scholarly journals Effects of damages induced by indium-tin-oxide reactive plasma deposition on minority carrier lifetime in silicon crystal

AIP Advances ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 105219 ◽  
Author(s):  
Takefumi Kamioka ◽  
Yuki Isogai ◽  
Yutaka Hayashi ◽  
Yoshio Ohshita ◽  
Atsushi Ogura
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Plasma Deposition ◽  
Silicon Crystal ◽  
Minority Carrier Lifetime ◽  
Reactive Plasma

Effect of Annealing Temperature on the Properties of Silicon Crystal

2011 ◽  
Vol 415-417 ◽  
pp. 1323-1326 ◽  
Author(s):  
Qiu Yan Hao ◽  
Xin Jian Xie ◽  
Bing Zhang Wang ◽  
Cai Chi Liu
Keyword(s):  
Annealing Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Silicon Crystal ◽  
Minority Carrier Lifetime ◽  
Interstitial Oxygen ◽  
Oxygen Precipitation ◽  
Oxygen Donor ◽  
Infrared Spectrometer ◽  
Effect Of Oxygen

In order to investigate the performance of silicon single crystal depended on the annealing temperature, the minority carrier lifetime, the resistivity and oxygen concentration after different temperature annealing in Ar ambient were examined. And the effect of oxygen and related defects formed during annealed on the minority carrier lifetime were analyzed by microwave photoconductivity method, Fourier transform infrared spectrometer and four-probe measurement. The results indicate that after 450°C annealing for 30h, the resistivity and minority carrier lifetime of silicon increase significantly, while the concentration of interstitial oxygen decreases. After the annealing at 650°C, oxygen donor can be removed and the resistivity and the minority carrier lifetime decrease. During the high-temperature (above 650°C) annealing, the oxygen precipitation can decrease the minority carrier lifetime silicon.

Intrinsic Point Defects and Their Control in Silicon Crystal Growth and Wafer Processing

MRS Bulletin ◽  
2000 ◽  
Vol 25 (6) ◽  
pp. 28-32 ◽  
Author(s):  
R. Falster ◽  
V. V. Voronkov
Keyword(s):  
Integrated Circuit ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Silicon Crystal ◽  
Stacking Faults ◽  
Minority Carrier Lifetime ◽  
Defect Engineering ◽  
Ic Manufacturing ◽  
Microelectronics Industry ◽  
Wafer Processing

Silicon produced for the microelectronics industry is far and away the purest and most perfect crystalline material manufactured today. It is fabricated routinely and in very large volumes. Many of the advances in integrated-circuit (IC) manufacturing achieved in recent years would not have been possible without parallel advances in silicon-crystal quality and defect engineering. Transition-metal contamination is a case in point. Essentially all practical problems (minority carrier lifetime, metal precipitation, stacking faults, etc.) associated with metal contaminants have largely been solved through advances in crystal purity.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

scholarly journals Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Marked Enhancement
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