot OLEDs fabricated by the RTC-NIL method have not been uniform. Therefore, we proposed the fabrication of micro-OLEDs by room-temperature curing nanocontact-print lithography (RTC-NCL) using the diamond-like carbon (DLC) mold. The DLC molds used in RTC-NCL were fabricated by an electron cyclotron resonance (ECR) oxygen ion shower with polysiloxane oxide mask in electron beam (EB) lithography technology. The mold patterns are square and rectangle dots which has 10 µm-width, 10 µm-width and50 µm-length, respectively. The height of the patterns is 500 nm. The DLC molds were used to form the insulating layer of polysiloxane in RTC-NCL. We carried out the RTC-NCL process using the DLC mold under the following optimum conditions: 0.1 MPa-pressure for coating DLC mold with polysiloxane film, 2.1 MPa-pressure for transferring polysiloxane from DLC mold pattern to indium tin oxide (ITO) glass substrate. We deposited N, N'-Diphenyl -N, N'-di (m-tolyl)benzidine (TPD) [40 nm-thickness] as hole transport layer / Tris(8-quinolinolato)aluminum (Alq3) [40 nm-thickness] as electron transport layer / Al [200 nm-thickness] as cathode on ITO glass substrateas anode in this order. We succeeded in formation of the insulating layer with square and rectangle dots which has 10 µm-width,10 µm-width and 50 µm-length, and operation of micro-OLEDs by RTC-NIL using DLC molds.

Synthesis and Characterization of CaMgSi2O6 Activated by Eu2+

2016 ◽  
Vol 881 ◽  
pp. 30-34
Author(s):  
Agatha Matos Misso ◽  
Hermi F. Brito ◽  
Lucas C.V. Rodrigues ◽  
Vinicius R. Morais ◽  
Chieko Yamagata
Keyword(s):  
High Efficiency ◽  
Low Cost ◽  
Sol Gel ◽  
Solid State Reactions ◽  
Phase Identification ◽  
Molten Salt Method ◽  
Persistent Luminescence ◽  
Light Emitting ◽  
Fluorescent Lamps ◽  
White Light Emitting Diodes

Rare earth silicate based MnMgSi2O5+n (M = Ca, Sr or Ba and n=1-2) phosphors, have attracted interest of researchers due to their high efficiency as a host, excellent thermal and chemical stability and high brightness adding to their low cost. These phosphors showed great potential in various applications such as fluorescent lamps, white light emitting diodes, and display components. High temperature solid-state reactions are usually employed to synthesize those compounds. This paper proposes an alternative method of obtaining nanophosphor host based on Eu-doped CaMgSi2O6 (CMS:Eu), persistent luminescence phosphor. Sol gel technique combined to a modified molten salt method was used. The resulted powder was calcined for 3h under an atmosphere of 5% H2 and 95% Ar2. Phase identification by XRD and the measurements of photoluminescence (PL) and photoluminescence excitation (PLE) were performed. Single phased CMS:Eu with persistent luminescence characteristics was prepared.

scholarly journals Enhanced Optical Output of Near-Ultraviolet Light-Emitting Diodes by a Monolayer of Nanospheres

2020 ◽  
Vol 2020 ◽  
pp. 1-7
Author(s):  
Wei Wan ◽  
Zhanxu Chen ◽  
Yongzhu Chen ◽  
Gengyan Chen
Keyword(s):  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Low Cost ◽  
Incident Light ◽  
Light Extraction Efficiency ◽  
Light Emitting ◽  
Hexagonal Close Packed ◽  
Exit Surface ◽  
Near Ultraviolet ◽  
Optical Output

The optical output of near-ultraviolet (NUV) light-emitting diodes (LEDs) was improved by including a monolayer of hexagonal close-packed polystyrene (PS) nanospheres. PS nanospheres with different sizes were deposited on the indium tin oxide layer of the NUV LEDs. The electroluminescence results showed that the light extraction efficiency of the NUV LEDs was increased by the inclusion of PS nanospheres, and the maximum optical output enhancement was obtained when the size of the nanospheres was close to the light wavelength. The largest enhancement of the optical output of 1.27-fold was obtained at an injection current of 100 mA. The enhanced optical output was attributed to part of the incident light beyond the critical angle being extracted when the exit surface of the NUV LEDs had a PS nanosphere monolayer. This method may serve as a low-cost and effective approach to raise the efficiency of NUV LEDs.

Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO2/SiN

2020 ◽  
Vol 20 (8) ◽  
pp. 4678-4683
Author(s):  
Jun Hyeok Jung ◽  
Min Su Cho ◽  
Won Douk Jang ◽  
Sang Ho Lee ◽  
Jaewon Jang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Gate Insulator ◽  
High Electron ◽  
Insulator Layer ◽  
Metal Insulator ◽  
High Electron Mobility ◽  
Metal Insulator Semiconductor ◽  
Dual Gate ◽  
Recessed Gate

In this work, we present a normally-off recessed-gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) using a TiO2/SiN dual gate-insulator. We analyzed the electrical characteristics of the proposed device and found that the dual gate-insulator device achieves higher on-state currents than the device using a SiN gate-insulator because the high-k insulator layer of the dual gate-insulator improves the gate-controllability. The device using a TiO2/SiN gate-insulator shows better gate leakage current characteristics than the device with only TiO2 gate-insulator because of the high quality SiN gate-insulator. Therefore, the device using a dual gate-insulator can overcome disadvantages of a device using only TiO2 gate-insulator. To better predict the power consumption and the switching speed, we simulated the specific on-resistance (Ron, sp) according to the gate-to-drain distance (LGD) using the two-dimensional ATLAS simulator. The proposed device exhibits a threshold voltage of 2.3 V, a maximum drain current of 556 mA/mm, a low Ron, sp of 1.45 mΩ·cm2, and a breakdown voltage of 631 V at an off-state current of 1 μA/mm with VGS = 0 V. We have confirmed that a normally-off recessed-gate AlGaN/GaN MIS-HEMT using a TiO2/SiN dual gate-insulator is a promising candidate for power electronic applications.

About 335 nm Ultraviolet Emissions Obtained from Simple Metal–Insulator–Semiconductor Light‐Emitting Tunnel Diodes

2020 ◽  
pp. 2000524
Author(s):  
Chen-Sheng Lin ◽  
Duncan W. E. Allsopp ◽  
Kate Cavanagh ◽  
Hei Chit Leo Tsui ◽  
Ling-Shan Yu ◽  
...  
Keyword(s):  
Tunnel Diodes ◽  
Simple Metal ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Ultraviolet Emissions
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