Analysis of current–voltage characteristics for Langmuir probes immersed in an ion beam

2020 ◽  
Vol 91 (2) ◽  
pp. 023504
Author(s):  
E. Sartori ◽  
V. Candeloro ◽  
G. Serianni
Keyword(s):  
Ion Beam ◽  
Langmuir Probes ◽  
Current Voltage ◽  
Current Voltage Characteristics

Current/voltage characteristics of ion beam synthesised CoSi2/Si Schottky barrier diodes

1992 ◽  
Vol 28 (3) ◽  
pp. 296 ◽  
Author(s):  
R.S. Spraggs ◽  
G. Pananakakis ◽  
D. Bauza ◽  
K.J. Reeson ◽  
B.J. Sealy
Keyword(s):  
Schottky Barrier ◽  
Ion Beam ◽  
Schottky Barrier Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics

Functional Characteristics of QD-InAs/GaAs Heterostructures with Potential Barriers AlGaAs and GaAs

2018 ◽  
Vol 284 ◽  
pp. 182-187
Author(s):  
E.E. Blokhin ◽  
D.A. Arustamyan ◽  
L.M. Goncharova
Keyword(s):  
Quantum Dots ◽  
High Speed ◽  
Ion Beam ◽  
Inas Quantum Dots ◽  
Potential Barriers ◽  
Near Ir ◽  
Current Voltage ◽  
Ir Photodetectors ◽  
Current Voltage Characteristics ◽  
Beam Deposition

In this paper we present the results of investigation of heterostructures with an array of InAs quantum dots grown on GaAs substrates with GaAs and AlGaAs front barriers for high-speed near-IR photodetectors. The thickness of the barrier layers did not exceed 30 nm. It is shown that the ion-beam deposition method makes it possible to grow quantum dots with lateral dimensions up to 30 nm and 15 nm height. The spectral dependences of the external quantum efficiency and dark current-voltage characteristics are investigated.

Influence of Domain Structure on Magnetoresistance in Perovskite Manganite Grain Boundary Junctions

2001 ◽  
Vol 674 ◽  
Author(s):  
Robert Gunnarsson ◽  
Anatoli Kadigrobov ◽  
Zdravko Ivanov
Keyword(s):  
Grain Boundary ◽  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Domain Walls ◽  
Ion Beam ◽  
Perovskite Manganite ◽  
Current Voltage ◽  
Single Grain ◽  
Current Voltage Characteristics ◽  
The Impact

ABSTRACTWe have been able to deduce a temperature dependence of the built-in potential in La2/3Sr1/3MnO3 grain boundary junctions. This has been performed by trimming a single grain boundary down to 1μm width with a focused ion-beam. We can thereby see the impact of single domain walls on the magnetoresistance and the current-voltage characteristics. We have also demonstrated the effect of averaging as we increased the number of junctions.

Maskless Formation of Tungsten Films by Ion Beam Assisted Deposition Technique

1989 ◽  
Vol 158 ◽  
Author(s):  
Zheng Xu ◽  
Toshihiko Kosugi ◽  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Deep Level ◽  
Ion Beam ◽  
Low Energy ◽  
Deposition Technique ◽  
Film Properties ◽  
Ion Beam Assisted Deposition ◽  
Current Voltage ◽  
Residual Damage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTW films were deposited on n-GaAs by ion beam assisted deposition technique using low energy H2+ and Ar+, and film properties and residual damage in the substrate were investigated by measuring X-ray photoemission, current-voltage characteristics and deep level transient spectroscopy. Films with a resistivity of 1O−5 ohm·cm were formed. It was observed that damage can be reduced using the low energy beams and that Schottky contacts with n-factor of almost 1 and barrier height of 0.88 eV were formed.

Vapor-Liquid-Solid Growth of Silicon-Based Nanowires for High Sensitive Sensor

2013 ◽  
Vol 534 ◽  
pp. 257-261 ◽  
Author(s):  
Hayato Sone ◽  
Yasuyuki Suda ◽  
Daiki Kubota ◽  
Sumio Hosaka
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Vapor Liquid Solid ◽  
Transmission Electron ◽  
Current Voltage ◽  
Vls Growth ◽  
Sensitive Sensor ◽  
Current Voltage Characteristics ◽  
Silicon Based ◽  
Vapor Liquid

Silicon-based nanowires (Si-NWs) were fabricated by vapor liquid solid (VLS) growth, and Si-NW device was prototyped using focused ion beam (FIB) processing. The needle shaped thin Si-NWs were formed at a substrate temperature between 1120 and 1313°C. The average and minimum diameters of the NWs were confirmed 60 nm and 44 nm, respectively. As the double-layered structure was observed in the NWs by transmission electron microscope images, it is possible that those are silicon-based NWs with Si core and SiO2shell structure. From current-voltage characteristics, the Si-NW device has a semiconducting property, and the estimated resistivity of the Si-NW is about 3.1 x 104Ωcm.

Current-Voltage Characteristic of C-RAM Nano-Cell-Element

2007 ◽  
Vol 121-123 ◽  
pp. 591-594
Author(s):  
Bo Liu ◽  
Zhi Tang Song ◽  
Song Lin Feng ◽  
Bomy Chen
Keyword(s):  
Focused Ion Beam ◽  
Bottom Electrode ◽  
Ion Beam ◽  
Random Access ◽  
Access Memory ◽  
Cell Element ◽  
Current Voltage ◽  
Beam Method ◽  
Current Voltage Characteristics ◽  
Contact Size

Nano-cell-elements of chalcogenide random access memory (C-RAM) based on Ge2Sb2Te5 films have been successively fabricated by using the focused ion beam method. The minimum contact size between the Ge2Sb2Te5 phase change film and bottom electrode film in the nano-cell-element is in diameter of 90nm. The current-voltage characteristics of the C-RAM cell element are studied using the home-made current-voltage tester in our laboratory. The minimum SET current of about 0.3mA is obtained.

Fabrication Using Focused Ion Beam Processing of Devices Employing Silicon-Based Nanowires Synthesized by Vapor-Liquid-Solid Growth

2013 ◽  
Vol 423-426 ◽  
pp. 125-129
Author(s):  
Hayato Sone ◽  
Yousuke Nakamura ◽  
Yasuyuki Suda ◽  
Sumio Hosaka
Keyword(s):  
Substrate Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Vapor Liquid Solid ◽  
Current Voltage ◽  
Doped Silicon ◽  
Current Voltage Characteristics ◽  
Silicon Based ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Undoped and B-doped silicon-based nanowires (SiNWs) were synthesized by vapor-liquid-solid growth, and SiNW devices using Au electrodes were prototyped using focused ion beam (FIB) processing. Needle-shaped thin SiNWs were formed at a substrate temperature between 1170 and 1313 °C. The average and minimum diameters of the B-doped SiNWs were 72 nm and 52 nm, respectively. According to the current-voltage characteristics, SiNW devices have ohmic properties, and the estimated resistivity of the undoped and B-doped SiNWs are about 3.8 × 103Ωcm and 1.7 × 103Ωcm, respectively.

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