Dispersion Relations of Heavily Doped Quantum Wells

2016 ◽  
Vol 5 (4) ◽  
pp. 427-472 ◽  
Author(s):  
K. P. Ghatak ◽  
K. Sarkar ◽  
N. Debbarma ◽  
L. Suraj Singh
Keyword(s):  
Quantum Wells ◽  
Dispersion Relations ◽  
Heavily Doped

Fermi-edge singularity in heavily doped GaAs multiple quantum wells

1989 ◽  
Vol 40 (17) ◽  
pp. 12017-12019 ◽  
Author(s):  
H. Kalt ◽  
K. Leo ◽  
R. Cingolani ◽  
K. Ploog
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Edge Singularity ◽  
Fermi Edge ◽  
Fermi Edge Singularity ◽  
Heavily Doped

ZnSe-ZnCdSe single quantum wells: dispersion relations and absorption processes

1997 ◽  
Vol 43 (1-3) ◽  
pp. 133-136
Author(s):  
P. Bigenwald ◽  
B. Gil ◽  
L. Konczewicz ◽  
P. Testud
Keyword(s):  
Quantum Wells ◽  
Dispersion Relations ◽  
Single Quantum

scholarly journals Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

2011 ◽  
Vol 679-680 ◽  
pp. 314-317 ◽  
Author(s):  
Teddy Robert ◽  
Maya Marinova ◽  
Sandrine Juillaguet ◽  
Anne Henry ◽  
Efstathios K. Polychroniadis ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Effective Mass ◽  
Stacking Faults ◽  
Type Ii ◽  
Mass Approximation ◽  
Natural Type ◽  
Heavily Doped ◽  
Excitonic Recombination ◽  
Different Parts

Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the excitonic recombination is investigated using the standard effective mass approximation. The results are discussed in terms of built-in electric field and inter-well coupling effects.

Shallow and Deep Centers in Heavily Doped Silicon Quantum Wells

1995 ◽  
Vol 196-201 ◽  
pp. 467-472 ◽  
Author(s):  
W. Gehlhoff ◽  
Nikolai T. Bagraev ◽  
L.E. Klyachkin
Keyword(s):  
Quantum Wells ◽  
Deep Centers ◽  
Doped Silicon ◽  
Heavily Doped

Electron mobility in Gaussian heavily doped ZnO surface quantum wells

2008 ◽  
Vol 77 (12) ◽  
Author(s):  
Doan Nhat Quang ◽  
Le Tuan ◽  
Nguyen Thanh Tien
Keyword(s):  
Quantum Wells ◽  
Electron Mobility ◽  
Heavily Doped ◽  
Doped Zno

scholarly journals Quantum Confinement of Chiral Charge Carriers in Ring Conductors

2021 ◽  
Author(s):  
◽  
Lei Yang
Keyword(s):  
Angular Momentum ◽  
Quantum Wells ◽  
Quantum Confinement ◽  
Berry Phase ◽  
Correction Term ◽  
Single Layer ◽  
Energy Shift ◽  
Dispersion Relations ◽  
Single Layer Graphene ◽  
Quantum Ring

<p>We theoretically study the quantum confinement effects and transport prop- erties of quantum ring (QR) systems. In particular, we investigate QRs made out of the following materials: single-layer graphene (SLG), single- layer transition-metal dichalcogenides (TMDs) and narrow-gap semiconduc- tor quantum wells (SQWs).  Via perturbation theory and assuming that the ring aspect ratio is small, the general subband dispersion relations of these hard-wall ring confined systems are determined. These dispersion results agree with and extend on previous works. We discover the necessity of including both a size-quantisation energy and an angular momentum dependent energy shift to the dispersion equation due to their sizeable impact on the conductance of the system.  The topological properties of these QR systems is also investigated. We find that QR confinement of materials may destroy the topologically non-trivial properties of states. The topological phase can be recovered when the band structure is inverted and the confined material parameters satisfy certain critical widths and gap limits.  An analytical expression of the conductance for QRs (with symmetrically- arranged leads), in the presence of the perpendicular magnetic field piercing the centre of the ring, is derived. We study the geometric (i.e. Berry) and dynamic phases of the system that arise from the interference of partial waves in the ring branches. We discover that the Berry phase is modified by a correction term that arises purely from the quantum confinement of the materials. This has generally not been taken into account by previous studies. The explicit analytical expressions of the phase correction term are derived and shown to be proportional to the angular momentum dependent energy shift, present in the dispersion relations, for lead injection energies close to the subband energy.  Overall, this study finds that the material-dependent phase plays a significant role in both the dispersion relation and the conductance of QRs and thus provides a useful insight for future experimental efforts with regards to transport in QR systems.</p>

Dependence of valence‐subband dispersion relations on heterointerface boundary conditions in InxGa1−xAsyP1−y/InP narrow quantum wells

1994 ◽  
Vol 76 (4) ◽  
pp. 2347-2356 ◽  
Author(s):  
Takayuki Yamanaka ◽  
Hidehiko Kamada ◽  
Yuzo Yoshikuni ◽  
Wayne W. Lui ◽  
Shunji Seki ◽  
...  
Keyword(s):  
Boundary Conditions ◽  
Quantum Wells ◽  
Dispersion Relations
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