Photocarrier radiometry of ion-implanted and thermally annealed silicon wafers with multiple-wavelength excitations

2012 ◽  
Vol 111 (9) ◽  
pp. 093729 ◽  
Author(s):  
Qiuping Huang ◽  
Bincheng Li
Keyword(s):  
Silicon Wafers ◽  
Photocarrier Radiometry ◽  
Multiple Wavelength ◽  
Ion Implanted

Three-layer photocarrier radiometry model of ion-implanted silicon wafers

2004 ◽  
Vol 95 (12) ◽  
pp. 7832-7840 ◽  
Author(s):  
Bincheng Li ◽  
Derrick Shaughnessy ◽  
Andreas Mandelis ◽  
Jerias Batista ◽  
Jose Garcia
Keyword(s):  
Silicon Wafers ◽  
Photocarrier Radiometry ◽  
Ion Implanted

Electronic transport characterization of B+ ion-implanted silicon wafers with nonlinear photocarrier radiometry

2020 ◽  
Vol 127 (3) ◽  
pp. 035701 ◽  
Author(s):  
Xiaoke Lei ◽  
Bincheng Li ◽  
Qiming Sun ◽  
Jing Wang ◽  
Chunming Gao
Keyword(s):  
Electronic Transport ◽  
Silicon Wafers ◽  
Photocarrier Radiometry ◽  
Ion Implanted

scholarly journals Nonlinear two-layer model for photocarrier radiometry of ion-implanted silicon wafers

AIP Advances ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 035125 ◽  
Author(s):  
Xiaoke Lei ◽  
Bincheng Li ◽  
Qiming Sun ◽  
Jing Wang ◽  
Chunming Gao
Keyword(s):  
Silicon Wafers ◽  
Photocarrier Radiometry ◽  
Layer Model ◽  
Two Layer Model ◽  
Ion Implanted
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