scholarly journals The search for the most conductive metal for narrow interconnect lines

2020 ◽  
Vol 127 (5) ◽  
pp. 050901 ◽  
Author(s):  
Daniel Gall
Keyword(s):  
Interconnect Lines

Analytical electron microscopy of grain boundaries in Al-Cu metallizations

1992 ◽  
Vol 50 (2) ◽  
pp. 1684-1685
Author(s):  
J. R. Michael ◽  
A. D. Romig ◽  
D. R. Frear
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Failure Mode ◽  
Current Density ◽  
Thermal History ◽  
Analytical Electron Microscopy ◽  
Cu Metallization ◽  
Analytical Electron ◽  
Interconnect Lines

Al with additions of Cu is commonly used as the conductor metallizations for integrated circuits, the Cu being added since it improves resistance to electromigration failure. As linewidths decrease to submicrometer dimensions, the current density carried by the interconnect increases dramatically and the probability of electromigration failure increases. To increase the robustness of the interconnect lines to this failure mode, an understanding of the mechanism by which Cu improves resistance to electromigration is needed. A number of theories have been proposed to account for role of Cu on electromigration behavior and many of the theories are dependent of the elemental Cu distribution in the interconnect line. However, there is an incomplete understanding of the distribution of Cu within the Al interconnect as a function of thermal history. In order to understand the role of Cu in reducing electromigration failures better, it is important to characterize the Cu distribution within the microstructure of the Al-Cu metallization.

Micromechanics Measurements Applied to Integrated Circuit Microelectronics

1997 ◽  
Vol 473 ◽  
Author(s):  
David R. Clarke
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Fracture Resistance ◽  
Interface Fracture ◽  
New Techniques ◽  
Fracture Properties ◽  
Engineered Structures ◽  
Mechanical And Fracture Properties ◽  
Interconnect Lines ◽  
Metallic Interconnect

ABSTRACTAs in other engineered structures, fracture occasionally occurs in integrated microelectronic circuits. Fracture can take a number of forms including voiding of metallic interconnect lines, decohesion of interfaces, and stress-induced microcracking of thin films. The characteristic feature that distinguishes such fracture phenomena from similar behaviors in other engineered structures is the length scales involved, typically micron and sub-micron. This length scale necessitates new techniques for measuring mechanical and fracture properties. In this work, we describe non-contact optical techniques for probing strains and a microscopic “decohesion” test for measuring interface fracture resistance in integrated circuits.

Microstructural characterization of inlaid copper interconnect lines

2001 ◽  
Vol 30 (4) ◽  
pp. 320-330 ◽  
Author(s):  
Paul R. Besser ◽  
Ehrenfried Zschech ◽  
Werner Blum ◽  
Delrose Winter ◽  
Richard Ortega ◽  
...  
Keyword(s):  
Microstructural Characterization ◽  
Copper Interconnect ◽  
Interconnect Lines

scholarly journals Synchrotron X-Ray Microdiffraction Studies of Electromigration in Interconnect lines at the Advanced Light Source

2009 ◽  
Author(s):  
N. Tamura ◽  
K. Chen ◽  
M. Kunz ◽  
Paul S. Ho ◽  
Ehrenfried Zschech ◽  
...  
Keyword(s):  
Light Source ◽  
X Ray ◽  
Advanced Light Source ◽  
Interconnect Lines

scholarly journals S-Parameter Model of Three Parallel Interconnect Lines Generating Negative Group-Delay Effect

IEEE Access ◽  
2018 ◽  
Vol 6 ◽  
pp. 57152-57159 ◽  
Author(s):  
Fayu Wan ◽  
Ningdong Li ◽  
Blaise Ravelo ◽  
Qizheng Ji ◽  
Junxiang Ge
Keyword(s):  
Group Delay ◽  
Negative Group ◽  
Delay Effect ◽  
S Parameter ◽  
Interconnect Lines ◽  
Negative Group Delay
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