Enhanced terahertz absorption of quantum wells sandwiched between heavily doped contacts based on micro-cavity resonance

2020 ◽  
Vol 127 (5) ◽  
pp. 053104 ◽  
Author(s):  
Heming Yang ◽  
Yuanliao Zheng ◽  
Ning Li ◽  
Jiqing Wang ◽  
Pingping Chen
Keyword(s):  
Quantum Wells ◽  
Cavity Resonance ◽  
Terahertz Absorption ◽  
Heavily Doped ◽  
Micro Cavity

Fermi-edge singularity in heavily doped GaAs multiple quantum wells

1989 ◽  
Vol 40 (17) ◽  
pp. 12017-12019 ◽  
Author(s):  
H. Kalt ◽  
K. Leo ◽  
R. Cingolani ◽  
K. Ploog
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Edge Singularity ◽  
Fermi Edge ◽  
Fermi Edge Singularity ◽  
Heavily Doped

Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

2014 ◽  
Vol 105 (13) ◽  
pp. 131106 ◽  
Author(s):  
M. Beeler ◽  
C. Bougerol ◽  
E. Bellet-Amalric ◽  
E. Monroy
Keyword(s):  
Quantum Wells ◽  
Terahertz Absorption

Dispersion Relations of Heavily Doped Quantum Wells

2016 ◽  
Vol 5 (4) ◽  
pp. 427-472 ◽  
Author(s):  
K. P. Ghatak ◽  
K. Sarkar ◽  
N. Debbarma ◽  
L. Suraj Singh
Keyword(s):  
Quantum Wells ◽  
Dispersion Relations ◽  
Heavily Doped

scholarly journals Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

2011 ◽  
Vol 679-680 ◽  
pp. 314-317 ◽  
Author(s):  
Teddy Robert ◽  
Maya Marinova ◽  
Sandrine Juillaguet ◽  
Anne Henry ◽  
Efstathios K. Polychroniadis ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Effective Mass ◽  
Stacking Faults ◽  
Type Ii ◽  
Mass Approximation ◽  
Natural Type ◽  
Heavily Doped ◽  
Excitonic Recombination ◽  
Different Parts

Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the excitonic recombination is investigated using the standard effective mass approximation. The results are discussed in terms of built-in electric field and inter-well coupling effects.

Terahertz absorption by resonant plasmon excitations in grating-gated quantum wells

2009 ◽  
Author(s):  
T. A. Barrick ◽  
M. C. Wanke ◽  
K. Fortier ◽  
A. D. Grine ◽  
J. L. Reno ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Terahertz Absorption

Shallow and Deep Centers in Heavily Doped Silicon Quantum Wells

1995 ◽  
Vol 196-201 ◽  
pp. 467-472 ◽  
Author(s):  
W. Gehlhoff ◽  
Nikolai T. Bagraev ◽  
L.E. Klyachkin
Keyword(s):  
Quantum Wells ◽  
Deep Centers ◽  
Doped Silicon ◽  
Heavily Doped

Electron mobility in Gaussian heavily doped ZnO surface quantum wells

2008 ◽  
Vol 77 (12) ◽  
Author(s):  
Doan Nhat Quang ◽  
Le Tuan ◽  
Nguyen Thanh Tien
Keyword(s):  
Quantum Wells ◽  
Electron Mobility ◽  
Heavily Doped ◽  
Doped Zno

scholarly journals Terahertz absorption-saturation and emission from electron-doped germanium quantum wells

2020 ◽  
Vol 28 (5) ◽  
pp. 7245 ◽  
Author(s):  
Chiara Ciano ◽  
Michele Virgilio ◽  
Luigi Bagolini ◽  
Leonetta Baldassarre ◽  
Alexej Pashkin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Absorption Saturation ◽  
Terahertz Absorption
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