Electron mobility in Gaussian heavily doped ZnO surface quantum wells

2008 ◽  
Vol 77 (12) ◽  
Author(s):  
Doan Nhat Quang ◽  
Le Tuan ◽  
Nguyen Thanh Tien
Keyword(s):  
Quantum Wells ◽  
Electron Mobility ◽  
Heavily Doped ◽  
Doped Zno

Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells

2002 ◽  
Vol 80 (9) ◽  
pp. 1583-1585 ◽  
Author(s):  
E. P. De Poortere ◽  
Y. P. Shkolnikov ◽  
E. Tutuc ◽  
S. J. Papadakis ◽  
M. Shayegan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electron Mobility ◽  
Quantum Hall ◽  
High Order ◽  
Fractional Quantum ◽  
Fractional Quantum Hall ◽  
Quantum Hall States ◽  
Hall States

INFLUENCE OF NONLINEAR ELECTRON MOBILITY ON RESPONSE TIME IN PHOTOREFRACTIVE SEMICONDUCTOR QUANTUM WELLS

2012 ◽  
Vol 21 (04) ◽  
pp. 1250050 ◽  
Author(s):  
MAREK WICHTOWSKI ◽  
ANDRZEJ ZIOLKOWSKI ◽  
EWA WEINERT-RACZKA ◽  
BLAZEJ JABLONSKI ◽  
WOJCIECH KARWECKI
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Hot Electrons ◽  
Nonlinear Transport ◽  
Field Range ◽  
Fringe Contrast ◽  
Recording Time ◽  
Semiconductor Quantum Wells ◽  
Charge Field

Nonlinear transport of hot electrons in semi-insulating GaAs / AlGaAs quantum wells significantly affects their photorefractive properties. In case of two waves mixing, this influence consists, among others, in an increased shift of photorefractive grating relative to light intensity distribution. The influence of nonlinear transport on grating recording time is less examined experimentally and theoretically. This study compares numerical and analytical solutions describing grating dynamics in approximation of small fringe contrast. The influence of nonlinear electron mobility on space-charge field was examined depending on external electric field intensity and on the grating constant. It was found that in the electric field range below 20 kV/cm, the nonlinear transport of electrons does not shorten the grating generation time.

scholarly journals Influence of Fe2O3 Dopant on Dielectric, Optical Conductivity and Nonlinear Optical Properties of Doped ZnO-Polystyrene Composites Films

2021 ◽  
Vol 12 (1) ◽  
pp. 170-179
Keyword(s):  
Optical Properties ◽  
Optical Conductivity ◽  
Electron Mobility ◽  
Relative Permittivity ◽  
Nonlinear Optical ◽  
The Other ◽  
Filler Concentration ◽  
Casting Method ◽  
Polystyrene Nanoparticles ◽  
Doped Zno

ZnO-Polystyrene nanoparticles doped with Fe2O3 were prepared by the casting method. Both Ed and Eo were calculated. εL and N/m* increase with filler concentrations for these samples. On the other hand, both M-1, M-3, decreased with increasing filler. The filler concentrations affected on determined values of both of ε\ and ε\\. These values increase with filler, and also the same result was achieved for both σ1 and σ2, which also increases with filler. The relation between VELF and SELF was determined. χ(1) increases with increasing filler ratio. n2, χ(3), βc, were determined theoretically. The electrical susceptibility χe and relative permittivity εr increase with the increase of filler concentration as a result of increasing electron mobility.

Fermi-edge singularity in heavily doped GaAs multiple quantum wells

1989 ◽  
Vol 40 (17) ◽  
pp. 12017-12019 ◽  
Author(s):  
H. Kalt ◽  
K. Leo ◽  
R. Cingolani ◽  
K. Ploog
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Edge Singularity ◽  
Fermi Edge ◽  
Fermi Edge Singularity ◽  
Heavily Doped

Bandstructure Near Misfit Dislocations in Si Quantum Wells

1998 ◽  
Vol 4 (S2) ◽  
pp. 794-795
Author(s):  
P.E. Batson
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Electron Mobility ◽  
Axial Strain ◽  
Strain Relaxation ◽  
Local Potential ◽  
Misfit Dislocations ◽  
High Electron ◽  
Strained Si ◽  
Growth Interface

High electron mobility structures have been built for several years now using strained silicon layers grown on SixGe(1-x) with x in the 25-40% range. In these structures, a thin layer of silicon is grown between layers of unstrained GeSi alloy. Matching of the two lattices in the plane of growth produces a bi-axial strain in the silicon, splitting the conduction band and providing light electron levels for enhanced mobility. If the silicon channel becomes too thick, strain relaxation can occur by injection of misfit dislocations at the growth interface between the silicon and GeSi alloy. The strain field of these dislocations then gives rise to a local potential variation that limits electron mobility in the strained Si channel. This study seeks to verify this mechanism by measuring the absolute conduction band shifts which track the local potential near the misfit dislocations.

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